Granted Patent B2

US 11,282,951 · App. 16/892,604 · Granted Mar 22, 2022

Inventors: Philipp Steinmann (Durham, NC); Edward Van Brunt (Raleigh, NC); Jae Hyung Park (Apex, NC); Vaishno Dasika (Morrisville, NC)

Assignee: Wolfspeed, Inc.

H01L29/7802H01L29/1608H01L29/7833

Abstract

Claims (42)

1. A semiconductor device, comprising:

a semiconductor layer structure comprising a source/drain region;

a gate dielectric layer on the semiconductor layer structure; and

a gate electrode on the gate dielectric layer, wherein the semiconductor layer structure, the gate dielectric layer and the gate electrode are stacked in a vertical direction,

wherein the source/drain region comprises a first portion comprising a first dopant concentration and a second portion comprising a second dopant concentration,

wherein the second dopant concentration is lower than the first dopant concentration,

wherein the second portion of the source/drain region is closer to a center of the gate electrode than the first portion of the source/drain region, and

wherein a first portion of the gate dielectric layer that is on the first portion of the source/drain region is thicker in the vertical direction than a second portion of the gate dielectric layer that is on the second portion of the source/drain region.

2. The semiconductor device of claim 1 , wherein the gate electrode extends on the second portion of the source/drain region.

3. The semiconductor device of claim 1 , further comprising a well region having a conductivity type that is opposite a conductivity type of the source/drain region, the well region including a channel region, wherein a distance between the channel region and the second portion of the source/drain region is between 50 Å to 2000 Å.

4. The semiconductor device of claim 1 , wherein the first dopant concentration of the first portion is between one to three orders of magnitude greater than the second dopant concentration of the second portion.

5. The semiconductor device of claim 1 , further comprising an interface between the first portion and the second portion of the source/drain region.

6. The semiconductor device of claim 5 , wherein a vertical axis defined by a side edge of the gate electrode is laterally separated from the interface between the first portion of the source/drain region and the second portion of the source/drain region by 1000 Å to 5000 Å.

7. The semiconductor device of claim 1 , wherein a thickness in the vertical direction of the gate dielectric layer over the second portion of the source/drain region is substantially uniform.

8. The semiconductor device of claim 1 , wherein the gate dielectric layer extends a first distance laterally over the source/drain region and the gate electrode extends a second distance laterally over the source/drain region, where the first distance exceeds the second distance.

9. The semiconductor device of claim 1 , wherein the second portion of the gate dielectric layer is directly adjacent a channel region of the semiconductor device and between the channel region and the first portion of the gate dielectric layer.

10. A semiconductor device comprising:

a semiconductor layer structure comprising:

a drift layer of a first conductivity type;

a well region of a second conductivity type in the drift layer; and

a source/drain region of the first conductivity type in the well region, the source/drain region having a first dopant concentration in a first portion of the source/drain region and a second dopant concentration, different from the first dopant concentration, in a second portion of the source/drain region that is laterally offset from the first portion;

a gate dielectric layer on the semiconductor layer structure; and

a gate electrode on the gate dielectric layer,

wherein the gate dielectric layer overlaps the first portion and the second portion of the source/drain region.

11. The semiconductor device of claim 10 , wherein the semiconductor layer structure further comprises a substrate comprising silicon carbide.

12. The semiconductor device of claim 10 , wherein the first dopant concentration in the first portion of the source/drain region is between one to three orders of magnitude greater than the second dopant concentration in the second portion of the source/drain region.

13. The semiconductor device of claim 10 , wherein the second portion of the source/drain region is between the first portion of the source/drain region and a channel region of the well region.

14. The semiconductor device of claim 10 , wherein a first bottom surface of the first portion of the source/drain region is at a different level than a second bottom surface of the second portion of the source/drain region.

15. The semiconductor device of claim 10 , wherein a thickness of the gate dielectric layer over the second portion of the source/drain region is substantially uniform.

16. The semiconductor device of claim 10 , wherein the gate dielectric layer extends laterally over the source/drain region farther than the gate electrode extends laterally over the source/drain region.

17. The semiconductor device of claim 10 , further comprising a channel region in the well region, wherein the second portion of the gate dielectric layer is directly adjacent the channel region and between the channel region and the first portion of the gate dielectric layer.

18. A semiconductor device, comprising:

a semiconductor layer structure comprising a source/drain region;

a gate dielectric layer on the semiconductor layer structure; and

a gate electrode on the gate dielectric layer,

wherein the source/drain region comprises a first portion comprising a first dopant concentration and a second portion comprising a second dopant concentration, and wherein an edge of the gate electrode is laterally separated from an interface between the first portion and the second portion of the source/drain region by 5000 Å or less,

wherein the gate dielectric layer extends laterally over the source/drain region farther than the gate electrode extends laterally over the source/drain region.

19. The semiconductor device of claim 18 , wherein the gate electrode overlaps the second portion of the source/drain region.

20. The semiconductor device of claim 18 , wherein a first dopant concentration of the first portion is between one to three orders of magnitude greater than a second dopant concentration of the second portion.

21. The semiconductor device of claim 18 , wherein a thickness of the gate dielectric layer over the second portion of the source/drain region is substantially uniform.

22. The semiconductor device of claim 18 , wherein the semiconductor layer structure further comprises a well region of a second conductivity type, and

wherein the second portion of the source/drain region is between the first portion of the source/drain region and the well region.

Assignments (10)