Memory arrays comprising strings of memory cells and methods used in forming a memory array comprising strings of memory cells
A method used in forming a memory array comprising strings of memory cells comprises forming a conductor tier comprising conductor material on a substrate. Laterally-spaced memory-block regions are formed and individually comprise a vertical stack comprising alternating first tiers and second tiers directly above the conductor tier. Channel-material strings of memory cells extend through the first tiers and the second tiers. Horizontally-elongated lines are formed in the conductor material between the laterally-spaced memory-block regions. The horizontally-elongated lines are of different composition from an upper portion of the conductor material that is laterally-between the horizontally-elongated lines. After the horizontally-elongated lines are formed, conductive material of a lowest of the first tiers is formed that directly electrically couples together the channel material of individual of the channel-material strings and the conductor material of the conductor tier. Other embodiments, including structure independent of method, are disclosed.
1. A method used in forming a memory array comprising strings of memory cells, comprising:
forming a conductor tier comprising conductor material on a substrate;
forming laterally-spaced memory-block regions individually comprising a vertical stack comprising alternating first tiers and second tiers directly above the conductor tier, channel-material strings of memory cells extending through the first tiers and the second tiers;
forming horizontally-elongated lines in the conductor material between the laterally-spaced memory-block regions, the horizontally-elongated lines being of different composition from an upper portion of the conductor material that is laterally-between the horizontally-elongated lines; and
after forming the horizontally-elongated lines, forming conductive material in a lowest of the first tiers that directly electrically couples together the channel material of individual of the channel-material strings and the conductor material of the conductor tier.
2. The method of claim 1 comprising forming the horizontally-elongated lines before forming the vertical stack.
3. The method of claim 1 comprising forming the horizontally-elongated lines after forming the vertical stack.
4. The method of claim 1 wherein the horizontally-elongated lines extend laterally into areas of the memory-block regions that are there-above.
5. The method of claim 1 wherein the horizontally-elongated lines are not as vertically thick as the conductor tier.
6. The method of claim 1 wherein the horizontally-elongated lines have greater content of one or more of C, N, B, As, Sb, Bi, Li, Al, In, or a metal material than is present in the conductor material that is laterally-between the horizontally-elongated lines.
7. The method of claim 1 wherein the horizontally-elongated lines are not conductive.
8. The method of claim 1 wherein the horizontally-elongated lines are conductive.
9. The method of claim 1 wherein the horizontally-elongated lines are formed by ion implanting into the conductor material through mask openings in a masking material.
10. The method of claim 1 wherein a lowest surface of the channel material of the channel-material-strings is never directly against any of the conductor material of the conductor tier.
11. A method used in forming a memory array comprising strings of memory cells, comprising:
forming a conductor tier comprising conductor material on a substrate;
forming horizontally-elongated lines in the conductor material between what will comprise laterally-spaced memory-block regions there-above, the horizontally-elongated lines being of different composition from an upper portion of the conductor material that is laterally-between the horizontally-elongated lines;
after forming the horizontally-elongated lines, forming a stack comprising vertically-alternating first tiers and second tiers above the conductor tier, a lowest of the first tiers comprising sacrificial material of different composition from that of an uppermost portion of the horizontally-elongated lines in the conductor material, the stack comprising the laterally-spaced memory-block regions having horizontally-elongated trenches there-between that are individually directly above individual of the horizontally-elongated lines in the conductor material in the conductor tier, channel-material strings extending through the first tiers and the second tiers, material of the first tiers being of different composition from material of the second tiers;
isotropically etching the sacrificial material from the lowest first tier; and
after the isotropically etching, forming conductive material in the lowest first tier that directly electrically couples together the channel material of individual of the channel-material strings and the conductor material of the conductor tier.