LED for plant illumination
A light-emitting diode includes a PN junction light-emitting portion over a substrate; wherein the PN junction light-emitting portion includes an alternating-layer structure of alternating a strained light-emitting layer and a barrier layer, wherein the strained light-emitting layer with a component formula of Ga X In (1-x) As Y1 P (1-Y) , 0<X<1 and 0<Y≤0.05, and the barrier layer has a component formula of (Al a Ga 1-A ) b In (1-b) P, 0.3≤a≤1 and 0<b<1; when a current of 350 mA flows through the PN junction light-emitting portion in forward direction, the light-emitting diode has an output power at least 202.2 mW.
1. A light-emitting diode, comprising:
a PN junction light-emitting portion;
wherein:
the PN junction light-emitting portion includes an alternating-layer structure of alternating a strained light-emitting layer and a barrier layer;
the strained light-emitting layer with a component formula of Ga X In (1-X) As Y1 P (1-Y) , 0<X<1 and 0<Y≤0.05, and the barrier layer has a component formula of (Al a Ga 1-A ) b In (1-b) P, 0.3≤a≤1 and 0≤b≤1; and
responsive to that a current of 350 mA flows through the PN junction light-emitting portion in a forward direction, the light-emitting diode is configured to have an output power at least 202.2 mW.
2. The light-emitting diode according to claim 1 , wherein the PN junction light-emitting portion emits a light suitable for plant illumination.
3. The light-emitting diode according to claim 2 , wherein the peak light-emitting wavelength of the strained light-emitting layer is 685.1-739.5 nm.
4. The light-emitting diode according to claim 1 , wherein the PN junction light-emitting portion includes 2-40 pairs of the alternating-layer structure.
5. The light-emitting diode according to claim 4 , wherein each alternating-layer structure has a thickness of 5-100 nm.
6. The light-emitting diode according to claim 4 , wherein the alternating-layer structure has a total thickness ranging from 240 nm to 450 nm.
7. The light-emitting diode according to claim 1 , wherein the PN junction light-emitting portion includes 6˜9 pairs of the alternating-layer structure, and the As component of the strained light-emitting layer has a molar content Y1 ranges from 0.01 to 0.05.
8. The light-emitting diode according to claim 1 , wherein the As component of the strained light-emitting layer has a molar content Y1 ranges from 0.025 to 0.05 such that the PN junction light-emitting portion having a peak light-emitting wavelength of 700-750 nm.
9. The light-emitting diode according to claim 1 , wherein the As component of the strained light-emitting layer has a molar content Y1 ranges from 0.04 to 0.05, and each alternating-layer structure has a thickness of 40-60 nm.
10. The light-emitting diode according to claim 1 , wherein the As component of the strained light-emitting layer has a molar content Y1 ranges from 0.01 to 0.025, and the alternating-layer structure has a total thickness ranges from 240 nm to 360 nm, when a current of 350 mA flows through the PN junction light-emitting portion in forward direction, the light-emitting diode has a output power at least 232.7 mW.
11. The light-emitting diode according to claim 1 , wherein the As component of the strained light-emitting layer has a molar content Y1 ranges from 0.01 to 0.04, and the peak light-emitting wavelength of the strained light-emitting layer is 722.0-739.5 nm, when a current of 350 mA flows through the PN junction light-emitting portion in forward direction, the light-emitting diode has a output power at least 216.5 mW.
12. A light-emitting system, comprising a plurality of light-emitting diode chips, each chip comprising: a PN junction light-emitting portion; wherein: the PN junction light-emitting portion includes an alternating-layer structure of alternating a strained light-emitting layer and a barrier layer; the strained light-emitting layer with a component formula of G aX In (1-X) As Y1 P (1-Y) , 0<X<1 and 0<Y≤0.05, and the barrier layer has a component formula of (Al a Ga 1-A ) b In (1-b) P, 0.3≤a≤1 and 0<b<1; and responsive to a current of 350 mA flows through the PN junction light-emitting portion in forward direction, the light-emitting diode is configured to have an output power at least 202.2 mW.
13. The light-emitting system according to claim 12 , wherein the PN junction light-emitting portion includes 2-40 pairs of the alternating-layer structure.
14. The light-emitting system according to claim 13 , wherein each alternating-layer structure has a thickness of 5-100 nm.
15. The light-emitting system according to claim 12 , wherein the alternating-layer structure has a total thickness ranging from 240 nm to 450 nm.
16. The light-emitting system according to claim 12 , wherein the PN junction light-emitting portion includes 6-9 pairs of the alternating-layer structure, and the As component of the strained light-emitting layer has a molar content Y1 ranging from 0.01 to 0.05.
17. The light-emitting system according to claim 12 , wherein the As component of the strained light-emitting layer has a molar content Y1 ranges from 0.025 to 0.05 such that the PN junction light-emitting portion having a peak light-emitting wavelength of 700-750 nm.
18. The light-emitting system according to claim 12 , wherein the As component of the strained light-emitting layer has a molar content Y1 ranges from 0.04 to 0.05, and each alternating-layer structure has a thickness of 40-60 nm.
19. The light-emitting system according to claim 12 , wherein the peak light-emitting wavelength of the strained light-emitting layer is 685.1-739.5 nm.