Spatial monitoring and control of plasma processing environments
Systems and methods for plasma processing are disclosed. An exemplary system may include a plasma processing chamber including a source to produce a plasma in the processing chamber and at least two bias electrodes arranged within the plasma processing chamber to control plasma sheaths proximate to the bias electrodes. A chuck is disposed to support a substrate, and a source generator is coupled to the plasma electrode. At least one bias supply is coupled to the at least two bias electrodes, and a controller is included to control the at least one bias supply to control the plasma sheaths proximate to the bias electrodes.
1. A system for plasma processing, the system comprising:
a plasma processing chamber;
one or more excitation sources to provide a plasma in the processing chamber;
at least two separate electrical planes arranged within the plasma processing chamber to enable control of plasma sheaths proximate to the at least two separate electrical planes;
a chuck disposed to support a substrate;
at least one bias supply coupled to the at least two separate electrical planes, the at least one bias supply is configured to periodically apply a cycle of an asymmetric periodic voltage waveform to each of the electrical planes, and
at least one controller configured to:
obtain at least one ion current measurement, wherein the at least one ion current measurement is an indication of ion current proximate to a corresponding one of the separate electrical planes; and
control, in response to at least one ion current measurement, one or more mechanical features selected from the group consisting of magnets, pressure valves, mass flow controllers, and a physical geometry of the plasma processing chamber.
2. A system for plasma processing, the system comprising
a plasma processing chamber;
one or more excitation sources to provide a plasma in the processing chamber;
at least two separate electrical planes arranged within the plasma processing chamber to enable control of plasma sheaths proximate to the at least two separate electrical planes;
a chuck disposed to support a substrate;
at least one bias supply coupled to the at least two separate electrical planes, the at least one bias supply is configured to periodically apply a cycle of an asymmetric periodic voltage waveform to each of the electrical planes; and
at least one controller configured to:
obtain at least one ion current measurement, wherein the at least one ion current measurement is an indication of ion current proximate to a corresponding one of the separate electrical planes; and
control the one or more excitation sources based upon the at least one ion current measurement to control plasma density proximate to the corresponding one of the separate electrical planes.
3. The system of claim 1 , wherein the one or more excitation sources include a remote plasma source.
4. The system of claim 1 , wherein the one or more excitation sources include a source generator.
5. The system of claim 4 , wherein one of the one or more excitation sources and one of the bias supplies are coupled to a common electrode.
6. A non-transitory computer-readable medium comprising instructions stored thereon, for execution by a processor, or for configuring a field programmable gate array, to perform plasma processing, the instructions comprising instructions to:
periodically apply a cycle of an asymmetric periodic voltage waveform to each of two or more electrical planes arranged within a plasma processing chamber to enable control of plasma sheaths proximate to at least two separate electrical planes;
obtain ion current measurements, wherein the ion current measurements include ion current measurements corresponding to each of the separate electrical planes in a plasma processing chamber; and
control, in response to at least one ion current measurement, one or more mechanical features selected from the group consisting of magnets, pressure valves, mass flow controllers, and a physical geometry of the plasma processing chamber.
7. A non-transitory computer-readable medium comprising instructions stored thereon, for execution by a processor, or for configuring a field programmable gate array, to perform plasma processing, the instructions comprising instructions to:
periodically apply a cycle of an asymmetric periodic voltage waveform to each of two or more electrical planes arranged within a plasma processing chamber to enable control of plasma sheaths proximate to at least two separate electrical planes;
obtain ion current measurements, wherein the ion current measurements include ion current measurements corresponding to each of the separate electrical planes in a plasma processing chamber; and
control one or more excitation sources based upon the ion current measurements to control plasma density proximate to the separate electrical planes.
8. The non-transitory computer-readable medium of claim 7 wherein the instructions comprise instructions to control a remote plasma source.
9. The non-transitory computer-readable medium of claim 7 wherein the instructions comprise instructions to control a source generator.
10. A controller comprising:
monitoring circuitry to measure at least one characteristic of power that is applied by one or more bias supplies to at least two separate electrical planes in a plasma processing chamber;
a chamber analysis component configured to determine a characteristic of an environment within the plasma processing chamber based upon the measured characteristic of the power obtained from the monitoring circuitry wherein the characteristic of the environment within the plasma processing chamber is ion current proximate to one or more separate electrical planes that are coupled to the one or more bias supplies; and
control circuitry to adjust at least one electrical or mechanical feature of the plasma processing chamber based upon the at least one characteristic of power.
11. The controller of claim 10 , wherein the controller is configured to control one or more excitation sources based upon the characteristic of an environment within the plasma processing chamber.
12. The controller of claim 10 , wherein the control circuitry is configured to control one or more excitation sources based upon the ion current.
13. The controller of claim 12 , wherein the control circuitry is configured to control a remote plasma source based upon the ion current.
14. The controller of claim 12 , wherein the control circuitry is configured to control one or more magnets, pressure valves, mass flow controllers, or a physical geometry of the plasma processing chamber.
15. The controller of claim 12 , wherein the control circuitry is configured to control a source generator based upon the ion current.
16. The controller of claim 10 , wherein the chamber analysis component is configured to calculate a sheath capacitance of plasma sheaths proximate to the electrical planes, and the control circuitry is configured to adjust the at least one characteristic of the power applied to adjust the sheath capacitance.
17. The controller of claim 10 , wherein the controller includes at least one of an integrated controller that is integrated within one of the at least one of the bias supplies or a system controller that controls multiple components of the plasma processing chamber.