WIDE BANDGAP WAFER BACKSIDE CAPPED BY A DETECTION FACILITATING LAYER

1 . An apparatus, comprising:

a wide bandgap wafer having a backside and a frontside; and

a detection facilitating layer capped on the backside of the wide bandgap wafer, the detection facilitating layer having a thickness less than a thickness of the wide bandgap wafer.

2 . The apparatus of claim 1 , wherein detection facilitating layer is a polycrystalline SiC layer.

3 . The apparatus of claim 1 , wherein the wide bandgap wafer includes at least one of a Silicon Carbide (SiC) wafer, a Gallium Nitride (GaN) wafer, a Gallium Oxide (Ga 2 O 3 ) wafer, an Aluminum Nitride (AlN) wafer, or a diamond wafer.

4 . The apparatus of claim 1 , wherein the detection facilitating layer has a thickness of at least approximately 1 micrometer.

5 . The apparatus of claim 1 , wherein the detection facilitating layer is chemically formed on the wide bandgap wafer.

6 . The apparatus of claim 1 , wherein the detection facilitating layer is not a separate wafer bonded to the wide bandgap wafer.

7 . The apparatus of claim 1 , wherein one or more semiconductor elements are formed on or within at least a portion of the frontside of the wide bandgap wafer.

8 . The apparatus of claim 1 , wherein the capping includes depositing the detection facilitating layer using a chemical vapor deposition process.

9 . A method, comprising:

forming a dielectric layer on a frontside of a wide bandgap wafer; and

forming a detection facilitating layer on a backside of the wide bandgap wafer using a chemical formation process.

10 . The method of claim 9 , wherein the detection facilitating layer has a thickness less than a thickness of the wide bandgap wafer.

11 . The method of claim 9 , wherein the forming the detection facilitating layer includes forming using a chemical vapor deposition process.

12 . The method of claim 9 , wherein the dielectric layer is a first dielectric layer, the method further comprising:

forming a second dielectric layer on the backside of the wide bandgap wafer; and

removing the second dielectric layer from the backside of the wide bandgap wafer using an etch process.

13 . The method of claim 9 , further comprising:

removing the dielectric layer from the frontside of the wide bandgap wafer; and

forming a semiconductor element at least one of within or on the frontside of the wide bandgap wafer.

14 . The method of claim 13 , further comprising:

removing the polycrystalline SiC layer from the wide bandgap wafer after the forming of the semiconductor element is completed.

15 . An apparatus, comprising:

a tool configured to receive a capped wide bandgap wafer having a backside and a frontside, the capped wide bandgap wafer having a detection facilitating layer capped on the backside of the wide bandgap wafer; and

a sensor configured to detect that the capped wide bandgap wafer has been received by the tool in response to a signal emitted from the sensor.

16 . The apparatus of claim 15 , wherein the signal is an infrared signal and the sensor is an infrared sensor.

17 . The apparatus of claim 15 , wherein the sensor is configured to detect the capped wide bandgap wafer during at least one of loading or unloading the capped wide bandgap wafer.

18 . The apparatus of claim 15 , wherein the tool is configured to contact the detection facilitating layer of the capped wide bandgap wafer.

19 . A method, comprising:

receiving, within a tool, a capped wide bandgap wafer having a backside and a frontside, the capped wide bandgap wafer having a polycrystalline SiC layer capped on the backside of the wide bandgap wafer; and

emitting a signal from a sensor such that capped wide bandgap wafer is detected in response to the signal emitted from the sensor.

20 . The method of claim 19 , wherein the signal is an infrared signal and the sensor is an infrared sensor.