In-cell bypass diode
A solar cell can include a built-in bypass diode. In one embodiment, the solar cell can include an active region disposed in or above a first portion of a substrate and a bypass diode disposed in or above a second portion of the substrate. The first and second portions of the substrate can be physically separated with a groove. A metallization structure can couple the active region to the bypass diode.
1. A solar cell, the solar cell comprising:
a semiconductor substrate having a first conductivity;
a first P-N junction disposed in or above a first portion of the semiconductor substrate;
a second P-N junction disposed in or above a second portion of the semiconductor substrate, wherein the first portion of the semiconductor substrate is physically isolated from the second portion by a scribe disposed entirely through the semiconductor substrate and opposite the first P-N junction and the second P-N junction; and
a metallization structure disposed on a portion of the first P-N junction and on a portion of the second P-N junction disposed so as to couple the first P-N junction to the second P-N junction above the semiconductor substrate, wherein the first portion of the semiconductor substrate is physically isolated from the second portion so as to provide an in-cell bypass diode from the second portion.
2. The solar cell of claim 1 , wherein the scribe is disposed along a first direction and along a second direction different from the first direction.
3. The solar cell of claim 1 , wherein the first P-N junction above the first portion includes abutting P-type and N-type polysilicon regions.
4. The solar cell of claim 1 , wherein the substrate is an N-type doped substrate.
5. The solar cell of claim 1 , wherein the first P-N junction is disposed in the first portion of the semiconductor substrate, and wherein the second P-N junction is disposed in the second portion of the semiconductor substrate.
6. The solar cell of claim 1 , wherein the first P-N junction is disposed above the first portion of the semiconductor substrate, and wherein the second P-N junction is disposed above the second portion of the semiconductor substrate.
7. The solar cell of claim 1 , wherein the solar cell comprises two sub-cells each having a respective in-cell bypass diode that comprises a portion of the first P-N junction.
8. The solar cell of claim 1 , wherein the in-cell bypass diode is located at an edge of the solar cell.
9. The solar cell of claim 1 , further comprising a buffer material disposed between the metallization structure and the portion of the first P-N junction and the portion of the second P-N junction.
10. The solar cell of claim 1 , wherein the metallization structure comprises a conductive foil.
11. The solar cell of claim 10 , wherein the conductive foil comprises aluminum foil.