Semiconductor device and method for fabricating the same

1. A method for fabricating a semiconductor device, comprising:

forming a mold stack layer including a mold layer and a supporter layer over a substrate;

forming an opening by etching the mold layer and the supporter layer of the mold stack layer;

selectively forming a supporter reinforcement layer on a partially etched side portion of the supporter layer which is positioned in the opening;

forming a bottom electrode in the opening in which the supporter reinforcement layer is formed;

forming a supporter opening by etching a portion of the supporter layer to form a supporter that supports an outer wall of the bottom electrode;

removing the mold layer out of the mold stack layer;

forming a dielectric layer on the bottom electrode, the supporter reinforcement layer, and the supporter; and

forming a top electrode on the dielectric layer.

2. The method of claim 1 , wherein the supporter reinforcement layer selectively grows on the etched side portion of the supporter layer among the mold layer and the supporter layer.

3. The method of claim 1 , wherein the supporter reinforcement layer fully covers the etched side portion of the supporter layer.

4. The method of claim 1 , wherein the supporter reinforcement layer has a closed loop shape that surrounds the outer wall of the bottom electrode.

5. The method of claim 1 , wherein the supporter reinforcement layer has a broken loop shape that partially surrounds the outer wall of the bottom electrode.

6. The method of claim 1 , wherein a side profile of the supporter reinforcement layer is one among a curved shape, a vertical shape, and a tapered shape.

7. The method of claim 1 , wherein the supporter layer has a multi-level structure.

8. The method of claim 1 , wherein the supporter reinforcement layer has a multi-level structure.

9. The method of claim 1 , wherein the supporter reinforcement layer has a multi-level structure including a supporter reinforcement layer of a closed loop shape, and a supporter reinforcement layer of a broken loop shape which is disposed at higher level than the supporter reinforcement layer of the closed loop shape.

10. The method of claim 1 , wherein the supporter layer and the supporter reinforcement layer include the same material.

11. The method of claim 1 , wherein the supporter layer and the supporter reinforcement layer include a nitrogen-containing material.

12. The method of claim 1 , wherein the supporter layer and the supporter reinforcement layer include silicon nitride, silicon carbon nitride, silicon boron nitride, or a combination thereof.

13. The method of claim 1 , wherein the mold layer includes silicon oxide, and

the supporter layer and the supporter reinforcement layer include silicon nitride.

14. The method of claim 1 , wherein the supporter layer includes a first silicon nitride, and

the supporter reinforcement layer includes a second silicon nitride that selectively grows from the first silicon nitride.

15. The method of claim 1 , further comprising before the forming of the mold stack layer:

forming a buried word line in the substrate; and

forming a bit line over the substrate.

16. The method of claim 1 , further comprising after the removing the mold layer out of the mold stack layer:

forming an additional supporter reinforcement layer that selectively grows from at least one between the supporter and the supporter reinforcement layer.

17. The method of claim 16 , wherein the additional supporter reinforcement layer includes a nitrogen-containing material.

18. The method of claim 16 , wherein the additional supporter reinforcement layer includes silicon nitride, silicon carbon nitride, silicon boron nitride, or a combination thereof.