Etching method
An etching method of an exemplary embodiment involves providing a substrate in a chamber of a plasma treatment system. The substrate includes a silicon-containing film. The method further involves etching the silicon-containing film by a chemical species in plasma generated from a process gas in the chamber. The process gas contains a halogen gas component and phosphorous gas component.
1. A method of etching comprising:
A) supporting a substrate on a substrate support in a chamber of a plasma treatment system, the substrate including a silicon-containing film, and the substrate support having a bottom electrode;
B) generating plasma in the chamber from a process gas containing a halogen component and a phosphorus component;
C) applying bias electric power to the substrate support while in the presence of the plasma in the chamber, wherein
the bias electric power is a pulsed radio-frequency bias power or a pulsed DC voltage with negative polarity,
the bias electric power is pulsed bias electric power and is periodically applied to the substrate support,
each period of the pulsed bias electric power comprises a first term and a second term, a level of the pulsed bias electric power at the first term being higher than a level of the pulsed bias electric power at the second term, and
a duty ratio of the first term in the period is in an inclusive range from 1% through 80%.
2. The method of claim 1 , wherein the phosphorus component comprises at least one phosphorus compound selected from the group consisting of PF3, PCl3, PF5, PCl5, POCl3, PH3, PBr3, and PBr5.
3. The method of claim 2 , further comprising:
alternately applying to the chamber a first phosphorus-free gas and a second phosphorus-containing gas.
4. The method of claim 1 , wherein the generating comprises:
etching the silicon-containing film to form a recess; and
forming a protective film on the side wall of the recess, wherein
the etching and forming are carried out independently from each other, and
the protective film contains phosphorus-oxygen bonds.
5. The method of claim 1 , wherein:
the hydrogen component in the process gas comprises at least one selected from the group consisting of H2, HF, CxHy, CHxFy, and NH3, where x and y are each natural numbers.
6. The method of claim 5 , wherein
the process gas further comprises a carbon component, the carbon component in the process gas comprises at least one gas selected from the group consisting of CF4, C3F8, C4F6 and C4F8.
7. The method of claim 1 , further comprising etching the silicon-containing film and forming a protective film on a side wall of a recess formed as a result of the etching.
8. The method of claim 7 , wherein the protective film contains phosphorus-oxygen bonds.
9. The method of claim 8 , wherein the protective film further contains phosphorus-silicon bonds.
10. The method of claim 7 , further comprising setting a temperature of the substrate to 0° C. or less before beginning the etching.
11. The method of claim 7 , wherein the bias electric power being 2 kW or more.
12. A method of etching comprising:
A) supporting a substrate on a substrate support in a chamber of a plasma treatment system, the substrate including a silicon-containing film, and the substrate support having a bottom electrode;
B) generating plasma in the chamber from a process gas containing a halogen component and a phosphorus component;
C) applying bias electric power to the substrate support while in the presence of the plasma in the chamber, and
alternately applying to the chamber a first phosphorus-free gas and a second phosphorus-containing gas, wherein
the bias electric power is a pulsed radio-frequency bias power or a pulsed DC voltage with negative polarity, and
a term during which the first phosphorus-free gas is supplied at least partially overlaps with a term during which the bias electric power is applied to the substrate support.
13. The method of claim 12 , further comprising:
etching the silicon-containing film; and
forming a protective film on a side wall of the recess, the protective film containing phosphorus-oxygen bonds derived from the phosphorus component contained in the process gas,
wherein the etching and the forming are carried out independent of one another.
14. The method of claim 12 , wherein a ratio of a flow rate of the second phosphorus-containing gas to a flow rate of the first phosphorus-free gas is above 0 and 0.5 or less.
15. The method of claim 12 , wherein the generating comprises:
etching the silicon-containing film to form a recess; and
forming a protective film on the side wall of the recess, wherein
the etching and forming are carried out independently from each other, and the protective film contains phosphorus-oxygen bonds.
16. The method of claim 12 , further comprising:
etching the silicon-containing film; and
forming a protective film on a side wall of the recess, the protective film containing phosphorus-oxygen bonds derived from the phosphorus component contained in the process gas,
wherein the etching and the forming are carried out at a same time.
17. The method of claim 16 , wherein the forming includes forming the protective film to have a thickness that decreases with a depth of the recess.
18. The method of claim 16 , wherein the bias electric power applied to the substrate support is 2 kW or more.
19. The method of claim 16 , wherein the forming includes forming the protective film to include phosphorous-silicon bonds.
20. The method of claim 16 , wherein the process gas comprises a first phosphorus-free gas and a second phosphorus-containing gas.
21. The method of claim 20 , further comprising:
alternately applying to the chamber the first phosphorus-free gas and the second phosphorus-containing gas.
22. The method of claim 21 , wherein a ratio of a flow rate of the second phosphorus-containing gas to a flow rate of the first phosphorus-free gas is above 0 and 0.5 or less.