Multidie supports for reducing die warpage
Implementations of a semiconductor device may include a first largest planar surface, a second largest planar surface and a thickness between the first largest planar surface and the second largest planar surface; and one of a permanent die support structure, a temporary die support structure, or any combination thereof coupled to one of the first largest planar surface, the second largest planar surface, the thickness, or any combination thereof. The first largest planar surface, the second largest planar surface, and the thickness may be formed by at least two semiconductor die. The warpage of one of the first largest planar surface or the second largest planar surface may be less than 200 microns.
1. A semiconductor device comprising:
a first largest planar surface, a second largest planar surface and a thickness between the first largest planar surface and the second largest planar surface; and
one of a permanent die support structure, a temporary die support structure, or any combination thereof coupled to one of the first largest planar surface, the second largest planar surface, the thickness, or any combination thereof;
wherein the first largest planar surface, the second largest planar surface, and the thickness are formed by at least two singulated semiconductor die coupled through a common die street;
wherein a warpage of one of the first largest planar surface or the second largest planar surface is less than 200 microns.
2. The device of claim 1 , wherein the thickness is between 0.1 microns and 125 microns.
3. The device of claim 1 , wherein a perimeter of the at least two singulated semiconductor die is rectangular and a size of the at least two singulated semiconductor die coupled through the common die street is at least 6 mm by 6 mm.
4. The device of claim 1 , wherein a perimeter of the at least two singulated semiconductor die is rectangular and a size of the at least two singulated semiconductor die coupled through the common die street is 211 mm by 211 mm or smaller.
5. The device of claim 1 , wherein the permanent die support structure comprises a mold compound.
6. The device of claim 1 , wherein a perimeter of the at least two singulated semiconductor die coupled through the common die street comprises a closed shape.
7. The device of claim 1 , wherein the one of the permanent die support structure, the temporary die support structure, or any combination thereof comprises a perimeter comprising a closed shape.
8. The device of claim 1 , further comprising one of a second permanent die support structure, a second temporary die support structure, or any combination thereof coupled to one of the first largest planar surface, the second largest planar surface, the thickness, or any combination thereof.
9. The device of claim 1 , wherein one of the permanent die support structure, the temporary die support structure, or any combination thereof comprises two or more layers.
10. A die support structure comprising:
a material configured to be one of permanently coupled or temporarily coupled with:
a first largest planar surface, a second largest planar surface, a thickness between the first largest planar surface and the second largest planar surface, or any combination thereof;
wherein the first largest planar surface, the second largest planar surface, and the thickness are formed by at least two singulated semiconductor die coupled through a common die street; and
wherein the material is configured to reduce a warpage of one of the first largest planar surface or the second largest planar surface to less than 200 microns.
11. The die support structure of claim 10 , wherein the thickness is between 0.1 microns and 125 microns.
12. The die support structure of claim 10 , wherein the material is a mold compound.
13. The die support structure of claim 10 , wherein the material is configured to be removable by one of exposure to light, ultrasonic energy, peeling, etching, grinding, or any combination thereof.
14. The die support structure of claim 10 , wherein the material comprises a perimeter comprising a closed shape.
15. The die support structure of claim 10 , wherein the material is a first portion of material and further comprising a second portion of material configured to be coupled to one of the first largest planar surface, the second largest planar surface, the thickness, or any combination thereof.
16. A method of forming a die support structure comprising:
one of permanently coupling or temporarily coupling a material with a first largest planar surface, a second largest planar surface, a thickness between the first largest planar surface and the second largest planar surface, or any combination thereof:
wherein the first largest planar surface, a second largest planar surface, and the thickness are formed by at least two singulated semiconductor die coupled through a common die street; and
reducing a warpage of one of the first largest planar surface or the second largest planar surface to less than 200 microns through the material.
17. The method of claim 16 , further comprising removing the material using one of light, etching, peeling, ultrasonic energy, grinding, or any combination thereof.
18. The method of claim 16 , further comprising removing the material after bonding the at least two or more die to one of a substrate, a leadframe, an additional die, a lead, a redistribution layer, and any combination thereof.
19. The method of claim 16 , wherein the material is a first portion of material and further comprising:
one of permanently coupling or temporarily coupling a second portion of material with one of the first largest planar surface, the second largest planar surface, the thickness, or any combination thereof.
20. The method of claim 19 , wherein the second portion of material is a second layer of material coupled over the first portion of material.