Semiconductor nanoparticles and method of producing semiconductor nanoparticles
A method of producing semiconductor nanoparticles is provided. The method includes heating primary semiconductor nanoparticles and a salt of an element M 1 in a solvent at a temperature set in a range of 100° C. to 300° C. The primary semiconductor nanoparticles contain the element M 1 , an element M 2 , optionally an element M 3 , and an element Z, and have an average particle size of 50 nm or less. The element M 1 is at least one element selected from the group consisting of Ag, Cu, and Au. The element M 2 is at least one element selected from the group consisting of Al, Ga, In, and Tl. The element M 3 is at least one element selected from the group consisting of Zn and Cd. The element Z is at least one element selected from the group consisting of S, Se, and Te.
1. Semiconductor nanoparticles comprising:
an element M 1 ,
an element M 2 ,
and
an element Z, wherein
the semiconductor nanoparticles have an average particle size of 50 nm or less, the element M 1 is Ag,
the element M 2 is at least one element selected from the group consisting of Al, Ga, In, and Tl,
the element Z is at least one element selected from the group consisting of S, Se, and Te,
a ratio (M 1 /M 2 ) of the number of atoms of the element M 1 to the number of atoms of the element M 2 is 0.990 or greater and 0.995 or less, or 1.050 or greater and 1.089 or less, and
the semiconductor nanoparticles emit fluorescence having a fluorescence lifetime of 200 ns or less by irradiation with light at a wavelength in a range of 350 nm to 1,000 nm,
wherein the semiconductor nanoparticles further comprises an element M 3 and the element M 3 is at least one element selected from the group consisting of Zn and Cd, And
wherein part of the element M 3 is substituted with at least one element selected from the group consisting of Co, Ni, Pd, Sr, Ba, Fe, Cr, Mn, Cu, Cd, Rh, W, Ru, Pb, Sn, Mg, and Ca,
wherein particles comprising the semiconductor nanoparticles, and
one or more coating layers represented by the general formula M 3 ′Z′ on surfaces of the semiconductor nanoparticles, wherein
M 3 ′ is at least one element selected from the group consisting of Zn and Cd, and
Z′ is at least one element selected from the group consisting of S, Se, and Te.
2. The semiconductor nanoparticles according to claim 1 , wherein the element M 2 is In, and the element Z is S.
3. The semiconductor nanoparticles according to claim 1 , wherein a full width at half maximum of the fluorescence is 150 nm or less.
4. The semiconductor nanoparticles according to claim 1 , wherein an absorption spectrum of the semiconductor nanoparticles exhibits an exciton peak.
5. The semiconductor nanoparticles according to claim 4 , wherein the exciton peak is at a wavelength in a range of 350 nm to 1,000 nm.
6. The semiconductor nanoparticles according to claim 1 , wherein part of the element M 2 is substituted with at least one element selected from Cr, Fe, Al, Y, Sc, La, V, Mn, Co, Ni, Ga, In, Rh, Ru, Mo, Nb, W, Bi, As, and Sb.
7. A light-emitting device comprising a light conversion member and a semiconductor light-emitting element, wherein the light conversion member contains the semiconductor nanoparticles according to claim 1 .
8. The light-emitting device according to claim 7 , wherein the semiconductor light-emitting element is a light-emitting diode (LED) chip.
9. A liquid crystal display device comprising the light-emitting device according to claim 7 as a light source.
10. The semiconductor nanoparticles according to claim 1 , wherein the element M 3 is Zn.