Press-fit terminal with improved whisker inhibition
A press-fit terminal for insertion into a conductive through-hole of a substrate includes an elastic deformation part with an outer and inner surface, the press-fit terminal includes, in sequence, a copper or copper alloy base, nickel or a nickel alloy barrier layer, a tin or tin alloy layer and an indium top layer. The press-fit terminal shows reduced whisker formation.
1. A press-fit terminal to be inserted into a conductive through-hole of a printed circuit board, the press-fit terminal comprises: a first and a second elastic deformation part, the first and second elastic deformation parts are along the length of the press-fit terminal, the first and the second elastic deformation parts have an outer surface and an inner surface, the first and second elastic deformation parts are joined at one end by a guide part and at an end opposite to the guide part by a neck part, and a channel part is formed between the first and second elastic deformation parts, the press-fit terminal comprises, in sequence, a copper or copper alloy base, a nickel or a nickel alloy barrier layer adjacent to the copper or copper alloy base, a tin or tin alloy layer adjacent the nickel or the nickel alloy barrier layer, wherein the tin alloy is selected from the group consisting of tin-bismuth and tin-indium, and an indium layer adjacent to the tin or tin alloy layer.
2. The press-fit terminal to be inserted into a conductive through-hole of a printed circuit board of claim 1 , wherein the nickel or nickel alloy layer has a thickness of 0.5-5 μm.
3. The press-fit terminal to be inserted into a conductive through-hole of a printed circuit board of claim 1 , wherein the tin or tin alloy layer has a thickness of 0.5-5 μm.
4. The press-fit terminal to be inserted into a conductive through-hole of a printed circuit board of claim 1 , wherein the indium layer has a thickness of 0.1-3 μm.
5. The press-fit terminal to be inserted into a conductive through-hole of a printed circuit board of claim 4 , wherein the indium layer has a thickness of 0.1-0.4 μm.