IP Library › Granted Patent US 11,323,097
Granted Patent B2
US 11,323,097 · App. 16/937,472 · Granted May 3, 2022

Bulk acoustic wave filters on shared die

Inventors: Akshara Kankar (Irvine, CA); Tomoya Komatsu (Irvine, CA); Abhishek Dey (Greensboro, NC); Nan Wu (Irvine, CA); Stephane Richard Marie Wloczysiak (Irvine, CA)
Assignee: Skyworks Solutions, Inc.
H03H9/706H03F3/19H03H3/02H03H9/02118H03H9/0523H03H9/0542H03H9/105H03H9/173H03H9/176H03H9/562H03H9/564H03H9/568H03F2200/294H03F2200/451H03H2003/021H04B1/38
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Quick Facts
Patent No.
US 11,323,097
App. No.
16/937,472
Granted
May 3, 2022
Kind
B2
Abstract

Bulk acoustic wave resonators of two or more different filters can be on a common die. The two filters can be included in a multiplexer, such as a duplexer, or implemented as standalone filters. With bulk acoustic wave resonators of two or more filters on the same die, the filters can be implemented in less physical space compared to implementing the same filters of different die. Related methods, radio frequency systems, radio frequency modules, and wireless communication devices are also disclosed.

Claims (34)

1. A multi-filter die with bulk acoustic wave filters, the multi-filter die comprising:

a first filter located in a first region of a substrate, the first filter including a first plurality of bulk acoustic wave resonators, and the first plurality of bulk acoustic wave resonators each including a raised frame structure; and

a second filter located in a second region of the substrate, the second filter including a second plurality of bulk acoustic wave resonators, at least one of the first plurality of bulk acoustic wave resonators having the same resonant frequency as at least one of the second plurality of bulk acoustic wave resonators.

2. The multi-filter die of claim 1 wherein the first and second filters are included in a multiplexer.

3. The multi-filter die of claim 2 wherein the first and second filters are electrically connected to one another at a common contact by at least one electrical connection of the multi-filter die.

4. A multi-filter die with bulk acoustic wave filters, the multi-filter die comprising:

a first filter located in a first region of a substrate, the first filter including a first plurality of bulk acoustic wave resonators; and

a second filter located in a second region of the substrate, the second filter including a second plurality of bulk acoustic wave resonators, at least one of the first plurality of bulk acoustic wave resonators having the same resonant frequency as at least one of the second plurality of bulk acoustic wave resonators, and the multi-filter die is free from electrical connections between the first filter and the second filter.

5. The multi-filter die of claim 1 wherein the first plurality of bulk acoustic wave resonators and the second plurality of bulk acoustic wave resonators are film bulk acoustic wave resonators.

6. The multi-filter die of claim 4 wherein the first plurality of bulk acoustic wave resonators each include a raised frame structure.

7. A multi-filter die with bulk acoustic wave filters, the multi-filter die comprising:

a first filter located in a first region of a substrate, the first filter including a first plurality of bulk acoustic wave resonators, and the first filter being a first band pass filter having a first passband; and

a second filter located in a second region of the substrate, the second filter including a second plurality of bulk acoustic wave resonators, at least one of the first plurality of bulk acoustic wave resonators having the same resonant frequency as at least one of the second plurality of bulk acoustic wave resonators, the second filter is being second band pass filter having a second passband, and the first passband overlaps with the second passband.

8. The multi-filter die of claim 1 wherein the first filter and the second filter include a common material stack.

9. The multi-filter die of claim 1 wherein a thickness of a piezoelectric layer of the one of the first plurality of bulk acoustic wave resonators is the same as a thickness of a piezoelectric layer of the one of the second plurality of bulk acoustic wave resonators.

10. The multi-filter die of claim 1 wherein a thickness of a lower electrode of the one of the first plurality of bulk acoustic wave resonators is the same as a thickness of a lower electrode of the one of the second plurality of bulk acoustic wave resonators.

11. The multi-filter die of claim 10 wherein the lower electrode of the one of the first plurality of bulk acoustic wave resonators includes a same material as the lower electrode of the one of the second plurality of bulk acoustic wave resonators.

12. A multi-filter die with bulk acoustic wave filters, the multi-filter die comprising:

a first filter located in a first region of a substrate, the first filter including a first plurality of bulk acoustic wave resonators, each of the first plurality of bulk acoustic wave resonators having a resonant frequency; and

a second filter located in a second region of the substrate, the second filter including a second plurality of bulk acoustic wave resonators, each of the second plurality of bulk acoustic wave resonators having a resonant frequency, a difference between resonant frequencies of two bulk acoustic wave resonators of the first plurality of bulk acoustic wave resonators being equal to a difference between resonant frequencies of two bulk acoustic wave resonators of the second plurality of bulk acoustic wave resonators, and each of the resonant frequencies of the first plurality of bulk acoustic wave resonators being different from each of the resonant frequencies of the second plurality of bulk acoustic wave resonators.

13. A multi-filter die with bulk acoustic wave filters, the multi-filter die comprising:

a first filter located in a first region of a substrate, the first filter including a first plurality of bulk acoustic wave resonators, each of the first plurality of bulk acoustic wave resonators having a resonant frequency, and the first plurality of bulk acoustic wave resonators each including a raised frame structure; and

a second filter located in a second region of the substrate, the second filter including a second plurality of bulk acoustic wave resonators, each of the second plurality of bulk acoustic wave resonators having a resonant frequency, a difference between resonant frequencies of two bulk acoustic wave resonators of the first plurality of bulk acoustic wave resonators being equal to a difference between resonant frequencies of two bulk acoustic wave resonators of the second plurality of bulk acoustic wave resonators.

14. The multi-filter die of claim 12 wherein the first and second filters are included in a multiplexer.

15. A multi-filter die with bulk acoustic wave filters, the multi-filter die comprising:

a first filter located in a first region of a substrate, the first filter including a first plurality of bulk acoustic wave resonators, each of the first plurality of bulk acoustic wave resonators having a resonant frequency; and

a second filter located in a second region of the substrate, the second filter including a second plurality of bulk acoustic wave resonators, each of the second plurality of bulk acoustic wave resonators having a resonant frequency, a difference between resonant frequencies of two bulk acoustic wave resonators of the first plurality of bulk acoustic wave resonators being equal to a difference between resonant frequencies of two bulk acoustic wave resonators of the second plurality of bulk acoustic wave resonators, and the multi-filter die is free from electrical connections between the first filter and the second filter.

16. The multi-filter die of claim 12 wherein the first plurality of bulk acoustic wave resonators and the second plurality of bulk acoustic wave resonators are film bulk acoustic wave resonators.

17. The multi-filter die of claim 13 wherein each of the resonant frequencies of the first plurality of bulk acoustic wave resonators are different from each of the resonant frequencies of the second plurality of bulk acoustic wave resonators.

18. A multi-filter die with bulk acoustic wave filters, the multi-filter die comprising:

a first filter located in a first region of a substrate, the first filter including a first plurality of bulk acoustic wave resonators, each of the first plurality of bulk acoustic wave resonators having a resonant frequency, the first filter being a first band pass filter having a first passband; and

a second filter located in a second region of the substrate, the second filter including a second plurality of bulk acoustic wave resonators, each of the second plurality of bulk acoustic wave resonators having a resonant frequency, a difference between resonant frequencies of two bulk acoustic wave resonators of the first plurality of bulk acoustic wave resonators being equal to a difference between resonant frequencies of two bulk acoustic wave resonators of the second plurality of bulk acoustic wave resonators, the second filter being a second band pass filter having a second passband, and the first passband overlaps with the second passband.

19. The multi-filter die of claim 12 wherein the first filter and the second filter are formed using a common material stack.

20. The multi-filter die of claim 15 wherein the first plurality of bulk acoustic wave resonators each include a raised frame structure.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 10, 2021
From: KANKAR, AKSHARA; KOMATSU, TOMOYA; DEY, ABHISHEK; WU, NAN; WLOCZYSIAK, STEPHANE RICHARD MARIE
To: SKYWORKS SOLUTIONS, INC.
Reel/Frame 055220/0323 →
Continuity (4)
Provisional Application 62878135 · Jul 24, 2019
Provisional Application 62878209 · Jul 24, 2019
Provisional Application 62878189 · Jul 24, 2019
Related Publication 20210044278A1 · Feb 11, 2021
Cited By (6)
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