Ballistic reversible superconducting memory element

1. A reversible memory element, comprising:

a reversible memory cell, comprising:

a Josephson junction; and

a passive inductor connected to the Josephson junction such that the passive inductor and the Josephson junction form a loop;

a ballistic interconnect; and

a bidirectional input/output port connecting the reversible memory cell and ballistic interconnect, wherein terminals of the bidirectional input/output port are shunted across the Josephson junction and shunted across the passive inductor;

wherein a polarized input fluxon propagating along the ballistic interconnect exchanges polarity with a stationary stored fluxon in the reversible memory cell in response to the input fluxon reflecting off the reversible memory cell.

2. The reversible memory element of claim 1 , wherein the reversible memory element is a floating circuit that is powered solely by the input fluxon.

3. The reversible memory element of claim 1 , wherein the terminals of the bidirectional input/output port are positive and negative terminals.

4. The reversible memory element of claim 1 , wherein the input fluxon and stored fluxon both reverse polarities in response to the input fluxon reflecting off the reversible memory cell if the respective polarities of the input fluxon and stored fluxon differ from each other.

5. The reversible memory element of claim 1 , wherein the Josephson junction has a critical current matched to approximately one half of the peak current of the input fluxon.

6. The reversible memory element of claim 1 , wherein the exchange of polarities between the input fluxon and stored fluxon constitutes a read/write operation.

7. The reversible memory element of claim 6 , wherein the read/write operation exchanges a single bit's worth of binary data contained in the input fluxon with another single bit's worth of binary data contained in the stored fluxon.

8. The reversible memory element of claim 6 , wherein the read/write operation occurs at a speed of approximately 10 picoseconds.

9. The reversible memory element of claim 1 , wherein the input fluxon reflects elastically off the reversible memory cell.

10. The reversible memory element of claim 1 , wherein the ballistic interconnect comprises a long Josephson junction.

11. The reversible memory element of claim 1 , wherein the ballistic interconnect comprises a passive transmission line.

12. The reversible memory element of claim 1 , wherein the reversible memory element is a component of:

a linear register; or

a two-dimensional memory array.

13. A reversible memory element, comprising:

a first Josephson junction, wherein the first Josephson junction comprises a long Josephson junction configured to ballistically propagate an input fluxon representing a single bit of polarized binary data;

a reversible memory cell comprising a second Josephson junction and a passive inductor connected to the second Josephson junction such that the passive inductor and the second Josephson junction form a loop, wherein the reversible memory cell is configured to store a stationary fluxon representing a single bit of polarized binary data;

a bidirectional input/output port connecting the first Josephson junction and the reversible memory cell, wherein terminals of the bidirectional input/output port are shunted across the second Josephson junction and shunted across the passive inductor;

wherein the reversible memory cell is configured to exchange the single bit of polarized binary data represented by the input fluxon with the single bit of polarized binary data represented by the stored fluxon in response to the input fluxon reflecting off the reversible memory cell.

14. The reversible memory element of claim 13 , wherein the reversible memory element is a floating circuit that is powered solely by the input fluxon.

15. The reversible memory element of claim 13 , wherein the input fluxon and stored fluxon both reverse polarities in response to the input fluxon reflecting off the reversible memory cell if the respective polarities of the input fluxon and stored fluxon differ from each other.

16. The reversible memory element of claim 13 , wherein the second Josephson junction in the reversible memory cell has a critical current matched to approximately one half of the peak current of the input fluxon.

17. The reversible memory element of claim 13 , wherein the input fluxon reflects elastically off the reversible memory cell.

18. A method of reading and writing binary data with a superconducting reversible memory element, the method comprising:

storing a stationary fluxon in a reversible memory cell comprising a Josephson junction and a passive inductor connected to the Josephson junction such that the passive inductor and the Josephson junction form a loop, wherein the stationary fluxon represents a single bit of polarized binary data, and wherein the reversible memory cell is connected to a bidirectional input/output port, wherein terminals of the bidirectional input/output port are shunted across the Josephson junction and shunted across the passive inductor;

ballistically propagating an input fluxon along a transmission line connected to the bidirectional input/output port, wherein the input fluxon represents a single bit of polarized binary data; and

exchanging the single bit of polarized binary data represented by the input fluxon with the single bit of polarized binary data represented by the stored fluxon in response to the input fluxon reflecting off the reversible memory cell.

19. The method of claim 18 , wherein the input fluxon and stored fluxon both reverse polarities in response to the input fluxon reflecting off the reversible memory cell if the respective polarities of the input fluxon and stored fluxon differ from each other.

20. The method of claim 18 , wherein the exchange of the single bit of polarized binary data represented by the input fluxon with the single bit of polarized binary data represented by the stored fluxon occurs at a speed of approximately 10 picoseconds.

21. The method of claim 18 , wherein the input fluxon reflects elastically off the reversible memory cell.