IP Library Granted Patent US 11,107,757
Granted Patent B2
US 11,107,757 · App. 16/855,629 · Granted Aug 31, 2021

Integrated circuit structures in package substrates

Inventors: Sanka Ganesan (Chandler, AZ); William James Lambert (Chandler, AZ); Zhichao Zhang (Chandler, AZ); Sri Chaitra Jyotsna Chavali (Chandler, AZ); Stephen Andrew Smith (Laveen, AZ); Michael James Hill (Gilbert, AZ); Zhenguo Jiang (Chandler, AZ)
Assignee: Intel Corporation
H01L23/49816H01L21/4832H01L21/4853H01L21/568H01L23/3107H01L24/73H01L25/0657H01L25/105H05K1/181H05K7/023
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Quick Facts
Patent No.
US 11,107,757
App. No.
16/855,629
Granted
Aug 31, 2021
Kind
B2
Abstract

Disclosed herein are integrated circuit (IC) structures that may be included in package substrates. For example, disclosed herein are passive components in package substrate, wherein the passive components include at least one non-circular via and at least one pad in contact with the at least one non-circular via, and the passive components include an inductor or a capacitor. Other embodiments are also disclosed.

Claims (30)

1. An integrated circuit (IC) package, comprising:

a package substrate; and

a die coupled to the package substrate;

wherein the package substrate includes a shield structure, wherein the shield structure includes at least one via and at least one pad arranged to provide solid walls of conductive material proximate to edges of the package substrates such that the solid walls of conductive material together provide a continuous conductive material ring around an interior portion of the package substrate.

2. The IC package of claim 1 , wherein the shield structure includes a metal plane having at least one opening.

3. The IC package of claim 2 , wherein an opening in the metal plane is located under the die.

4. The IC package of claim 2 , wherein the metal plane is coplanar with conductive contacts of the package substrate, and the die is coupled to the conductive contacts by interconnects that include solder.

5. The IC package of claim 1 , wherein the shield structure provides a hermetic seal at edges of the package substrate.

6. The IC package of claim 1 , further comprising:

a metal layer on the die, wherein the die is between the metal layer and the package substrate.

7. The IC package of claim 6 , wherein the metal layer does not extend onto side faces of the die.

8. The IC package of claim 1 , further comprising:

a metal layer at side faces of the die.

9. The IC package of claim 1 , further comprising:

a metal layer shielding interconnects between the die and the package substrate.

10. The IC package of claim 1 , further comprising:

a mold material above the die and the package substrate.

11. An antenna structure in an integrated circuit (IC) package substrate, comprising:

a first metal layer including an antenna and a ground plane having a first opening portion into which the antenna extends;

a feeding structure coupled to the antenna, wherein the feeding structure includes at least one via; and

a second metal layer, wherein the second metal layer includes at least a portion of the feeding structure, and the feeding structure extends into a second opening portion in the second metal layer.

12. The antenna structure of claim 11 , wherein the antenna has an elliptical portion.

13. The antenna structure of claim 12 , wherein a major axis of the elliptical portion has a length between 1 millimeter and 2 millimeters.

14. The antenna structure of claim 11 , wherein the first opening portion has a rectangular shape.

15. The antenna structure of claim 11 , wherein the feeding structure includes multiple vias.

16. The antenna structure of claim 11 , wherein the second metal layer includes a ground plane coupled to the ground plane of the first metal layer by vias and pads.

17. The antenna structure of claim 16 , wherein the vias are non-circular.

18. The antenna structure of claim 11 , wherein the antenna structure is a millimeter wave antenna structure.

19. The antenna structure of claim 11 , wherein a height of the antenna structure is less than 300 microns.

20. The antenna structure of claim 11 , wherein the antenna structure includes a third opening portion that extends between the first opening portion and the second opening portion.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 17, 2025
From: INTEL CORPORATION
To: SK HYNIX NAND PRODUCT SOLUTIONS CORP. (DBA SOLIDIGM)
Reel/Frame 072915/0744 →
Continuity (2)
Continuation 15944728 · Apr 3, 2018
Related Publication 20200251411A1 · Aug 6, 2020