Nano imprinting with reusable polymer template with metallic or oxide coating
Methods and systems are provided for fabricating polymer-based imprint lithography templates having thin metallic or oxide coated patterning surfaces. Such templates show enhanced fluid spreading and filling (even in absence of purging gases), good release properties, and longevity of use. Methods and systems for fabricating oxide coated versions, in particular, can be performed under atmospheric pressure conditions, allowing for lower cost processing and enhanced throughput.
1. A method of forming an imprint lithography template, the method comprising:
forming a polymer layer on a surface of a base layer;
forming a pattern in the polymer layer to create a patterned polymer layer;
selecting an oxide;
determining a desired layer thickness as a function of both the selected oxide and an attribute of the pattern; and
depositing the selected oxide on the patterned polymer layer to form an oxide layer of the determined desired layer thickness.
2. The method of claim 1 , wherein the desired layer thickness is between 2 and 50 nanometers.
3. The method of claim 1 , wherein forming the pattern in the polymer layer to create the patterned polymer layer comprises contacting the polymer layer with an additional imprint lithography template.
4. The method of claim 3 , wherein forming the pattern in the polymer layer to create the patterned polymer layer comprises, after contacting the polymer layer with the additional imprint lithography template, solidifying the polymer layer to define the patterned polymer layer.
5. The method of claim 1 , wherein the base layer comprises silicon, glass, or a flexible film.
6. The method of claim 1 , wherein depositing the selected oxide includes depositing the selected oxide on the patterned polymer layer by sputtering.
7. The method of claim 1 , wherein depositing the selected oxide comprises sputtering or chemical vapor deposition.
8. The method of claim 1 , wherein depositing the selected oxide includes depositing the selected oxide on the patterned polymer layer by atomic layer deposition (ALD).
9. The method of claim 7 , wherein depositing the selected oxide comprises plasma enhanced chemical vapor deposition or atmospheric plasma chemical vapor deposition.
10. The method of claim 9 wherein depositing the selected oxide comprises an atmospheric pressure plasma jet process or an atmospheric pressure dielectric barrier discharge process.
11. A method of forming an imprint lithography template, the method comprising:
forming a polymer layer on a surface of a base layer;
forming a pattern in the polymer layer to create a patterned polymer layer;
selecting an oxide for an oxide layer to be formed on the patterned polymer layer;
determining a desired layer thickness of the oxide layer as a function of both i) the selected oxide of the oxide layer and ii) an attribute of the pattern of the patterned polymer layer; and
depositing the selected oxide on the patterned polymer layer to form the oxide layer of the determined desired layer thickness comprises sputtering, chemical vapor deposition, or atomic layer deposition.
12. The method of claim 11 , wherein the oxide comprises SiO x .
13. The method of claim 12 , wherein the oxide comprises SiO 2 .
14. The method of claim 11 , wherein the desired layer thickness is between 2 and 50 nanometers.
15. The method of claim 11 , wherein forming the pattern in the polymer layer to create the patterned polymer layer comprises contacting the polymer layer with an additional imprint lithography template.
16. The method of claim 15 , wherein forming the pattern in the polymer layer to create the patterned polymer layer comprises, after contacting the polymer layer with the additional imprint lithography template, solidifying the polymer layer to define the patterned polymer layer.
17. The method of claim 11 , wherein the base layer comprises silicon, glass, or a flexible film.
18. The method of claim 11 , wherein depositing the selected oxide comprises plasma enhanced chemical vapor deposition or atmospheric plasma chemical vapor deposition.
19. The method of claim 18 , wherein depositing the selected oxide comprises an atmospheric pressure plasma jet process or an atmospheric pressure dielectric barrier discharge process.