Active bridging apparatus
Techniques and mechanisms for coupling chiplets to microchips utilizing active bridges. The active bridges include circuits that provide various functions and capabilities that previously may have been located on the microchips and/or the chiplets. Furthermore, the active bridges may be coupled to the microchips and the chiplets via “native interconnects” utilizing direct bonding techniques. Utilizing the active bridges and the direct bonding techniques of the active bridges to the microchips and the chiplets, the pitch for the interconnects can be greatly reduced going from a pitch in the millimeters to a fine pitch that may be in a range of less than one micron to approximately five microns.
1. A microelectronic device comprising:
a base die configured as a system on chip (SoC);
a plurality of secondary dies positioned outside one or more peripheral edges of the base die, wherein the plurality of secondary dies comprises at least a first device and a second device positioned outside of a same peripheral edge of the base die, the first device positioned further from the same peripheral edge of the base die than the second device; and
a plurality of active bridge dies communicatively coupling the plurality of secondary dies to the base die, wherein the plurality of active bridge dies comprises at least (i) a first active bridge die communicatively coupling the first device to the base die and (ii) a second active bridge die communicatively coupling the second device to the base die, and wherein the one or both of the first and second active bridge dies are configured to re-clock a signal received at the base die from a respective one of the first or second device relative to a signal received at the base die from the other one of the first or second device.
2. The microelectronic device of claim 1 , wherein a secondary die of the plurality of secondary dies is configured as high bandwidth memory (HBM).
3. The microelectronic device of claim 2 , wherein an active bridge die of the plurality of active bridge dies corresponding to the secondary die is configured to provide buffering between the base die and the secondary die.
4. The microelectronic device of claim 1 , wherein an active bridge die of the plurality of active bridge dies is coupled to the base die via direct bond interconnect (DBI) and the active bridge die is coupled to a corresponding secondary die of the plurality of secondary dies via DBI.
5. The microelectronic device of claim 1 , wherein an active bridge die of the plurality of active bridge dies is configured to provide an interface between the base die and a corresponding secondary die of the plurality of secondary dies.
6. The microelectronic device of claim 1 , wherein an active bridge die of the plurality of active bridge dies is configured to provide physical (PHY) layer and controller functions for the base die and a corresponding secondary die of the plurality of secondary dies.
7. The microelectronic device of claim 1 , wherein an active bridge die of the plurality of active bridge dies is configured to provide a cache.
8. The microelectronic device of claim 7 , wherein a secondary die corresponding to the active bridge die is configured as a SoC.
9. The microelectronic device of claim 8 , wherein the active bridge die is configured to provide buffering between the base die and the secondary die.
10. The microelectronic device of claim 1 , wherein an active bridge die of the plurality of active bridge dies is configured to provide at least one of (i) an interconnect with level shift between the base die and a corresponding secondary die of the plurality of secondary dies, (ii) clock gating between the base die and the corresponding secondary die, (iii) voltage gating between the base die and the corresponding secondary die, and (iv) clock distribution between the base die and the corresponding secondary die.
11. A microelectronic device comprising:
a base die configured as a system on chip (SoC);
a plurality of secondary dies positioned outside one or more peripheral edges of the base die, wherein at least one secondary die of the plurality of secondary dies is configured as memory, wherein the plurality of secondary dies comprises at least a first device and a second device positioned outside of a same peripheral edge of the base die, the first device positioned further from the same peripheral edge of the base die than the second device; and
a plurality of active bridge dies coupled to the base die via direct bond interconnect (DBI) and coupled to the plurality of secondary dies via DBI, wherein the plurality of active bridge dies comprises at least (i) a first active bridge die communicatively coupling the first device to the base die and (ii) a second active bridge die communicatively coupling the second device to the base die, and wherein one or both of the first or second active bridge dies are configured to re-clock a signal received at the base die from a respective one the first device or second device relative to a signal received at the base die from the other one of the first or second device.
12. The microelectronic device of claim 11 , wherein an active bridge die of the plurality of active bridge dies is configured to provide buffering between the base die and a corresponding secondary die of the plurality of secondary dies.
13. The microelectronic device of claim 12 , wherein an active bridge die of the plurality of active bridge dies is configured to provide an interface between the base die and a corresponding secondary die of the plurality of secondary dies.
14. The microelectronic device of claim 11 , wherein an active bridge die of the plurality of active bridge dies is configured to provide physical (PHY) layer and controller functions for the base die and a corresponding secondary die of the plurality of secondary dies.
15. The microelectronic device of claim 11 , wherein an active bridge die of the plurality of active bridge dies is configured to provide a cache.
16. The microelectronic device of claim 11 , wherein an active bridge die of the plurality of active bridge dies is configured to provide at least one of (i) an interconnect with level shift between the base die and a corresponding secondary die of the plurality of secondary dies, (ii) clock gating between the base die and the corresponding secondary die, (iii) voltage gating between the base die and the corresponding secondary die, and (iv) clock distribution between the base die and the corresponding secondary die.
17. A method for forming a microelectronic device comprising a base die configured as a system on a chip (SoC), a plurality of secondary dies positioned outside one or more peripheral edges of the base die, and a plurality of active bridge dies, the method comprising:
communicatively coupling the base die to the plurality of secondary dies using the plurality of active bridge dies, the base die coupled to the plurality of active bridge dies via direct bond interconnect (DBI) and the plurality of active bridge dies coupled to the plurality of secondary dies via DBI,
wherein the plurality of secondary dies comprises at least a first device and a second device positioned outside of a same peripheral edge of the base die, the first device positioned further from the same peripheral edge of the base die than the second device,
wherein the plurality of active bridge dies comprises at least (i) a first active bridge die communicatively coupling the first device to the base die and (ii) a second active bridge die communicatively coupling the second device to the base die, and
wherein one or both of the first or second active bridge dies are configured to re-clock a signal received at the base die from a respective one of the first or second device relative to a signal received at the base die from the other one of the first or second device;
passing a signal from one of the first or second device to a core of the base die through a respective active bridge die; and
re-clocking the signal in the respective active bridge die relative to a signal received at the core of the base die from the other one of the first or second device.
18. The method of claim 17 , wherein an active bridge die of the plurality of active bridge dies provides an interface between the base die and a corresponding secondary die of the plurality of secondary dies.
19. The method of claim 17 , wherein an active bridge die of the plurality of active bridge dies provides physical (PHY) layer and controller functions for the base die and a corresponding secondary die of the plurality of secondary dies.
20. The method of claim 17 , wherein an active bridge die of the plurality of active bridge dies provides a cache.