Photodetector structure

1. A photodetector structure, comprising:

a substrate including a semiconductor film;

a light absorption layer on the substrate, the light absorption layer being in contact with the semiconductor film and including germanium (Ge), the light absorption layer being an epitaxial layer crystal-grown from an upper surface of the semiconductor film;

a first coating layer on the substrate, the first coating layer wrapping at least a part of a side surface of the light absorption layer; and

an optical waveguide on the first coating layer, the optical waveguide being in contact with the light absorption layer and including silicon nitride (SiN),

wherein a lower surface of the optical waveguide is higher than a lower surface of the light absorption layer, and

wherein the optical waveguide extends on an upper surface of the first coating layer to contact the side surface of the light absorption layer and an upper surface of the light absorption layer.

2. The photodetector structure as claimed in claim 1 , wherein the light absorption layer and the first coating layer are in contact with an uppermost surface of the semiconductor film.

3. The photodetector structure as claimed in claim 1 , wherein the optical waveguide is in contact with at least a part of the side surface and at least a part of an upper surface of the light absorption layer.

4. The photodetector structure as claimed in claim 1 , wherein a lower part of the light absorption layer fills a trench in the substrate.

5. The photodetector structure as claimed in claim 1 , further comprising a second coating layer under the first coating layer, the second coating layer filling a trench in the substrate.

6. The photodetector structure as claimed in claim 1 , further comprising a second coating layer on the substrate, the second coating layer covering the light absorption layer, the first coating layer, and the optical waveguide.

7. The photodetector structure as claimed in claim 6 , wherein the second coating layer directly contacts at least the light absorption layer, the optical waveguide, and the substrate.

8. The photodetector structure as claimed in claim 7 , wherein the optical waveguide extends directly between the first and second coating layers.

9. The photodetector structure as claimed in claim 1 , wherein the substrate is an SOI (Silicon-On-Insulator).

10. The photodetector structure as claimed in claim 1 , wherein the first coating layer includes silicon oxide.

11. The photodetector structure as claimed in claim 1 , wherein the optical waveguide extends in a direction parallel to an upper surface of the substrate.

12. The photodetector structure as claimed in claim 1 , wherein the light absorption layer includes:

a first impurity region of a first conductivity type;

a second impurity region of a second conductivity type different from the first conductivity type; and

a germanium layer between the first impurity region and the second impurity region.

13. The photodetector structure as claimed in claim 1 , wherein a lower surface of the first coating layer and the lower surface of the light absorption layer are coplanar.

14. The photodetector structure as claimed in claim 1 , wherein the light absorption layer is thicker than the first coating layer along a direction normal to the bottom of the substrate.

15. The photodetector structure as claimed in claim 14 , wherein the light absorption layer extends above the first coating layer relative to the bottom of the substrate.

16. The photodetector structure as claimed in claim 1 , wherein the light absorption layer covers an entirety of a side surface of the first coating layer, the lower surfaces of the light absorption layer and the optical waveguide facing the substrate and being perpendicular to the side surfaces of the first coating layer and the light absorption layer.