Photonic integrated circuit with encapsulated reference arm

1. A photonic integrated circuit (PIC) for interferometric sensor comprising:

a bottom layer called substrate;

a first coupling means suitable for coupling an incident light radiation (L in ) to the photonic integrated circuit (PIC);

a directional splitter linked to the first coupling means and configured to split the light radiation (L in ) coupled by the first coupling means to at least one pair of waveguides included in the photonic integrated circuit, each pair of waveguides comprising:

a first waveguide called sensitive arm wherein a first portion of the light radiation is propagated, said sensitive arm being exposed to a first ambient medium (M 1 ) and to at least one compound to be detected (C) inducing a modification of the local refractive index perceived by the evanescent part of the electromagnetic field of the first portion of the light radiation, and

a second waveguide called reference arm wherein a second portion of the light radiation is propagated,

an encapsulation layer encapsulating the reference arm, said encapsulation layer being impermeable to the compound or compounds to be detected (C), so that the reference arm is exposed only to a second ambient medium (M 2 ), substantially of the same nature as the first ambient medium (M 1 ) and without said compound to be detected,

a directional combiner combining the first portion of the light radiation from said reference arm, called first transmitted portion, and the second portion of the light radiation from said sensitive arm, called second transmitted portion, to form a transmitted radiation;

a second coupling means suitable for coupling said transmitted radiation to a medium external to the photonic integrated circuit (PIC);

a top layer called superstrate covering at least the first and the second coupling means, the directional splitter and the directional combiner and not covering the sensitive arm and the reference arm, said encapsulation layer being deposited on top of the superstrate.

2. The photonic integrated circuit according to claim 1 , wherein the sensitive arm and reference arm are spiral-form waveguides.

3. The photonic integrated circuit according to claim 1 , comprising a so-called functionalization layer at least partially covering the sensitive arm and suitable for adsorbing one of the compounds to be detected.

4. The photonic integrated circuit according to claim 3 , comprising a so-called compensation layer at least partially covering the reference arm, a thickness of the compensation layer being equal to or greater than that of the functionalization layer before adsorption of said compound to be detected.

5. The photonic integrated circuit according to claim 1 , wherein the encapsulation layer is porous to the first ambient medium so as to allow a regulation of the relative humidity or of the osmotic pressure of the second ambient medium (M 2 ) relative to the first ambient medium (M 1 ).

6. The photonic integrated circuit according to claim 1 , wherein the encapsulation layer is made of glass, or silicon, polymer or metal.

7. The photonic integrated circuit according to claim 1 , wherein the encapsulation layer is a deformable membrane.

8. The photonic integrated circuit according to claim 1 , wherein an assembly formed by said directional splitter, said reference arm, said encapsulation layer, said sensitive arm and said directional combiner is called interferometric assembly, said photonic integrated circuit comprising a plurality of said interferometric assemblies, at least one additional directional splitter configured to split the light radiation coupled by the first coupling means to a plurality of interferometric assemblies, and a plurality of second coupling means, each suitable for coupling the radiation transmitted by a different interferometric assembly to a medium external to the photonic integrated circuit (PIC).

9. The photonic integrated circuit according to claim 8 , wherein the sensitive arm of each interferometric assembly comprises a so-called functionalization layer at least partially covering the sensitive arm and suitable for adsorbing one of the components to be detected, each functionalization layer being suitable for adsorbing a compound to be detected different from those adsorbed by the other functionalization layers covering the sensitive arm of the other interferometric assemblies.

10. The photonic integrated circuit according to claim 8 , wherein the reference arm of each interferometric assembly is individually encapsulated.

11. The photonic integrated circuit according to claim 10 , wherein the thickness of the individual encapsulation layer is less than 500 microns.

12. The photonic integrated circuit according to claim 8 , wherein the reference arms of the interferometric assemblies are collectively encapsulated, so as to form an encapsulation layer that is uniform and without discontinuity.

13. The photonic integrated circuit according to claim 12 , wherein the thickness of the uniform encapsulation layer is between 5 and 2000 microns.

14. An interferometric sensor comprising:

a laser source configured to emit an incident light radiation (L in );

a photonic integrated circuit according to claim 1 ;

an optical detection system suitable for detecting a light radiation (L out ) from the second coupling means and generating a signal (S) representative of the trend over time of the detected light intensity;

a processing unit for processing said signal, suitable for determining, from the detected intensity, the trend over time of the phase-shift between the first transmitted portion and the second transmitted portion.