Method of processing substate, method of manufacturing semiconductor device, substrate processing apparatus, and recording medium

1. A method of processing a substrate, comprising:

forming a film on the substrate in a process chamber by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing:

(a) supplying a precursor gas and an inert gas to the substrate; and

(b) supplying a reaction gas to the substrate,

wherein in (a), at least one selected from the group of the precursor gas and the inert gas stored in a first tank is supplied to the substrate from a first supplier, and at least one selected from the group of the precursor gas and the inert gas stored in a second tank different from the first tank is supplied to the substrate from a second supplier different from the first supplier,

wherein a concentration of the precursor gas in the first tank in a state where at least one selected from the group of the precursor gas and the inert gas is stored in the first tank is set to be different from a concentration of the precursor gas in the second tank in a state where at least one selected from the group of the precursor gas and the inert gas is stored in the second tank, and

wherein in (a), the at least one selected from the group of the precursor gas and the inert gas supplied from the first supplier and the at least one selected from the group of the precursor gas and the inert gas supplied from the second supplier are in contact with each other in a plane of the substrate so as to suppress multiple adsorption of molecules constituting the precursor gas on a surface of the substrate.

2. The method of claim 1 , wherein the concentration of the precursor gas in the first tank in the state where at least one selected from the group of the precursor gas and the inert gas is stored in the first tank is set to be higher than the concentration of the precursor gas in the second tank in the state where at least one selected from the group of the precursor gas and the inert gas is stored in the second tank.

3. The method of claim 1 , wherein a concentration of the inert gas in the second tank in the state where at least one selected from the group of the precursor gas and the inert gas is stored in the second tank is set to be higher than a concentration of the inert gas in the first tank in the state where at least one selected from the group of the precursor gas and the inert gas is stored in the first tank.

4. The method of claim 1 , wherein the concentration of the precursor gas in the first tank is set to be higher than a concentration of the inert gas in the first tank in the state where at least one selected from the group of the precursor gas and the inert gas is stored in the first tank, and

wherein a concentration of the inert gas in the second tank is set to be higher than the concentration of the precursor gas in the second tank in the state where at least one selected from the group of the precursor gas and the inert gas is stored in the second tank.

5. The method of claim 1 , wherein the concentration of the precursor gas in the first tank in the state where at least one selected from the group of the precursor gas and the inert gas is stored in the first tank is set to 100%, and

wherein a concentration of the inert gas in the second tank in the state where at least one selected from the group of the precursor gas and the inert gas is stored in the second tank is set to 100%.

6. The method of claim 1 , wherein an amount of the precursor gas in the first tank in the state where at least one selected from the group of the precursor gas and the inert gas is stored in the first tank is set to be larger than an amount of the precursor gas in the second tank in the state where at least one selected from the group of the precursor gas and the inert gas is stored in the second tank.

7. The method of claim 1 , wherein an amount of the inert gas in the second tank in the state where at least one selected from the group of the precursor gas and the inert gas is stored in the second tank is set to be larger than an amount of the inert gas in the first tank in the state where at least one selected from the group of the precursor gas and the inert gas is stored in the first tank.

8. The method of claim 1 , wherein an amount of the precursor gas in the first tank is set to be larger than an amount of the inert gas in the first tank in the state where at least one selected from the group of the precursor gas and the inert gas is stored in the first tank, and

wherein an amount of the inert gas in the second tank is set to be larger than an amount of the precursor gas in the second tank in the state where at least one selected from the group of the precursor gas and the inert gas is stored in the second tank.

9. The method of claim 1 , wherein the precursor gas is present alone in the first tank in the state where at least one selected from the group of the precursor gas and the inert gas is stored in the first tank, and

wherein the inert gas is present alone in the second tank in the state where at least one selected from the group of the precursor gas and the inert gas is stored in the second tank.

10. The method of claim 1 , wherein a central angle formed by a first straight line connecting a center of the substrate and the first supplier and a second straight line connecting the center of the substrate and the second supplier in a plane view is an acute angle, and

wherein in at least (a), when a predetermined position of an edge portion of the substrate passes through a triangular region connecting the first supplier, the second supplier, and the center of the substrate in the plane view, the substrate is rotated such that the predetermined position passes through the second straight line after passing through the first straight line.

11. The method of claim 1 , wherein in (a), the at least one selected from the group of the precursor gas and the inert gas supplied from the first supplier and the at least one selected from the group of the precursor gas and the inert gas supplied from the second supplier are mixed with each other in the plane of the substrate so as to promote non-multiple adsorption of molecules constituting the precursor gas on a surface of the substrate.

12. The method of claim 1 , wherein in (a), the precursor gas supplied from the first supplier and the inert gas supplied from the second supplier are in contact with each other in the plane of the substrate so as to suppress multiple adsorption of molecules constituting the precursor gas on a surface of the substrate.

13. The method of claim 1 , wherein in (a), the precursor gas supplied from the first supplier and the inert gas supplied from the second supplier are mixed with each other in the plane of the substrate so as to promote non-multiple adsorption of molecules constituting the precursor gas on a surface of the substrate.

14. The method of claim 1 , wherein (a) is performed in a state where an exhaust of the precursor gas from the process chamber is stopped.

15. The method of claim 1 , wherein (a) is performed in a state where a valve installed at an exhaust pipe configured to exhaust an interior of the process chamber is fully closed.

16. The method of claim 1 , wherein in (a), the process chamber is filled with the inert gas before the precursor gas and the inert gas are supplied to the substrate.

17. The method of claim 1 , wherein in (b), the reaction gas supplied to a plurality of plasma exciters at different flow rates is plasma-excited in each of the plurality of plasma exciters and supplied to the substrate.

18. A method of manufacturing a semiconductor device comprising the method of claim 1 .

19. A substrate processing apparatus comprising:

a process chamber in which a substrate is processed;

a first supply system configured to supply at least one selected from the group of a precursor gas and an inert gas stored in a first tank to the substrate in the process chamber from a first supplier;

a second supply system configured to supply at least one selected from the group of the precursor gas and the inert gas stored in a second tank different from the first tank to the substrate in the process chamber from a second supplier different from the first supplier;

a third supply system configured to supply a reaction gas to the substrate in the process chamber; and

a controller configured to be capable of controlling the first supply system, the second supply system and the third supply system to perform a process of forming a film on the substrate in the process chamber by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: (a) supplying the precursor gas and the inert gas to the substrate; and (b) supplying the reaction gas to the substrate, wherein in (a), at least one selected from the group of the precursor gas and the inert gas stored in the first tank is supplied to the substrate from the first supplier, and at least one selected from the group of the precursor gas and the inert gas stored in the second tank is supplied to the substrate from the second supplier, wherein a concentration of the precursor gas in the first tank in a state where at least one selected from the group of the precursor gas and the inert gas is stored in the first tank is set to be different from a concentration of the precursor gas in the second tank in a state where at least one selected from the group of the precursor gas and the inert gas is stored in the second tank, and wherein in (a), the at least one selected from the group of the precursor gas and the inert gas supplied from the first supplier and the at least one selected from the group of the precursor gas and the inert gas supplied from the second supplier are in contact with each other in a plane of the substrate so as to suppress multiple adsorption of molecules constituting the precursor gas on a surface of the substrate.

20. A non-transitory computer-readable recording medium storing a program that causes, by a computer, a substrate processing apparatus to perform a process comprising:

forming a film on a substrate in a process chamber of the substrate processing apparatus by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing:

(a) supplying a precursor gas and an inert gas to the substrate; and

(b) supplying a reaction gas to the substrate,

wherein in (a), at least one selected from the group of the precursor gas and the inert gas stored in a first tank is supplied to the substrate from a first supplier, and at least one selected from the group of the precursor gas and the inert gas stored in a second tank different from the first tank is supplied to the substrate from a second supplier different from the first supplier,

wherein a concentration of the precursor gas in the first tank in a state where at least one selected from the group of the precursor gas and the inert gas is stored in the first tank is set to be different from a concentration of the precursor gas in the second tank in a state where at least one selected from the group of the precursor gas and the inert gas is stored in the second tank, and

wherein in (a), the at least one selected from the group of the precursor gas and the inert gas supplied from the first supplier and the at least one selected from the group of the precursor gas and the inert gas supplied from the second supplier are in contact with each other in a plane of the substrate so as to suppress multiple adsorption of molecules constituting the precursor gas on a surface of the substrate.