Semiconductor device comprising metal-insulator-metal (MIM) capacitor

1. A semiconductor device, comprising:

a semiconductor substrate;

an isolation feature on the substrate;

a plurality of gates on the isolation feature, wherein each gate comprises a gate electrode and a high-k dielectric layer disposed between the gate electrode and the isolation feature and disposed on and in contact with at least one side of the gate electrode;

a fill metal between the plurality of gates on the isolation feature;

a fin in an active region on the semiconductor substrate;

at least one gate on the fin, wherein the at least one gate comprises a gate electrode, a high-k dielectric layer disposed between the gate electrode and the fin and disposed on and in contact with at least one side of the gate electrode, and a spacer disposed on and in contact with the high-k dielectric layer on at least one side of the gate electrode; and

at least two sources/drains (S/Ds), each S/D disposed on and/or in the fin adjacent to the spacer on each side of the at least one gate;

wherein the fill metal is also disposed adjacent to both sides of the at least one gate on the fin and in contact with each S/D.

2. The semiconductor device of claim 1 , wherein:

the fill metal is in contact with the high-k dielectric layer on the at least one side of the gate electrode forming a plurality of capacitors; and

the isolation feature is in an inactive region of the semiconductor device.

3. The semiconductor device of claim 1 , further comprising:

a capacitor dielectric disposed between the high-k dielectric layer on each side of each gate of the plurality of gates on the isolation feature and the fill metal between the plurality of gates on the isolation feature, forming a plurality of capacitors.

4. The semiconductor device of claim 3 , wherein the capacitor dielectric comprises hafnium oxide, zirconium oxide, aluminum oxide, or silicon oxide.

5. The semiconductor device of claim 3 , wherein the capacitor dielectric has a thickness from about 2 nm to about 5 nm.

6. A semiconductor device, comprising:

a semiconductor substrate;

a fin on an active region of the semiconductor substrate;

an isolation feature on the substrate;

a plurality of gates on the isolation feature, wherein each gate comprises a gate electrode and a high-k dielectric layer disposed between the gate electrode and the isolation feature and touching at least one side of the gate electrode, wherein at least one gate of the plurality of gates is on the fin;

a spacer touching the high-k dielectric layer on at least one side of the gate electrode of the at least one gate on the fin and touching the high-k dielectric layer on at least one side of each gate electrode of the plurality of gates on the isolation feature; and

a fill metal between the plurality of gates on the isolation feature, wherein the fill metal after deposition touches the high-k dielectric layer on at least one side of and below a top of the gate electrode of at least one of the plurality of gates.

7. The semiconductor device of claim 6 , wherein:

the isolation feature is in an inactive region of the semiconductor device.

8. The semiconductor device of claim 6 , further comprising:

at least two sources/drains (S/Ds), each S/D disposed on and/or in the fin adjacent to the spacer on each side of the at least one gate; and

wherein the fill metal is further disposed adjacent to both sides of the at least one gate on the fin and in contact with each S/D.

9. The semiconductor device of claim 6 , further comprising:

a capacitor dielectric disposed between the high-k dielectric layer on each side of each gate of the plurality of gates on the isolation feature and the fill metal between the plurality of gates on the isolation feature, forming a plurality of capacitors.

10. The semiconductor device of claim 9 , wherein the capacitor dielectric comprises hafnium oxide, zirconium oxide, aluminum oxide, or silicon oxide.

11. The semiconductor device of claim 9 , wherein the capacitor dielectric has a thickness from about 2 nm to about 5 nm.

12. A semiconductor device, comprising:

a semiconductor substrate;

an isolation feature on the substrate; and

a plurality of capacitors on the isolation feature, wherein each capacitor comprises:

a first plurality of gates, wherein each gate comprises a gate electrode, a high-k dielectric layer disposed between the gate electrode and the isolation feature and touching at least one side of the gate electrode, and a nitride cap on the gate electrode and the high-k dielectric layer;

a fill metal between the plurality of gates on the isolation feature, wherein the fill metal touches the high-k dielectric layer on at least one side of and below a top of the gate electrode of at least one of the first plurality of gates;

a capacitor dielectric between the high-k dielectric layer on each side of each gate of the first plurality of gates on the isolation feature and the fill metal between the first plurality of gates;

a fin on an active region of the semiconductor substrate;

a second plurality of gates, wherein each gate comprises a gate electrode and a high-k dielectric layer disposed between the gate electrode and the fin and touching at least one side of the gate electrode; and

a spacer touching the high-k dielectric on the sides of at least one gate electrode of the second plurality of gates.

13. The semiconductor device of claim 12 , wherein the capacitor dielectric comprises hafnium oxide, zirconium oxide, aluminum oxide, or silicon oxide.

14. The semiconductor device of claim 12 , wherein the capacitor dielectric has a thickness from about 2 nm to about 5 nm.

15. The semiconductor device of claim 12 , further comprising:

at least two sources/drains (S/Ds), each S/D disposed on and/or in the fin adjacent to the spacer on each side of the at least one gate; and

wherein the fill metal is further disposed adjacent to both sides of the at least one gate on the fin and in contact with each S/D.