Semiconductor devices and methods of manufacturing semiconductor devices
In one example, a semiconductor device comprises a first base substrate comprising a first base conductive structure, a first encapsulant contacting a lateral side of the first base substrate, a redistribution structure (RDS) substrate over the base substrate and comprising an RDS conductive structure coupled with the first base conductive structure, a first electronic component over the RDS substrate and over a first component terminal coupled with the RDS conductive structure, and a second encapsulant over the RDS substrate and contacting a lateral side of the first electronic component. Other examples and related methods are also disclosed herein.
1. A semiconductor device, comprising:
a first base substrate comprising a first base conductive structure;
a first encapsulant contacting a lateral side of the first base substrate;
a redistribution structure (RDS) substrate over the first base substrate and comprising an RDS conductive structure coupled with the first base conductive structure;
a first electronic component over the RDS substrate and over a first component terminal coupled with the RDS conductive structure;
a second encapsulant over the RDS substrate and contacting a lateral side of the first electronic component;
wherein the first base substrate comprises:
a base dielectric structure; and
an embedded electrical component in the base dielectric structure;
a second electronic component over the RDS substrate and over a second component terminal coupled with the RDS conductive structure; and
a second base substrate laterally adjacent to the first base substrate and comprising a second base conductive structure;
wherein the first encapsulant contacts a lateral side of the second base substrate; and
wherein the second electronic component is coupled over the second base substrate.
2. The semiconductor device of claim 1 , wherein:
the first encapsulant further contacts a top side of the first base substrate.
3. The semiconductor device of claim 1 , wherein the first base substrate comprises a coreless substrate.
4. The semiconductor device of claim 1 , wherein the second electronic component also is coupled over the first base substrate.
5. The semiconductor device of claim 4 , further comprising:
a third electronic component over the RDS substrate and over a third component terminal coupled with the RDS conductive structure;
wherein the third electronic component is coupled over the second base substrate.
6. The semiconductor device of claim 1 , wherein the RDS substrate covers an entire top side of the first base substrate.
7. A semiconductor device, comprising:
a first base substrate;
a first encapsulant contacting a lateral side of the first base substrate;
a redistribution structure (RDS) substrate over the first base substrate and comprising an RDS conductive structure;
a first electronic component over the RDS substrate and over a first component terminal coupled with the RDS conductive structure;
a second electronic component over the RDS substrate and over a second component terminal coupled with the RDS conductive structure;
a second encapsulant over the RDS conductive structure and contacting a lateral side of the first electronic component and the second electronic component; and
a second base substrate;
wherein the first base substrate comprises a first base conductive structure coupled with an additional first component terminal; and
wherein the second base substrate comprises a second base conductive structure coupled with an additional second component terminal.
8. The semiconductor device of claim 7 , wherein
a bottom side of the RDS substrate lacks RDS bottom terminals facing the first base substrate.
9. The semiconductor device of claim 7 , wherein a bottom side of the RDS substrate comprises a foundation layer positioned over the first base substrate and the first encapsulant.
10. The semiconductor device of claim 7 , wherein the first base conductive structure is coupled with the RDS conductive structure and the second base conductive structure is coupled with the RDS conductive structure.
11. The semiconductor device of claim 7 , wherein the RDS substrate:
only partially overlaps a footprint of the first electronic component, and
only partially overlaps a footprint of the second electronic component.
12. The semiconductor device of claim 7 , wherein:
the first electronic component is over a plurality of first component terminals coupled with the RDS conductive structure; and
the first electronic component is over a plurality of additional first component terminals coupled with the first base conductive structure.
13. The semiconductor device of claim 12 , wherein:
the plurality of first component terminals are spaced at a first pitch; and
the plurality of additional first component terminals are spaced at a second pitch that is greater than the first pitch.
14. A semiconductor device, comprising:
a first base substrate;
a first encapsulant contacting a lateral side of the first base substrate;
a redistribution structure (RDS) substrate over the first base substrate and comprising an RDS conductive structure;
a first electronic component over the RDS substrate and over a first component terminal coupled with the RDS conductive structure;
a second electronic component over the RDS substrate and over a second component terminal coupled with the RDS conductive structure; and
a second encapsulant over the RDS conductive structure and contacting a lateral side of the first electronic component and the second electronic component; and
wherein:
(a) a bottom side of the RDS substrate lacks RDS bottom terminals facing the first base substrate; or
(b) a bottom side of the RDS substrate comprises a foundation layer positioned over the first base substrate and the first encapsulant.
15. The semiconductor device of claim 14 , wherein:
the bottom side of the RDS substrate lacks RDS bottom terminals facing the first base substrate.
16. The semiconductor device of claim 14 , wherein:
the bottom side of the RDS substrate comprises a foundation layer positioned over the first base substrate and the first encapsulant.