Photodetectors with a light-absorbing layer at least partially wrapped about a waveguide core
Structures including a photodetector and methods of forming a structure including a photodetector. The structure comprises a semiconductor layer comprising a crystalline semiconductor material, a waveguide core including a first sidewall and a second sidewall, and a photodetector including a light-absorbing layer, an anode, and a cathode. The light-absorbing layer includes a first portion and a second portion that are disposed on the semiconductor layer. The first portion of the light-absorbing layer is adjacent to the first sidewall of the waveguide core, and the second portion of the light-absorbing layer is adjacent to the second sidewall of the waveguide core.
1 . A structure comprising:
a semiconductor layer comprising a crystalline semiconductor material;
a waveguide core including a first sidewall and a second sidewall, the waveguide core comprising a first dielectric material;
a photodetector including a light-absorbing layer, an anode including a first doped region in a first portion of the semiconductor layer, and a cathode including a second doped region in a second portion of the semiconductor layer, the light-absorbing layer including a first portion and a second portion that are disposed on the semiconductor layer, the first portion of the light-absorbing layer adjacent to the first sidewall of the waveguide core, and the second portion of the light-absorbing layer adjacent to the second sidewall of the waveguide core; and
a dielectric layer including a first portion and a second portion, the dielectric layer comprising a second dielectric material having a lower refractive index than the first dielectric material, the first portion of the dielectric layer disposed between the first sidewall of the waveguide core and the first portion of the light-absorbing layer, and the second portion of the dielectric layer disposed between the second sidewall of the waveguide core and the second portion of the light-absorbing layer.
2 . The structure of claim 1 wherein the waveguide core includes a top surface, and the light-absorbing layer includes a third portion over the top surface of the waveguide core.
3 . The structure of claim 2 wherein the third portion of the light-absorbing layer extends across the top surface of a portion of the waveguide core to connect the first portion of the light-absorbing layer to the second portion of the light-absorbing layer.
4 . The structure of claim 1 wherein the light-absorbing layer comprises germanium, and the first dielectric material comprises silicon nitride.
5 . The structure of claim 1 wherein the light-absorbing layer comprises intrinsic germanium, and the first dielectric material comprises silicon nitride.
6 . The structure of claim 1 wherein the first portion of the light-absorbing layer adjoins a first portion of the semiconductor layer adjacent to the first sidewall, and the second portion of the light-absorbing layer adjoins a second portion of the semiconductor layer adjacent to the second sidewall.
7 . The structure of claim 6 wherein the first portion of the semiconductor layer includes the first doped region, and the second portion of the semiconductor layer includes the second doped region.
8 . The structure of claim 1 wherein the first doped region and the second doped region have opposite conductivity types.
9 . The structure of claim 1 wherein the waveguide core has a top surface, the first portion of the light-absorbing layer extends from the semiconductor layer to the top surface of the waveguide core, and the second portion of the light-absorbing layer extends from the semiconductor layer to the top surface of the waveguide core.
10 . The structure of claim 1 further comprising:
a cavity in the semiconductor layer; and
a first dielectric layer in the cavity,
wherein the waveguide core is disposed on the first dielectric layer.
11 . The structure of claim 10 wherein the cavity extends partially through the semiconductor layer.
12 . The structure of claim 10 further comprising:
a second dielectric layer,
wherein the semiconductor layer is disposed on the second dielectric layer, and the cavity extends fully through the semiconductor layer to the second dielectric layer.
13 . The structure of claim 1 wherein the waveguide core includes a tapered section, and the light-absorbing layer overlaps with the tapered section of the waveguide core.
14 . A method comprising:
forming an anode of a photodetector, wherein the anode includes a first doped region in a first portion of a semiconductor layer;
forming a cathode of the photodetector, wherein the cathode includes a second doped region in a second portion of the semiconductor layer;
forming a waveguide core that includes a first sidewall and a second sidewall, wherein the waveguide core comprises a first dielectric material;
forming a light-absorbing layer of the photodetector, wherein the light-absorbing layer includes a first portion and a second portion that are disposed on the semiconductor layer, the semiconductor layer comprises a crystalline semiconductor material, the first portion of the light-absorbing layer is adjacent to the first sidewall of the waveguide core, and the second portion of the light-absorbing layer is adjacent to the second sidewall of the waveguide core; and
forming a dielectric layer including a first portion and a second portion, wherein the dielectric layer comprises a second dielectric material having a lower refractive index than the first dielectric material, the first portion of the dielectric layer is disposed between the first sidewall of the waveguide core and the first portion of the light-absorbing layer, and the second portion of the dielectric layer is disposed between the second sidewall of the waveguide core and the second portion of the light-absorbing layer.
15 . The method of claim 14 wherein the first portion and the second portion of the light-absorbing layer are epitaxially grown from the semiconductor layer.
16 . The structure of claim 1 wherein the first dielectric material comprises silicon nitride, silicon oxynitride, aluminum nitride, or aluminum oxide.
17 . The structure of claim 16 wherein the second dielectric material comprises silicon dioxide.
18 . The structure of claim 1 wherein the second dielectric material comprises silicon dioxide.
19 . The structure of claim 10 wherein the semiconductor layer has a top surface, the first dielectric layer is thicker than the semiconductor layer, and the waveguide core is elevated above the top surface.
20 . The method of claim 14 wherein the first dielectric material comprises silicon nitride, silicon oxynitride, aluminum nitride, or aluminum oxide, and the second dielectric material comprises silicon dioxide.