Semiconductor device with redistribution layers on partial encapsulation and non-photosensitive passivation layers
A semiconductor device with redistribution layers on partial encapsulation is disclosed and may include providing a carrier with a non-photosensitive protection layer, forming a pattern in the non-photosensitive protection layer, providing a semiconductor die with a contact pad on a first surface, and bonding the semiconductor die to the non-photosensitive protection layer such that the contact pad aligns with the pattern formed in the non-photosensitive protection layer. A second surface opposite to the first surface of the semiconductor die, side surfaces between the first and second surfaces of the semiconductor die, and a portion of a first surface of the non-photosensitive protection layer may be encapsulated with an encapsulant. The carrier may be removed leaving the non-photosensitive protection layer bonded to the semiconductor die. A redistribution layer may be formed on the contact pad and a second surface of the non-photosensitive protection layer opposite to the first surface.
1. A semiconductor device, comprising:
a semiconductor die comprising a die top side, a die bottom side opposite the die top side, a contact pad on the die top side, and a die sidewalls between the die top side and the die bottom side;
a conductive structure electrically coupled to the contact pad on the die top side;
an encapsulating resin comprising:
a resin upper portion that covers the die top side, encapsulates sidewalls of the conductive structure, and extends beyond a footprint of the semiconductor die; and
a resin lower portion that encapsulates the die sidewalls; and
a via that extends through the resin upper portion;
wherein the conductive structure is electrically coupled to the contact pad by way of the via through the resin upper portion.
2. The semiconductor device of claim 1 , further comprising:
a conductive layer that is electrically coupled to the contact pad; and
wherein the conductive structure is electrically coupled to the contact pad via the conductive layer.
3. The semiconductor device of claim 2 , wherein the conductive layer extends beyond a footprint of the semiconductor die.
4. The semiconductor device of claim 2 , wherein a bottom side of the resin upper portion contacts a top side of the conductive layer.
5. The semiconductor device of claim 2 , wherein the conductive layer is covered by the resin upper portion.
6. The semiconductor device of claim 1 , wherein the conductive structure traverses between a bottom side of the resin upper portion and a top side of the resin upper portion.
7. The semiconductor device of claim 1 , further comprising a conductive bump coupled to the contact pad by way of the conductive structure.
8. The semiconductor device of claim 7 , wherein a lower portion of the conductive bump is separated by a greater amount from the die top side than a bottom side of the resin upper portion is separated from the die top side.
9. The semiconductor device of claim 1 , wherein the die bottom side and a bottom side of the resin lower portion are coplanar.
10. The semiconductor device of claim 1 , comprising a conductive layer that is electrically coupled to the contact pad and the conductive structure.
11. The semiconductor device of claim 10 , wherein the conductive layer extends beyond the footprint of the semiconductor die.
12. The semiconductor device of claim 10 , wherein a bottom side of the conductive layer is above the die top side.
13. The semiconductor device of claim 10 , comprising a conductive bump coupled to the contact pad by way of the conductive structure and the conductive layer.
14. A method of manufacturing a semiconductor device, the method comprising:
providing a semiconductor die in an encapsulating resin, wherein the semiconductor die comprises a die top side, a die bottom side opposite the die top side, a contact pad on the die top side, and a die sidewalls between the die top side and the die bottom side, and wherein the encapsulating resin comprises:
a resin upper portion that covers the die top side and extends beyond a footprint of the semiconductor die, and
a resin lower portion that encapsulates the die sidewalls; and
providing a conductive structure comprising sidewalls encapsulated by the resin upper portion, wherein the conductive structure is electrically coupled to the contact pad by way of a via that extends through the resin upper portion.
15. The method of claim 14 , comprising providing a conductive layer that is electrically coupled to the contact pad and the conductive structure.
16. The method of claim 15 , wherein the conductive layer extends beyond the footprint of the semiconductor die.
17. The method of claim 15 , wherein a bottom side of the resin upper portion contacts a top side of the conductive layer.
18. The method of claim 15 , wherein the conductive layer is covered by the resin upper portion.
19. The method of claim 15 , wherein the conductive structure traverses between a bottom side of the resin upper portion and a top side of the resin upper portion.
20. The method of claim 15 , providing a conductive bump coupled to the contact pad by way of the conductive structure.