Solid-state image pickup element, method of manufacturing solid-state image pickup element, and electronic apparatus
To solve at least one of various problems in an image sensor in a 2PD scheme. A solid-state image pickup element includes a plurality of pixels each including a photoelectric conversion element formed on a silicon substrate, in which some pixels in the plurality of pixels each have the photoelectric conversion element partitioned by a first-type separating region extending in a plate shape in a direction along a thickness direction of the silicon substrate, and other pixels in the plurality of pixels each have the photoelectric conversion element partitioned by a second-type separating region formed with a material different from a material of the first-type separating region, the second-type separating region extending in a plate shape in the direction along the thickness direction of the silicon substrate.
1. A light detecting device, comprising:
first, second, third, and fourth pixels disposed adjacent to each other in a plan view,
wherein the first pixel includes a first photoelectric conversion region partitioned by a first separation region,
wherein the second pixel includes a second photoelectric conversion region partitioned by a second separation region,
wherein the third pixel includes a third photoelectric conversion region partitioned by a third separation region,
wherein the fourth pixel includes a fourth photoelectric conversion region partitioned by a fourth separation region,
wherein a material of the first separation region is different from a material of the second separation region,
wherein a material of the third separation region is a same material as a material of the second separation region, and
wherein the first separation region includes an impurity ion implanted region.
2. The light detecting device according to claim 1 , wherein the second separation region includes a silicon oxide film, and wherein the third separation region includes a silicon oxide film.
3. The light detecting device according to claim 1 , wherein, in the plan view, the fourth separation region has a cross shape.
4. The light detecting device according to claim 1 , wherein the first pixel is a red pixel.
5. A light detecting device, comprising:
first, second, third, and fourth pixels disposed adjacent to each other in a plan view,
wherein the first pixel includes a first photoelectric conversion region partitioned by a first separation region,
wherein the second pixel includes a second photoelectric conversion region partitioned by a second separation region,
wherein the third pixel includes a third photoelectric conversion region partitioned by a third separation region,
wherein the fourth pixel includes a fourth photoelectric conversion region partitioned by a fourth separation region,
wherein a material of the first separation region is different from a material of the second separation region, and
wherein the first pixel is a red pixel.
6. The light detecting device according to claim 5 , wherein a material of the third separation region is a same material as a material of the second separation region.
7. The light detecting device according to claim 5 , wherein the first separation region includes an impurity ion implanted region.
8. The light detecting device according to claim 5 , wherein the second separation region includes a silicon oxide film.
9. The light detecting device according to claim 5 , wherein a material of the second, third, and fourth separation regions are the same.
10. The light detecting device according to claim 5 , wherein the second and third pixels are green pixels.
11. The light detecting device according to claim 10 , wherein the fourth pixel is a blue pixel.
12. The light detecting device according to claim 5 , wherein the second separation region includes a silicon oxide film, and wherein the third separation region includes a silicon oxide film.
13. The light detecting device according to claim 5 , wherein, in the plan view, the fourth separation region has a cross shape.
14. The light detecting device according to claim 13 , wherein the second and third pixels are green pixels.
15. A light detecting device, comprising:
first, second, third, and fourth pixels disposed adjacent to each other in a plan view,
wherein the first pixel includes a first photoelectric conversion region partitioned by a first separation region,
wherein the second pixel includes a second photoelectric conversion region partitioned by a second separation region,
wherein the third pixel includes a third photoelectric conversion region partitioned by a third separation region,
wherein the fourth pixel includes a fourth photoelectric conversion region partitioned by a fourth separation region,
wherein a material of the first separation region is different from a material of the second separation region, and
wherein, in the plan view, the fourth separation region has a cross shape.
16. The light detecting device according to claim 15 , wherein a material of the third separation region is a same material as a material of the second separation region.
17. The light detecting device according to claim 15 , wherein the first separation region includes an impurity ion implanted region.
18. The light detecting device according to claim 15 , wherein the second separation region includes a silicon oxide film.
19. The light detecting device according to claim 15 , wherein the second separation region includes a silicon oxide film, and wherein the third separation region includes a silicon oxide film.
20. The light detecting device according to claim 15 , wherein a material of the second, third, and fourth separation regions are the same.