IP Library › Granted Patent US 11,637,142
Granted Patent B2
US 11,637,142 · App. 16/521,974 · Granted Apr 25, 2023

High-speed light sensing apparatus III

Inventors: Yun-Chung Na (Zhubei, TW); Che-Fu Liang (Zhubei, TW); Shu-Lu Chen (Zhubei, TW); Szu-Lin Cheng (Zhubei, TW); Han-Din Liu (Zhubei, TW); Chien-Lung Chen (Taoyuan, TW); Yuan-Fu Lyu (Taoyuan, TW); Chieh-Ting Lin (Zhubei, TW); Bo-Jiun Chen (Zhubei, TW); Hui-Wen Chen (Zhubei, TW); Shu-Wei Chu (Zhubei, TW); Chung-Chih Lin (Zhubei, TW); Kuan-Chen Chu (Zhubei, TW)
Assignee: Artilux, Inc.
H01L27/14643G01S7/4816G01S7/4863G01S7/4914G01S17/36H01L27/14609H01L27/14612H01L27/14629H01L27/14634H01L27/14681H01L29/161H01L31/1037H01L27/1463H01L27/14627H01L27/14636
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Quick Facts
Patent No.
US 11,637,142
App. No.
16/521,974
Granted
Apr 25, 2023
Kind
B2
Abstract

A circuit, including: a photodetector including a first readout terminal and a second readout terminal different than the first readout terminal; a first readout circuit coupled with the first readout terminal and configured to output a first readout voltage; a second readout circuit coupled with the second readout terminal and configured to output a second readout voltage; and a common-mode analog-to-digital converter (ADC) including: a first input terminal coupled with a first voltage source; a second input terminal coupled with a common-mode generator, the common-mode generator configured to receive the first readout voltage and the second readout voltage, and to generate a common-mode voltage between the first and second readout voltages; and a first output terminal configured to output a first output signal corresponding to a magnitude of a current generated by the photodetector.

Claims (53)

1. A circuit, comprising:

a photodetector comprising a first readout terminal and a second readout terminal different than the first readout terminal;

a first readout subcircuit comprising a first MOSFET transistor and a second MOSFET transistor, the first MOSFET transistor comprising a first gate terminal coupled with a first control voltage source, a first channel terminal, and a second channel terminal coupled with the first readout terminal of the photodetector, and the second MOSFET transistor comprising a second gate terminal coupled with a second control voltage source, a third channel terminal coupled with a supply voltage node, and a fourth channel terminal coupled with the first channel terminal; and

a second readout subcircuit comprising a third MOSFET transistor and a fourth MOSFET transistor, the third MOSFET transistor comprising a third gate terminal coupled with the first control voltage source, a fifth channel terminal, and a sixth channel terminal coupled with the second readout terminal of the photodetector, and the fourth MOSFET transistor comprising a fourth gate terminal coupled with the second control voltage source, a seventh channel terminal coupled with the supply voltage node, and an eighth channel terminal coupled with the fifth channel terminal.

2. The circuit of claim 1 , wherein:

the first readout terminal is a first n-doped region;

the second readout terminal is a second n-doped region;

the first MOSFET transistor is a first n-type MOSFET transistor; and

the third MOSFET transistor is a second n-type MOSFET transistor.

3. The circuit of claim 2 , wherein:

the first n-doped region is partially or fully surrounded by a first p-well; and

the second n-doped region is partially or fully surrounded by a second p-well.

4. The circuit of claim 1 , wherein:

the first readout terminal is a first p-doped region;

the second readout terminal is a second p-doped region;

the first MOSFET transistor is a first p-type MOSFET transistor; and

the third MOSFET transistor is a second p-type MOSFET transistor.

5. The circuit of claim 4 , wherein:

the first p-doped region is partially or fully surrounded by a first n-well; and

the second p-doped region is partially or fully surrounded by a second n-well.

6. The circuit of claim 1 , wherein:

the first MOSFET is configured to generate a first voltage difference between the first channel terminal and the second channel terminal; and

the third MOSFET is configured to generate a second voltage difference between the fifth channel terminal and the sixth channel terminal.

7. The circuit of claim 1 , wherein:

the second MOSFET and the fourth MOSFET are configured to generate a first preset voltage on the fourth channel terminal and a second preset voltage on the eighth channel terminal respectively.

8. The circuit of claim 1 , further comprising:

a first source follower, coupled to the first channel terminal, configured to generate a first readout voltage; and

a second source follower, coupled to the second channel terminal, configured to generate a second readout voltage.

9. The circuit of claim 8 , further comprising:

a common-mode analog-to-digital converter, coupled to the first source follower and the second source follower, configured to generate a first digital output signal according to the first readout voltage and the second readout voltage.

10. The circuit of claim 8 , further comprising:

a differential-mode analog-to-digital converter, coupled to the first source follower and the second source follower, configured to generate a second digital output signal according to the first readout voltage and the second readout voltage.

11. A circuit, comprising:

a photodetector comprising a first readout terminal and a second readout terminal different than the first readout terminal; and

a first readout subcircuit comprising a first MOSFET transistor and a second MOSFET transistor, the first MOSFET transistor comprising a first gate terminal coupled with a first control voltage source, a first channel terminal, and a second channel terminal coupled with the first readout terminal of the photodetector, and the second MOSFET transistor comprising a second gate terminal coupled with a second control voltage source, a third channel terminal coupled with a supply voltage node, and a fourth channel terminal coupled with the first channel terminal.

12. The circuit of claim 11 , wherein:

the first readout terminal is a first n-doped region; and

the first MOSFET transistor is a first n-type MOSFET transistor.

13. The circuit of claim 12 , wherein:

the first n-doped region is partially or fully surrounded by a first p-well.

14. The circuit of claim 11 , wherein:

the first readout terminal is a first p-doped region; and

the first MOSFET transistor is a first p-type MOSFET transistor.

15. The circuit of claim 14 , wherein:

the first p-doped region is partially or fully surrounded by a first n-well.

16. The circuit of claim 11 , wherein:

during operation of the circuit, the first control voltage source generates a first control voltage configured to create a first voltage difference between a supply voltage of the supply voltage node and a first voltage of the first readout terminal.

17. The circuit of claim 11 , wherein:

the first MOSFET is configured to generate a first voltage difference between the first channel terminal and the second channel terminal.

18. The circuit of claim 11 , wherein:

the second MOSFET is configured to generate a first preset voltage on the fourth channel terminal.

19. The circuit of claim 11 , further comprising:

a first source follower, coupled to the first channel terminal, configured to generate a first readout voltage.

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Aug 20, 2019
From: NA, YUN-CHUNG; LIANG, CHE-FU; CHEN, SHU-LU; CHENG, SZU-LIN; LIU, HAN-DIN; CHEN, CHIEN-LUNG; LYU, YUAN-FU; LIN, CHIEH-TING; CHEN, BO-JIUN; CHEN, HUI-WEN; CHU, SHU-WEI; LIN, CHUNG-CHIH; CHU, KUAN-CHEN
To: ARTILUX CORPORATION
Reel/Frame 050099/0095 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Aug 20, 2019
From: ARTILUX CORPORATION
To: ARTILUX, INC.
Reel/Frame 050099/0382 →
Continuity (23)
Continuation 15944658 · Apr 3, 2018
Continuation In Part 15908447 · Feb 28, 2018
Continuation In Part 15338660 · Oct 31, 2016
Provisional Application 62465139 · Feb 28, 2017
Provisional Application 62479322 · Mar 31, 2017
Provisional Application 62504531 · May 10, 2017
Provisional Application 62485003 · Apr 13, 2017
Provisional Application 62511977 · May 27, 2017
Provisional Application 62534179 · Jul 18, 2017
Provisional Application 62561266 · Sep 21, 2017
Provisional Application 62613054 · Jan 3, 2018
Provisional Application 62617317 · Jan 15, 2018
Provisional Application 62271386 · Dec 28, 2015
Provisional Application 62251691 · Nov 6, 2015
Provisional Application 62294436 · Feb 12, 2016
Provisional Application 62481131 · Apr 4, 2017
Provisional Application 62511977 · May 27, 2017
Provisional Application 62542329 · Aug 8, 2017
Provisional Application 62561256 · Sep 21, 2017
Provisional Application 62581720 · Nov 5, 2017
Provisional Application 62581777 · Nov 5, 2017
Provisional Application 62596914 · Dec 11, 2017
Related Publication 20190348463A1 · Nov 14, 2019
Cited By (6)
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