Metrics for asymmetric wafer shape characterization
Using data about the geometry of the wafer, the geometry of the wafer is measured along at least three diameters originating at different points along a circumference of the wafer. A characterization of the geometry of the wafer is determined using the three diameters. A probability of wafer clamping failure for the wafer can be determined based on the characterization.
1. A detection system comprising:
an imaging system configured to measure geometry of a wafer; and
a processor in electronic communication with the imaging system, wherein the processor is configured to:
obtain data about the geometry of the wafer;
measure the geometry of the wafer along at least three diameters originating at different points along a circumference of the wafer; and
determine a characterization of the geometry of the wafer using the three diameters.
2. The detection system of claim 1 , wherein the characterization includes a magnitude and direction of maximum shape change for the wafer across the three diameters.
3. The detection system of claim 1 , wherein the characterization includes an angular warp.
4. The detection system of claim 1 , wherein the characterization includes a peak point or a valley point.
5. The detection system of claim 1 , wherein the characterization includes curvature.
6. The detection system of claim 1 , wherein the processor is further configured to determine a probability of wafer clamping failure for the wafer based on the characterization.
7. The detection system of claim 1 , wherein the geometry is measured along at least thirty-two diameters.
8. The detection system of claim 1 , further comprising a chuck configured to hold the wafer.
9. A method comprising:
receiving data about the geometry of the wafer at a processor;
measuring, using the processor, the geometry of the wafer along at least three diameters originating at different points along a circumference of the wafer; and
determining, using the processor, a characterization of the geometry of the wafer using the three diameters.
10. The method of claim 9 , further comprising imaging the wafer with an imaging system.
11. The method of claim 9 , wherein the wafer is a 3D NAND wafer or a DRAM wafer.
12. The method of claim 9 , wherein the characterization includes a magnitude and direction of maximum shape change for the wafer across the three diameters.
13. The method of claim 9 , wherein the characterization includes an angular warp.
14. The method of claim 9 , wherein the characterization includes a peak point or a valley point.
15. The method of claim 9 , wherein the characterization includes curvature.
16. The method of claim 9 , further comprising determining, using the processor, a probability of wafer clamping failure for the wafer based on the characterization.
17. The method of claim 9 , wherein the geometry is measured along at least thirty-two diameters.
18. The method of claim 9 , wherein two of the three diameters are perpendicular to each other.
19. The method of claim 9 , wherein the data is for an entire surface of the wafer.
20. A non-transitory computer readable medium storing a program configured to instruct a processor to execute the method of claim 9 .