High-speed light sensing apparatus
An apparatus including a semiconductor substrate; an absorption layer coupled to the semiconductor substrate, the absorption layer including a photodiode region configured to absorb photons and to generate photo-carriers from the absorbed photons; one or more first switches controlled by a first control signal, the one or more first switches configured to collect at least a portion of the photo-carriers based on the first control signal; and one or more second switches controlled by a second control signal, the one or more second switches configured to collect at least a portion of the photo-carriers based on the second control signal, where the second control signal is different from the first control signal.
1. An optical sensor comprising:
a semiconductor substrate comprising silicon of a first conductivity type;
one or more pixels each comprising an absorption layer supported by the semiconductor substrate and configured to absorb photons and to generate photo-carriers in response to the absorbed photons, wherein the absorption layer comprises germanium and includes a first doped region of the first conductivity type, and wherein the absorption layer is doped with the first conductivity type;
a second doped region comprising silicon of a second conductivity type different from the first conductivity type, wherein the second doped region is formed along a surface of the semiconductor substrate; and
a well region comprising silicon of the second conductivity type, wherein the well region is formed along the surface of the semiconductor substrate and doped with the second conductivity type, wherein the well region doped with the second conductivity type is in direct contact with the absorption layer doped with the first conductivity type, and wherein the well region is arranged to guide a portion of the photo-carriers from the absorption layer to the second doped region.
2. The optical sensor of claim 1 , wherein a dopant level of the well region ranges from 10 15 cm −3 to 10 17 cm −3 .
3. The optical sensor of claim 1 , wherein the well region is arranged to reduce a potential energy barrier perceived by the photo-carriers flowing from the absorption layer to the semiconductor substrate.
4. The optical sensor of claim 1 , wherein the one or more pixels comprise multiple pixels, and the optical sensor further comprises an isolation region configured to isolate photo-carriers from moving between the multiple pixels.
5. The optical sensor of claim 4 , wherein the isolation region comprises an oxide or nitride layer, a p-doped region or an n-doped region.
6. The optical sensor of claim 1 , wherein a doping level of the semiconductor substrate ranges from 10 14 cm −3 to 10 16 cm −3 .
7. The optical sensor of claim 1 , wherein a doping level of the absorption layer ranges from 10 14 cm −3 to 10 16 cm −3 .
8. The optical sensor of claim 1 , wherein the absorption layer is partially or fully embedded in the semiconductor substrate.
9. The optical sensor of claim 1 , further comprising an optical component over a backside of the semiconductor substrate, the optical component being configured to guide an optical signal to the absorption layer.
10. The optical sensor of claim 1 , further comprising a third doped region of the first conductivity type arranged between the absorption layer and the second doped region.
11. An optical system, comprising:
a transmitter unit configured to emit light;
a receiver unit comprising an optical sensor comprising:
a semiconductor substrate comprising silicon of a first conductivity type;
one or more pixels each comprising an absorption layer supported by the semiconductor substrate and configured to absorb photons and to generate photo-carriers in response to the absorbed photons, wherein the absorption layer comprises germanium and includes a first doped region of the first conductivity type, and wherein the absorption layer is doped with the first conductivity type;
a second doped region comprising silicon of a second conductivity type different from the first conductivity type, wherein the second doped region is formed along a surface of the semiconductor substrate; and
a well region comprising silicon of the second conductivity type, wherein the well region is formed along the surface of the semiconductor substrate and doped with the second conductivity type, wherein the well region doped with the second conductivity type is in direct contact with the absorption layer doped with the first conductivity type, and wherein the well region is arranged to guide a portion of the photo-carriers from the absorption layer to the second doped region; and
a processing unit configured to process the photo-carriers generated by the receiver unit.
12. The optical system of claim 11 , wherein the transmitter unit comprises one or more light sources comprising one or more NIR LEDs or lasers.
13. The optical system of claim 11 , wherein transmitter unit is configured to emit light toward a target object, and the processing unit is configured to determine one or more characteristics of the target object.
14. The optical system of claim 13 , wherein the one or more characteristics of the target object comprise depth information of the target object or material compositions of the target object.
15. The optical system of claim 11 , wherein a dopant level of the well region ranges from 10 15 cm −3 to 10 17 cm −3 .
16. The optical system of claim 11 , wherein the one or more pixels comprises a plurality of pixels, and the optical sensor further comprises an isolation region configured to isolate photo-carriers from moving between the plurality of pixels.
17. The optical system of claim 11 , wherein the absorption layer is partially or fully embedded or recessed in the semiconductor substrate.
18. The optical system of claim 11 , further comprising an optical component over a backside of the semiconductor substrate, the optical component being configured to guide an optical signal to the absorption layer.
19. The optical system of claim 11 , further comprising a third doped region of the first conductivity type arranged between the absorption layer and the second doped region.
20. The optical system of claim 11 , wherein the well region is arranged to reduce a potential energy barrier perceived by the photo-carriers flowing from the absorption layer to the semiconductor substrate.