AlN crystal preparation method, AlN crystals, and organic compound including AlN crystals
A method for producing AlN crystals includes using at least one element, excluding Si, that satisfies a condition under which the element forms a compound with neither Al nor N or a condition under which the element forms a compound with any of Al and N provided that the standard free energy of formation of the compound is larger than that of AlN; melting a composition containing at least Al and the element; and reacting the Al vapor with nitrogen gas at a predetermined reaction temperature to produce AlN crystals.
1. A method for producing AlN crystals, comprising:
using an alloy comprising Al and an element, excluding Si, that satisfies a condition under which the element forms a compound with neither Al nor N or a condition under which the element forms a compound with either of Al and N provided that the standard free energy of formation of the compound is larger than that of AlN;
melting the alloy;
introducing nitrogen gas to establish an atmosphere of nitrogen gas;
reacting the Al with the nitrogen gas at a predetermined temperature and at a predetermined pressure to produce AlN crystals, wherein the AlN crystals comprise AlN whiskers,
wherein a first interaction energy between Al and the element becomes negative, and an absolute value of the first interaction energy is larger than a second interaction energy between Al and Ge.
2. The method for producing AlN crystals according to claim 1 , wherein the element is any of Li, Cr, Fe, Co, Ni, Cu, and Sr.
3. The method for producing AlN crystals according to claim 1 , further comprising:
peeling the AlN whiskers from the alloy.
4. The method for producing AlN crystals according to claim 1 , wherein:
reacting the Al with the nitrogen gas comprises reacting Al vapor with the nitrogen gas.
5. The method for producing AlN crystals according to claim 1 , wherein:
the predetermined temperature is 1450-1800° C.
6. The method for producing AlN crystals according to claim 5 , wherein:
the predetermined pressure is from several mm Hg to atmospheric pressure.
7. The method for producing AlN crystals according to claim 5 , wherein:
the predetermined pressure is greater than atmospheric pressure.
8. A method for producing AlN crystals, comprising:
using an alloy consisting of Al and Fe, excluding Si;
melting the alloy;
introducing nitrogen gas to establish an atmosphere of nitrogen gas;
reacting the Al with nitrogen gas at a predetermined temperature and at a predetermined pressure to produce AlN crystals, wherein the AlN crystals comprise AlN whiskers,
wherein a first interaction energy between Al and Fe becomes negative, and
wherein an absolute value of the first interaction energy is larger than a second interaction energy between Al and Ge.
9. The method for producing AlN crystals according to claim 8 , further comprising:
peeling the AlN whiskers from the alloy.
10. The method for producing AlN crystals according to claim 8 , wherein:
the predetermined temperature is 1450-1800° C.
11. The method for producing AlN crystals according to claim 8 , wherein:
the predetermined pressure is several mm Hg to atmospheric pressure.
12. The method for producing AlN crystals according to claim 8 , wherein:
the predetermined pressure is greater than atmospheric pressure.
13. The method for producing AlN crystals according to claim 8 , wherein:
a ratio of Al to Fe is from 10:90 to 30:70.
14. The method for producing AlN crystals according to claim 8 , wherein:
the AlN whiskers have a diameter of about 0.1 to 1 μm and a length of about 10 to 50 μm.
15. The method for producing AlN crystals according to claim 8 , wherein:
the AlN whiskers have a diameter of about 0.5 to 1.5 μm and a length of about 50 μm to 1 mm.
16. The method for producing AlN crystals according to claim 8 , wherein:
the AlN whiskers have a diameter of about 1 to 2 μm and a length of greater than 1 mm.