Pre-heat processes for millisecond anneal system
View Patent ↗Preheat processes for a millisecond anneal system are provided. In one example implementation, a heat treatment process can include receiving a substrate on a wafer support in a processing chamber of a millisecond anneal system; heating the substrate to an intermediate temperature; and heating the substrate using a millisecond heating flash. Prior to heating the substrate to the intermediate temperature, the process can include heating the substrate to a pre-bake temperature for a soak period.
1. A heat treatment process for a thermal processing system, the heat treatment process comprising:
receiving a substrate on a wafer support in a processing chamber of a thermal processing system;
maintaining a temperature of the substrate at a pre-bake temperature, the pre-bake temperature being in a range of about 200° C. to about 500° C. for a soak period, the soak period having a duration in a range of about 0.5 seconds to about 600 seconds;
wherein one or more oxidizing species are outgassed during the soak period, the soak period beginning after the temperature of the substrate is increased to the pre-bake temperature;
heating the substrate to an intermediate temperature by increasing the temperature from the pre-bake temperature to the intermediate temperature at a first temperature increase rate, the intermediate temperature being greater than the pre-bake temperature and less than about 900° C.; and
subsequent to heating the substrate to the intermediate temperature, heating the substrate using a heating flash, the heating flash operable to heat a top surface of the substrate at a second temperature increase rate, the second temperature increase rate greater than the first temperature increase rate.
2. The heat treatment process of claim 1 , wherein maintaining the temperature of the substrate at the pre-bake temperature is implemented with a first heat source and heating the substrate using a heating flash is implemented with a second heat source that is different than the first heat source.
3. The heat treatment process of claim 2 , wherein the second heat source comprises an arc lamp.
4. The heat treatment process of claim 1 , wherein the process comprises admitting an ambient gas into the processing chamber during the soak period.
5. The heat treatment process of claim 4 , wherein the ambient gas comprises nitrogen, argon, or helium.
6. The heat treatment process of claim 4 , wherein the ambient gas is at atmospheric pressure.
7. The heat treatment process of claim 4 , wherein the ambient gas is at a pressure below about 1 Torr.
8. The heat treatment process of claim 4 , wherein the ambient gas comprises one or more of hydrogen, deuterium, ammonia, or hydrazine species.
9. The heat treatment process of claim 1 , wherein the process comprises inducing a plasma to create chemically reducing species during the soak period.
10. The heat treatment process of claim 1 , wherein the process comprises creating species using UV light during the soak period.
11. The heat treatment process of claim 1 , wherein the second temperature increase rate is greater than about 10 4 ° C. per second.