Multiple waveguide coupling to one or more photodetectors
Structures for a photodetector and methods of fabricating a structure for a photodetector. A photodetector may have a light-absorbing layer comprised of germanium. A waveguide core may be coupled to the light-absorbing layer. The waveguide core may be comprised of a dielectric material, such as silicon nitride. Another waveguide core, which may be comprised of a different material such as single-crystal silicon, may be coupled to the light-absorbing layer.
1. A structure comprising:
a first photodetector including a first light-absorbing layer comprised of germanium; and
a first waveguide core coupled to the first light-absorbing layer, the first waveguide core comprising a dielectric material,
wherein the first light-absorbing layer includes a top surface, a first side surface, and a second side surface, the first waveguide core laterally overlaps with the first side surface, the first waveguide core laterally overlaps with the second side surface, and the first waveguide core is positioned on the top surface of the first light-absorbing layer.
2. The structure of claim 1 wherein the first light-absorbing layer includes a third side surface, the first side surface and the second side surface are aligned transverse to the third side surface, and the first waveguide core extends across the third side surface of the first light-absorbing layer to the top surface of the first light-absorbing layer.
3. The structure of claim 1 further comprising:
a second photodetector including a second light-absorbing layer comprised of germanium; and
a second waveguide core coupled to the second light-absorbing layer, the second waveguide core comprised of single-crystal silicon,
wherein the first photodetector, the first waveguide core, the second photodetector, and the second waveguide core are located on a photonics chip.
4. The structure of claim 3 wherein the dielectric material of the first waveguide core is silicon nitride.
5. The structure of claim 3 wherein the first photodetector includes a first pad comprised of single-crystal silicon, a first anode in the first pad, and a first cathode in the first pad, the first pad has a top surface, and the first light-absorbing layer is positioned on the top surface of the first pad.
6. The structure of claim 5 wherein the second photodetector includes a second pad comprised of single-crystal silicon, a second anode in the second pad, and a second cathode in the second pad, the second pad has a top surface, and the second light-absorbing layer is positioned on the top surface of the second pad.
7. The structure of claim 1 wherein the first photodetector includes a pad comprised of single-crystal silicon, an anode in the pad, and a cathode in the pad, the pad has a top surface, and the first light-absorbing layer is positioned on the top surface of the pad.
8. The structure of claim 7 wherein the first light-absorbing layer includes a third side surface, the first side surface and the second side surface are aligned transverse to the third side surface, the third side surface is inclined at an acute angle relative to the top surface of the pad, and the first waveguide core extends across the third side surface of the first light-absorbing layer.
9. The structure of claim 7 wherein the dielectric material of the first waveguide core is silicon nitride.
10. A structure comprising:
a photodetector including a light-absorbing layer comprised of germanium;
a first waveguide core coupled to the light-absorbing layer, the first waveguide core comprising a dielectric material; and
a second waveguide core coupled to the light-absorbing layer,
wherein the light-absorbing layer includes a first side surface and a second side surface opposite to the first side surface, the first waveguide core extends across the first side surface of the light-absorbing layer, and the second waveguide core is coupled to the light-absorbing layer at the first side surface.
11. The structure of claim 10 wherein the dielectric material of the first waveguide core is silicon nitride, and the second waveguide core comprises single-crystal silicon.
12. The structure of claim 10 wherein the first waveguide core extends along a longitudinal axis, and the first waveguide core intersects the first side surface of the first light-absorbing layer at an acute angle or an obtuse angle.
13. The structure of claim 10 further comprising:
a first source configured to supply first laser light of transverse electric mode that is guided by the first waveguide core to the light-absorbing layer; and
a second source configured to supply second laser light of transverse magnetic mode that is guided by the second waveguide core to the light-absorbing layer.
14. The structure of claim 10 further comprising:
a first source configured to supply first laser light of transverse magnetic mode that is guided by the first waveguide core to the light-absorbing layer; and
a second source configured to supply second laser light of transverse electric mode that is guided by the second waveguide core to the light-absorbing layer.
15. The structure of claim 10 wherein the photodetector includes a pad comprised of single-crystal silicon, an anode in the pad, and a cathode in the pad, the pad has a top surface, and the light-absorbing layer is positioned on the top surface of the pad.
16. A structure comprising:
a photodetector including a light-absorbing layer comprised of germanium;
a first waveguide core coupled to the light-absorbing layer, the first waveguide core comprising a dielectric material; and
a second waveguide core coupled to the light-absorbing layer,
wherein the light-absorbing layer includes a first side surface and a second side surface opposite to the first side surface, the first waveguide core extends across the second side surface of the light-absorbing layer, and the second waveguide core is coupled to the light-absorbing layer at the first side surface of the light-absorbing layer.
17. The structure of claim 16 further comprising:
a first source configured to supply first laser light of transverse electric mode that is guided by the first waveguide core to the light-absorbing layer; and
a second source configured to supply second laser light of transverse magnetic mode that is guided by the second waveguide core to the light-absorbing layer.
18. The structure of claim 16 further comprising:
a first source configured to supply laser light of transverse magnetic mode that is guided by the first waveguide core to the light-absorbing layer; and
a second source configured to supply second laser light of transverse electric mode that is guided by the second waveguide core to the light-absorbing layer.
19. The structure of claim 16 wherein the photodetector includes a pad comprised of single-crystal silicon, an anode in the pad, and a cathode in the pad, the pad has a top surface, and the light-absorbing layer is positioned on the top surface of the pad.
20. The structure of claim 16 wherein the dielectric material of the first waveguide core is silicon nitride, and the second waveguide core comprises single-crystal silicon.