Package having different metal densities in different regions and manufacturing method thereof
A package has a first region and a second region. The package includes a first die, a second die, an encapsulant, and an inductor. The second die is stacked on and bonded to the first die. The encapsulant is aside the second die. At least a portion of the encapsulant is located in the second region. The inductor is located in the second region. A metal density in the first region is greater than a metal density in the second region.
1. A package having a first region and a second region, comprising:
a first die;
a second die stacked on and bonded to the first die;
an encapsulant aside the second die, wherein at least a portion of the encapsulant is located in the second region; and
an inductor located in the second region, wherein a metal density in the first region is greater than a metal density in the second region.
2. The package of claim 1 , wherein the first die comprises:
a semiconductor substrate;
an interconnection structure over the semiconductor substrate;
a passivation layer over the interconnection structure;
a bonding layer over the passivation layer, wherein the bonding layer comprises bonding pads located in the first region and dummy bonding pads located in the second region, and a pattern density of the bonding pads is greater than a pattern density of the dummy bonding pads; and
bonding vias penetrating through the passivation layer, wherein the bonding vias electrically connect the interconnection structure and the bonding pads.
3. The package of claim 2 , wherein the inductor is embedded in the interconnection structure.
4. The package of claim 2 , wherein the dummy bonding pads are electrically floating.
5. The package of claim 2 , wherein a ratio of the pattern density of the dummy bonding pads to the pattern density of the bonding pads ranges from 1:2.7 to 1:27.
6. The package of claim 2 , wherein a spacing between two adjacent bonding pads is smaller than a spacing between two adjacent dummy bonding pads.
7. The package of claim 2 , wherein a width of each bonding pad is greater than a width of each dummy bonding pad.
8. The package of claim 1 , further comprising a redistribution structure over the second die and the encapsulant, wherein the inductor is embedded in the redistribution structure.
9. A package, comprising:
a first die, comprising bonding pads and dummy bonding pads, wherein a pattern density of the bonding pads is greater than a pattern density of the dummy bonding pads;
a second die bonded to the first die, wherein the second die covers the bonding pads;
an encapsulant disposed on the first die, wherein the encapsulant laterally encapsulates the second die and covers the dummy bonding pads; and
an inductor over the dummy bonding pads.
10. The package of claim 9 , wherein the dummy bonding pads are electrically floating.
11. The package of claim 9 , wherein the inductor is embedded in the first die.
12. The package of claim 9 , further comprising a redistribution structure over the second die and the encapsulant, wherein the inductor is embedded in the redistribution structure.
13. The package of claim 9 , wherein the encapsulant is directly in contact with the dummy bonding pads and the inductor.
14. The package of claim 9 , wherein a spacing between two adjacent bonding pads is smaller than a spacing between two adjacent dummy bonding pads.
15. The package of claim 9 , wherein a width of each bonding pad is greater than a width of each dummy bonding pad.
16. A manufacturing method of a package, comprising:
providing a wafer substrate having a first region and a second region, comprising:
forming first bonding pads having a first pattern density in the first region; and
forming dummy bonding pads having a second pattern density in the second region, wherein the first pattern density is greater than the second pattern density;
placing a die on the first region of the wafer substrate, wherein the die comprises second bonding pads hybrid bonded to the first bonding pads;
encapsulating the die by an encapsulant; and
forming an inductor over the second region.
17. The method of claim 16 , wherein at least a portion of the encapsulant is formed to be located over the second region.
18. The method of claim 17 , wherein the inductor is formed to be in direct contact with the portion of the encapsulant located over the second region.
19. The method of claim 16 , further comprising:
forming a redistribution structure over the die and the encapsulant, wherein the inductor is formed in the redistribution structure; and
forming conductive terminals over the redistribution structure.
20. The method of claim 16 , wherein the dummy bonding pads are formed to be electrically floating.