Microelectromechanical device, method for manufacturing a microelectromechanical device, and method for manufacturing a system on chip using a CMOS process

1. A method for manufacturing a microelectromechanical systems (MEMS) device, the method comprising:

forming a cavity in a bulk semiconductor substrate;

defining a movably suspended mass in the bulk semiconductor substrate by one or more trenches extending from a main surface area of the bulk semiconductor substrate into the cavity;

arranging a cap structure on the main surface area of the bulk semiconductor substrate; and

forming a first capacitive structure comprising:

arranging a first electrode structure on the movably suspended mass; and

providing a second electrode structure at the cap structure such that the first electrode structure and the second electrode structure are spaced apart in a first direction perpendicular to the main surface area of the bulk semiconductor substrate; and

depositing a sacrificial layer on the main surface area of the bulk semiconductor substrate to close the one or more trenches extending from the main surface area of the bulk semiconductor substrate to the cavity;

structuring the sacrificial layer to obtain a structured sacrificial layer; and

depositing a first electrode structure material into a structure of the structured sacrificial layer to arrange the first electrode structure on the movably suspended mass.

2. The method according to claim 1 , wherein forming the cavity in the bulk semiconductor substrate is performed by a silicon-on-nothing process.

3. The method according to claim 1 , further comprising:

depositing an intermediate sacrificial layer on the first electrode structure to obtain a stack of sacrificial layers;

depositing a second electrode structure material on the intermediate sacrificial layer; and

structuring the second electrode structure material to form a second electrode structure.

4. The method according to claim 3 , further comprising:

depositing a cap structure material on the second electrode structure and a remaining portion of the semiconductor material, wherein the cap structure material is connected to the second electrode structure; and

removing the stack of sacrificial layers as to obtain the cap structure having attached the second electrode structure.

5. The method according to claim 4 , wherein:

the method is a complementary metal-oxide-semiconductor (CMOS) process, and

the cap structure is formed from an oxide in parallel to an oxide of an interlayer dielectric.

6. The method according to claim 1 , wherein at least one of arranging the cap structure on the main surface area of the bulk semiconductor substrate and forming the first capacitive structure is performed in a back end of line process.

7. The method according to claim 1 , further comprising:

structuring the bulk semiconductor substrate to form the first electrode structure.

8. A method for manufacturing a microelectromechanical systems (MEMS) device, the method comprising:

forming a cavity in a bulk semiconductor substrate;

defining a movably suspended mass in the bulk semiconductor substrate by one or more trenches extending from a main surface area of the bulk semiconductor substrate into the cavity;

arranging a cap structure on the main surface area of the bulk semiconductor substrate;

forming a first capacitive structure comprising:

arranging a first electrode structure on the movably suspended mass; and

providing a second electrode structure at the cap structure such that the first electrode structure and the second electrode structure are spaced apart in a first direction perpendicular to the main surface area of the bulk semiconductor substrate; and

forming spring elements that are connected to and between the movably suspended mass and the bulk semiconductor substrate such that the movably suspended mass is suspended from the bulk semiconductor substrate within the cavity via the spring elements,

wherein the spring elements comprise an electrical connection configured to electrically connect the first electrode structure to the bulk semiconductor substrate.

9. A method for manufacturing a microelectromechanical systems (MEMS) device, the method comprising:

forming a cavity in a bulk semiconductor substrate;

defining a movably suspended mass in the bulk semiconductor substrate by one or more trenches extending from a main surface area of the bulk semiconductor substrate into the cavity;

arranging a cap structure on the main surface area of the bulk semiconductor substrate; and

forming a first capacitive structure comprising:

arranging a first electrode structure on the movably suspended mass; and

providing a second electrode structure at the cap structure such that the first electrode structure and the second electrode structure are spaced apart in a first direction perpendicular to the main surface area of the bulk semiconductor substrate,

wherein:

the main surface area extends in a second direction orthogonal to the first direction, and

a projection of the first electrode structure and the second electrode structure are offset from each other in the second direction such that a first portion of the first electrode structure overlaps with a first portion of the second electrode structure in the first direction, a second portion of the first electrode structure does not overlap with the second electrode structure in the first direction, and a second portion of the second electrode structure does not overlap with the first electrode structure in the first direction perpendicular to the main surface area of the bulk semiconductor substrate partially overlaps with the first electrode structure.

10. A method for manufacturing a microelectromechanical systems (MEMS) device, the method comprising:

forming a cavity in a bulk semiconductor substrate;

defining a movably suspended mass in the bulk semiconductor substrate by one or more trenches extending from a main surface area of the bulk semiconductor substrate into the cavity;

arranging a cap structure on the main surface area of the bulk semiconductor substrate;

forming a first capacitive structure comprising:

arranging a first electrode structure on the movably suspended mass; and

providing a second electrode structure at the cap structure such that the first electrode structure and the second electrode structure are spaced apart in a first direction perpendicular to the main surface area of the bulk semiconductor substrate; and

forming a second capacitive structure comprising:

providing the first electrode structure arranged on the movably suspended mass; and

arranging a third electrode structure at the cap structure adjacent to the second electrode structure, wherein the first electrode structure and the third electrode structure are spaced apart in the first direction perpendicular to the main surface area of the bulk semiconductor substrate.

11. The method according to claim 10 , wherein:

the main surface area extends in a second direction orthogonal to the first direction,

the first electrode structure and the second electrode structure are offset from each other in the second direction such that a first portion of the first electrode structure overlaps with a first portion of the second electrode structure in the first direction, a second portion of the first electrode structure does not overlap with the second electrode structure in the first direction, and a second portion of the second electrode structure does not overlap with the first electrode structure in the first direction, and

the first electrode structure and the third electrode structure are offset from each other in the second direction such that the second portion of the first electrode overlaps with a first portion of the third electrode structure in the first direction, and a second portion of the third electrode structure does not overlap with the first electrode structure in the first direction.

12. The method according to claim 11 , further comprising:

arranging a fourth electrode structure arranged on the movably suspended mass, wherein the fourth electrode and the second portion of the third electrode structure are spaced apart and overlap in the first direction perpendicular to the main surface area of the bulk semiconductor substrate.

13. A method for manufacturing a system on chip using a CMOS process, wherein the system on chip comprises a microelectromechanical systems (MEMS) device and a control circuit to read out the MEMS device, the method comprising:

forming the MEMS device comprising:

forming a cavity in a bulk semiconductor substrate;

defining a movably suspended mass in the bulk semiconductor substrate by one or more trenches extending from a main surface area of the bulk semiconductor substrate into the cavity;

arranging a cap structure on the main surface area of the bulk semiconductor substrate;

forming a first capacitive structure comprising:

arranging a first electrode structure on the movably suspended mass; and

providing a second electrode structure at the cap structure such that the first electrode structure and the second electrode structure are spaced apart in a first direction perpendicular to the main surface area of the bulk semiconductor substrate; and

forming spring elements that are connected to and between the movably suspended mass and the bulk semiconductor substrate such that the movably suspended mass is suspended from the bulk semiconductor substrate within the cavity via the spring elements, wherein the spring elements comprise an electrical connection configured to electrically connect the first electrode structure to the bulk semiconductor substrate; and

forming the control circuit while forming the MEMS device.

14. The method according to claim 13 , wherein:

the main surface area extends in a second direction orthogonal to the first direction,

a projection of the first electrode structure and the second electrode structure are offset from each other in the second direction such that a first portion of the first electrode structure overlaps with a first portion of the second electrode structure in the first direction, a second portion of the first electrode structure does not overlap with the second electrode structure in the first direction, and a second portion of the second electrode structure does not overlap with the first electrode structure in the first direction perpendicular to the main surface area of the bulk semiconductor substrate partially overlaps with the first electrode structure.

15. The method according to claim 13 , further comprising:

forming a second capacitive structure comprising:

providing the first electrode structure arranged on the movably suspended mass; and

arranging a third electrode structure at the cap structure adjacent to the second electrode structure, wherein the first electrode structure and the third electrode structure are spaced apart in the first direction perpendicular to the main surface area of the bulk semiconductor substrate.

16. The method according to claim 15 , wherein:

the main surface area extends in a second direction orthogonal to the first direction,

the first electrode structure and the second electrode structure are offset from each other in the second direction such that a first portion of the first electrode structure overlaps with a first portion of the second electrode structure in the first direction, a second portion of the first electrode structure does not overlap with the second electrode structure in the first direction, and a second portion of the second electrode structure does not overlap with the first electrode structure in the first direction, and

the first electrode structure and the third electrode structure are offset from each other in the second direction such that the second portion of the first electrode overlaps with a first portion of the third electrode structure in the first direction, and a second portion of the third electrode structure does not overlap with the first electrode structure in the first direction.

17. The method according to claim 16 , further comprising:

arranging a fourth electrode structure arranged on the movably suspended mass, wherein the fourth electrode and the second portion of the third electrode structure are spaced apart and overlap in the first direction perpendicular to the main surface area of the bulk semiconductor substrate.

18. The method according to claim 16 , wherein forming the MEMS device further comprises:

depositing a sacrificial layer on the main surface area of the bulk semiconductor substrate to close the one or more trenches extending from the main surface area of the bulk semiconductor substrate to the cavity;

structuring the sacrificial layer to obtain a structured sacrificial layer; and

depositing a first electrode structure material into a structure of the structured sacrificial layer to arrange the first electrode structure on the movably suspended mass.