Solid-state imaging device, method of manufacturing the same, and electronic apparatus
A solid state imaging device that includes a substrate having oppositely facing first and second surfaces and a photoelectric conversion unit layer having a light incident side facing away from the substrate. The substrate includes a first photoelectric conversion unit and a second photoelectric conversion and the photoelectric conversion layer includes a third photoelectric conversion unit.
1. A solid-state imaging device comprising:
a semiconductor substrate having a first surface at a light incident side of the semiconductor substrate and a second surface opposite to the first surface;
an organic photoelectric conversion unit above the first surface of the semiconductor substrate, the organic photoelectric conversion unit including an organic photoelectric conversion layer between an upper electrode and a lower electrode, wherein the organic photoelectric conversion unit converts light;
a photoelectric conversion unit in the semiconductor substrate; and
two or more wiring layers disposed below the second surface of the semiconductor substrate, wherein an insulating layer having negative fixed charges is between the organic photoelectric conversion unit and the semiconductor substrate.
2. The solid-state imaging device according to claim 1 , further comprising:
a first transfer transistor corresponding to the organic photoelectric conversion unit; and
a second transfer transistor corresponding to the photoelectric conversion unit, wherein the first transfer transistor is formed above the first surface of the semiconductor substrate, and wherein the second transfer transistor is formed on the second surface of the semiconductor substrate.
3. The solid-state imaging device according to claim 1 , further comprising:
a first transfer transistor corresponding to the organic photoelectric conversion unit; and
a second transfer transistor corresponding to the photoelectric conversion unit, wherein the first transfer transistor and the second transfer transistor are formed on the second surface of the semiconductor substrate.
4. The solid-state imaging device according to claim 1 , further comprising:
a first reset transistor corresponding to the organic photoelectric conversion unit; and
a second reset transistor corresponding to the photoelectric conversion unit, wherein the first reset transistor and the second reset transistor are formed on the second surface of the semiconductor substrate.
5. The solid-state imaging device according to claim 1 , further comprising:
a first amplification transistor corresponding to the organic photoelectric conversion unit; and
a second amplification transistor corresponding to the photoelectric conversion unit, wherein the first amplification transistor and the second amplification transistor are formed on the second surface of the semiconductor substrate.
6. The solid-state imaging device according to claim 1 , further comprising:
a conductive plug formed through the semiconductor substrate.
7. The solid-state imaging device according to claim 6 , wherein the conductive plug is electrically connected to the lower electrode.
8. The solid-state imaging device according to claim 1 , wherein the lower electrode is insulated from another lower electrode of an adjacent pixel, and wherein the upper electrode extends to the adjacent pixel.
9. The solid-state imaging device according to claim 1 , wherein a signal charge in the organic photoelectric conversion unit is transferred therefrom via the lower electrode.
10. The solid-state imaging device according to claim 1 , wherein the insulating layer is made of HfO 2 .
11. The solid-state imaging device according to claim 1 , further comprising:
a semiconductor film above the first surface of the semiconductor substrate, wherein a charge converted by the organic photoelectric conversion layer is accumulated at a part of the semiconductor film.
12. The solid-state imaging device according to claim 11 , wherein the semiconductor film includes an oxide semiconductor.
13. The solid-state imaging device according to claim 12 , wherein the semiconductor film includes at least one of zinc (Zn) and Tin (Sn).
14. The solid-state imaging device according to claim 11 , further comprising:
a conductive plug formed through the semiconductor substrate, wherein the semiconductor film is electrically connected to a gate electrode of an amplification transistor disposed at the second surface of the semiconductor substrate via the conductive plug.
15. An electronic apparatus comprising:
an optical system;
a solid-state imaging device; and
a signal processing circuit processing an output signal of the solid-state imaging device, wherein the solid-state imaging device comprises:
a semiconductor substrate having a first surface at a light incident side of the semiconductor substrate and a second surface opposite to the first surface;
an organic photoelectric conversion unit above the first surface of the semiconductor substrate, the organic photoelectric conversion unit including an organic photoelectric conversion layer between an upper electrode and a lower electrode, wherein the organic photoelectric conversion unit converts light;
a photoelectric conversion unit in the semiconductor substrate; and
two or more wiring layers disposed below the second surface of the semiconductor substrate, wherein an insulating layer having negative fixed charges is between the organic photoelectric conversion unit and the semiconductor substrate.
16. A solid-state imaging device comprising:
a semiconductor substrate having a first surface at a light incident side of the semiconductor substrate and a second surface opposite to the first surface;
an organic photoelectric conversion unit above the first surface of the semiconductor substrate, the organic photoelectric conversion unit including an organic photoelectric conversion layer between an upper electrode and a lower electrode, wherein the organic photoelectric conversion unit converts light;
a photoelectric conversion unit in the semiconductor substrate; and
two or more wiring layers disposed below the second surface of the semiconductor substrate, wherein an insulating layer configured to enhance a hole accumulation state in the semiconductor substrate is between the organic photoelectric conversion unit and the semiconductor substrate.
17. The solid-state imaging device according to claim 16 , further comprising:
a first transfer transistor corresponding to the organic photoelectric conversion unit; and
a second transfer transistor corresponding to the photoelectric conversion unit, wherein the first transfer transistor is formed above the first surface of the semiconductor substrate, and wherein the second transfer transistor is formed on the second surface of the semiconductor substrate.
18. The solid-state imaging device according to claim 16 , further comprising:
a first transfer transistor corresponding to the organic photoelectric conversion unit; and
a second transfer transistor corresponding to the photoelectric conversion unit, wherein the first transfer transistor and the second transfer transistor are formed on the second surface of the semiconductor substrate.
19. The solid-state imaging device according to claim 16 , further comprising:
a first reset transistor corresponding to the organic photoelectric conversion unit; and
a second reset transistor corresponding to the photoelectric conversion unit, wherein the first reset transistor and the second reset transistor are formed on the second surface of the semiconductor substrate.
20. The solid-state imaging device according to claim 16 , further comprising:
a first amplification transistor corresponding to the organic photoelectric conversion unit; and
a second amplification transistor corresponding to the photoelectric conversion unit, wherein the first amplification transistor and the second amplification transistor are formed on the second surface of the semiconductor substrate.
21. The solid-state imaging device according to claim 16 , further comprising:
a conductive plug formed through the semiconductor substrate.
22. The solid-state imaging device according to claim 21 , wherein the conductive plug is electrically connected to the lower electrode.
23. The solid-state imaging device according to claim 16 , wherein the lower electrode is insulated from another lower electrode of an adjacent pixel, and wherein the upper electrode extends to the adjacent pixel.
24. The solid-state imaging device according to claim 16 , wherein a signal charge in the organic photoelectric conversion unit is transferred therefrom via the lower electrode.
25. The solid-state imaging device according to claim 16 , wherein the insulating layer is made of HfO 2 .
26. The solid-state imaging device according to claim 16 , further comprising:
a semiconductor film above the first surface of the semiconductor substrate, wherein a charge converted by the organic photoelectric conversion layer is accumulated at a part of the semiconductor film.
27. The solid-state imaging device according to claim 26 , wherein the semiconductor film includes an oxide semiconductor.
28. The solid-state imaging device according to claim 27 , wherein the semiconductor film includes at least one of zinc (Zn) and Tin (Sn).
29. The solid-state imaging device according to claim 26 , further comprising:
a conductive plug formed through the semiconductor substrate, wherein the semiconductor film is electrically connected to a gate electrode of an amplification transistor disposed at the second surface of the semiconductor substrate via the conductive plug.
30. An electronic apparatus comprising:
an optical system;
a solid-state imaging device; and
a signal processing circuit processing an output signal of the solid-state imaging device, wherein the solid-state imaging device comprises:
a semiconductor substrate having a first surface at a light incident side of the semiconductor substrate and a second surface opposite to the first surface;
an organic photoelectric conversion unit above the first surface of the semiconductor substrate, the organic photoelectric conversion unit including an organic photoelectric conversion layer between an upper electrode and a lower electrode, wherein the organic photoelectric conversion unit converts light;
a photoelectric conversion unit in the semiconductor substrate; and
two or more wiring layers disposed below the second surface of the semiconductor substrate, wherein an insulating layer configured to enhance a hole accumulation state in the semiconductor substrate is between the organic photoelectric conversion unit and the semiconductor substrate.