Semiconductor detectors with butt-end coupled waveguide and method of forming the same
The present disclosure generally relates to semiconductor detectors for use in optoelectronic/photonic devices and integrated circuit (IC) chips, and methods for forming same. The present disclosure also relates to photodetectors integrated with waveguide stacks, more particularly, photodetectors with butt-end coupled waveguides. The present disclosure also relates to methods of forming such structures.
1. A semiconductor device comprising:
a substrate;
a semiconductor layer having a waveguide section and an adjoining active section above the substrate;
a semiconductor detector disposed on the active section of the semiconductor layer, the semiconductor detector having a front facet;
a dielectric layer disposed over the semiconductor detector; and
a waveguide structure above the waveguide section of the semiconductor layer and adjacent to the semiconductor detector, the waveguide structure having an end facet that faces the front facet of the semiconductor detector;
wherein the dielectric layer is between the end facet of the waveguide structure and the front facet of the semiconductor detector.
2. The device of claim 1 , further comprising the dielectric layer extending between the waveguide section of the semiconductor layer and the waveguide structure.
3. The device of claim 1 , further comprising the waveguide structure having side facets that taper away from each other as they meet the end facet of the waveguide structure.
4. The device of claim 1 , further comprising the waveguide section of the semiconductor layer has side facets that taper away from each other as they meet the active section of the semiconductor layer.
5. The device of claim 1 , wherein the waveguide structure is a semiconductor material or a dielectric material.
6. The device of claim 1 , wherein the waveguide structure is a first waveguide structure and further comprising a second waveguide structure vertically stacked above the first waveguide structure.
7. The device of claim 1 , further comprising a cladding structure disposed above the waveguide structure and the dielectric layer.
8. A semiconductor device comprising:
a substrate;
a semiconductor layer having a waveguide section and an adjoining active section above the substrate;
a semiconductor detector disposed on the active section of the semiconductor layer;
a dielectric layer disposed over the semiconductor detector; and
a plurality of waveguide structures that are vertically stacked above the waveguide section of the semiconductor layer and adjacent to the semiconductor detector, wherein the dielectric layer extends above the waveguide section of the semiconductor layer and in between a pair of waveguide structures in the vertical stack.
9. The device of claim 8 , wherein the vertically stacked waveguide structures further comprising semiconductor waveguide structures or dielectric waveguide structures, or a combination thereof.
10. The device of claim 8 , wherein the vertically stacked waveguide structures increase in size as they cascade towards the waveguide section of the semiconductor layer.
11. The device of claim 8 , wherein the semiconductor detector has a front facet that is facing end facets of the vertically stacked waveguide structures.
12. The device of claim 11 , wherein the plurality of vertically stacked waveguide structures further comprising at least one waveguide structure having side facets that taper away from each other as they meet the end facets of the vertically stacked waveguide structures.
13. The device of claim 8 , wherein the vertically stacked waveguide structures have substantially identical sizes.
14. The device of claim 7 , wherein the waveguide structure is embedded within the cladding structure.
15. The device of claim 1 , further comprising a dielectric liner disposed on the semiconductor detector and the dielectric layer being disposed on the dielectric liner, wherein the dielectric liner is between the end facet of the waveguide structure and the front facet of the semiconductor detector.
16. The device of claim 15 , wherein the dielectric liner and the dielectric layer extend between the waveguide section of the semiconductor layer and the waveguide structure.
17. A semiconductor device comprising:
a substrate;
a semiconductor layer having a waveguide section and an adjoining active section above the substrate;
a semiconductor detector disposed on the active section of the semiconductor layer;
a dielectric layer disposed over the semiconductor detector; and
a plurality of waveguide structures that are vertically stacked above the waveguide section of the semiconductor layer and adjacent to the semiconductor detector, wherein the dielectric layer extends to lie between the waveguide section of the semiconductor layer and the vertically stacked waveguide structures.
18. The device of claim 17 , further comprising a cladding structure disposed above the dielectric layer, wherein the vertically stacked waveguide structures are embedded in the cladding structure and each waveguide structure is separated by cladding layers within the cladding structure.
19. The device of claim 18 , wherein the vertically stacked waveguide structures increase in size as they cascade towards the waveguide section of the semiconductor layer.
20. The device of claim 19 , wherein the semiconductor detector has a front facet that is facing end facets of the vertically stacked waveguide structures, and the plurality of vertically stacked waveguide structures further comprising at least one waveguide structure having side facets that taper away from each other as they meet the end facets of the vertically stacked waveguide structures.