Capacitor structure and semiconductor device including the capacitor structure
A capacitor structure includes a lower electrode structure having a lower electrode on a substrate and an electrode structure including electrode patterns stacked on the lower electrode in a vertical direction substantially perpendicular to an upper surface of the substrate, a dielectric pattern contacting the lower electrode structure, and an upper electrode contacting the dielectric pattern.
1 . A capacitor structure, comprising:
a lower electrode structure including:
a lower electrode on a substrate, and
an electrode structure on the lower electrode, the electrode structure having electrode patterns stacked in a vertical direction substantially perpendicular to an upper surface of the substrate;
a dielectric pattern contacting the lower electrode structure; and
an upper electrode contacting the dielectric pattern.
2 . The capacitor structure as claimed in claim 1 , wherein the dielectric pattern contacts a sidewall of the lower electrode and a sidewall of a first portion of the electrode structure.
3 . The capacitor structure as claimed in claim 2 , further comprising a first support layer on a sidewall of a second portion of the lower electrode structure, the second portion not contacting the dielectric pattern, and the first support layer including an insulating material.
4 . The capacitor structure as claimed in claim 3 , wherein the first support layer includes at least one of silicon nitride, silicon carbonitride, and silicon boronitride.
5 . The capacitor structure as claimed in claim 3 , further comprising a second support layer on the sidewall of the lower electrode, the second support layer including an insulating material.
6 . The capacitor structure as claimed in claim 3 , wherein the dielectric pattern contacts a lower surface or an upper surface of the first support layer.
7 . The capacitor structure as claimed in claim 2 , wherein:
the dielectric pattern does not contact a sidewall of a first electrode pattern among the electrode patterns, the first electrode pattern being an uppermost one of the electrode patterns, and
the dielectric pattern contacts sidewalls of second electrode patterns among the electrode patterns, the second electrode patterns not being the first electrode pattern.
8 . The capacitor structure as claimed in claim 2 , wherein:
the dielectric pattern contacts neither a sidewall of a first electrode pattern nor a sidewall of a second electrode pattern among the electrode patterns, the first electrode pattern and the second electrode pattern being an uppermost one and a lowermost one, respectively, of the electrode patterns, and
the dielectric pattern contacts sidewalls of third electrode patterns among the electrode patterns, the third electrode patterns not being the first electrode pattern or the second electrode pattern.
9 . The capacitor structure as claimed in claim 2 , wherein:
the dielectric pattern does not contact a sidewall of a first electrode pattern among the electrode patterns, the first electrode pattern not being an uppermost one of the electrode patterns, and
the dielectric pattern contacts sidewalls of second electrode patterns among the electrode patterns, the second electrode patterns not being the first electrode pattern.
10 . The capacitor structure as claimed in claim 2 , wherein;
the electrode patterns include a plurality of first electrode patterns spaced apart from each other in the vertical direction,
the dielectric pattern does not contact sidewalls of the plurality of first electrode patterns among the electrode patterns, and
the dielectric pattern contacts sidewalls of second electrode patterns among the electrode patterns, the second electrode patterns not being the plurality of first electrode patterns.
11 . The capacitor structure as claimed in claim 1 , wherein the dielectric pattern does not contact an upper surface of the electrode structure.
12 . The capacitor structure as claimed in claim 1 , wherein the electrode patterns include a substantially same material as a material of the lower electrode.
13 . The capacitor structure as claimed in claim 1 , wherein at least one of the electrode patterns includes a material different from a material of the lower electrode.
14 . A capacitor structure, comprising:
a lower electrode structure including:
a lower electrode on a substrate, and
an electrode structure on and contacting the lower electrode;
a first support layer contacting a sidewall of a first portion of the lower electrode;
a second support layer contacting a sidewall of a first portion of the electrode structure;
a dielectric pattern contacting a sidewall of a second portion of the lower electrode and a sidewall of a second portion of the electrode structure; and
an upper electrode contacting the dielectric pattern.
15 . The capacitor structure as claimed in claim 14 , wherein each of the first support layer and the second support layer includes silicon nitride, silicon carbonitride, silicon boronitride, or silicon carbide.
16 . The capacitor structure as claimed in claim 14 , wherein the dielectric pattern contacts a lower surface or an upper surface of each of the first support layer and the second support layer.
17 . The capacitor structure as claimed in claim 14 , wherein:
the electrode structure includes a plurality of electrode patterns spaced apart from each other in a vertical direction substantially perpendicular to an upper surface of the substrate, and
the plurality of electrode patterns include a substantially same material as a material of the lower electrode.
18 . The capacitor structure as claimed in claim 14 , wherein:
the electrode structure includes a plurality of electrode patterns spaced apart from each other in a vertical direction substantially perpendicular to an upper surface of the substrate, and
the plurality of electrode patterns include a material different from a material of the lower electrode.
19 . A semiconductor device, comprising:
an active pattern on a substrate;
a gate structure in an upper portion of the active pattern, the gate structure extending in a first direction substantially parallel to an upper surface of the substrate;
a bit line structure extending in a second direction substantially parallel to the upper surface of the substrate and substantially perpendicular to the first direction, the bit line structure being on a central portion of the active pattern;
a contact plug structure on each of opposite edge portions of the active pattern; and
a capacitor structure on the contact plug structure, the capacitor structure including:
a lower electrode structure having:
a lower electrode, and
an electrode structure including electrode patterns stacked on the lower electrode in a vertical direction substantially perpendicular to the upper surface of the substrate,
a dielectric pattern contacting the lower electrode structure, and
an upper electrode contacting the dielectric pattern.
20 . The semiconductor device as claimed in claim 19 , wherein:
the dielectric pattern contacts a sidewall of a first portion of the lower electrode and a sidewall of a first portion of the electrode structure, and
the semiconductor device further includes:
a first support layer on a sidewall of a second portion of the lower electrode, the first support layer including an insulating material, and
a second support layer on a sidewall of a second portion of the electrode structure, the second support layer including an insulating material.