Monolithic semiconductor device assemblies
In a general aspect, a semiconductor device assembly can include a semiconductor substrate that excludes a buried oxide layer. The semiconductor device assembly can also include a first semiconductor device stack disposed on a first portion of the semiconductor substrate, and a second semiconductor device stack disposed on a second portion of the semiconductor substrate. The semiconductor device assembly can further include an isolation trench having a dielectric material disposed therein, the isolation trench being disposed between the first portion of the semiconductor substrate and the second portion of the semiconductor substrate. The isolation trench can electrically isolate the first portion of the semiconductor substrate from the second portion of the semiconductor substrate.
1. A semiconductor device assembly comprising:
a thermally conductive dielectric material;
a first portion of a semiconductor substrate disposed on a surface of the thermally conductive dielectric material;
a second portion of the semiconductor substrate disposed on the surface of the thermally conductive dielectric material, the semiconductor substrate excluding a buried oxide layer;
a first semiconductor device stack disposed on the first portion of the semiconductor substrate opposite the thermally conductive dielectric material;
a second semiconductor device stack disposed on the second portion of the semiconductor substrate opposite the thermally conductive dielectric material, the second semiconductor device stack being electrically coupled with the first semiconductor device stack; and
an isolation trench having a dielectric material disposed therein, the isolation trench being defined in the semiconductor substrate between the first portion of the semiconductor substrate and the second portion of the semiconductor substrate, the isolation trench terminating at the surface of the thermally conductive dielectric material and electrically isolating the first portion of the semiconductor substrate from the second portion of the semiconductor substrate.
2. The semiconductor device assembly of claim 1 , wherein the isolation trench is disposed between the first semiconductor device stack and the second semiconductor device stack.
3. The semiconductor device assembly of claim 1 , wherein:
the first semiconductor device stack includes a first gallium-nitride (GaN) transistor;
the second semiconductor device stack includes a second GaN transistor; and
the semiconductor substrate is a silicon substrate.
4. The semiconductor device assembly of claim 1 , wherein the isolation trench is disposed around the first portion of the semiconductor substrate and around the second portion of the semiconductor substrate.
5. The semiconductor device assembly of claim 4 , wherein the isolation trench is further disposed around the first semiconductor device stack and disposed around the second semiconductor device stack.
6. The semiconductor device assembly of claim 1 , wherein the dielectric material disposed in the isolation trench includes a molding compound, the molding compound being further disposed on:
at least a portion of the first semiconductor device stack; and
at least a portion of the second semiconductor device stack.
7. The semiconductor device assembly of claim 1 , wherein the dielectric material disposed in the isolation trench includes at least one of an oxide material, a nitride material, an organic material, or a ceramic material.
8. The semiconductor device assembly of claim 1 , wherein:
the first semiconductor device stack is disposed on a first surface of the first portion of the semiconductor substrate;
the second semiconductor device stack is disposed on a first surface of the second portion of the semiconductor substrate; and
the thermally conductive dielectric material is disposed on:
a second surface of the first portion of the semiconductor substrate opposite the first surface of the first portion of the semiconductor substrate;
a second surface of the second portion of the semiconductor substrate opposite the first surface of the second portion of the semiconductor substrate; and
a surface of the dielectric material disposed in the isolation trench that is coplanar with the second surface of the first portion of the semiconductor substrate and coplanar with the second surface of the second portion of the semiconductor substrate.
9. The semiconductor device assembly of claim 8 , wherein the thermally conductive dielectric material includes at least one of:
a nitride ceramic material; or
a diamond coat material.
10. The semiconductor device assembly of claim 8 , wherein the thermally conductive dielectric material is a deposited material.
11. The semiconductor device assembly of claim 1 , wherein the semiconductor device assembly is a flip-chip semiconductor assembly.
12. The semiconductor device assembly of claim 1 , wherein the semiconductor device assembly is singulated along a portion of the isolation trench.
13. A semiconductor device assembly comprising:
a first portion of a semiconductor substrate;
a second portion of the semiconductor substrate, the semiconductor substrate excluding a buried oxide layer;
a thermally conductive dielectric layer disposed on:
a surface of the first portion of the semiconductor substrate; and
a surface of the second portion of the semiconductor substrate, the surface of the second portion of the semiconductor substrate being coplanar with the surface of the first portion of the semiconductor substrate;
a first semiconductor device stack disposed on the first portion of the semiconductor substrate opposite the thermally conductive dielectric layer;
a second semiconductor device stack disposed on the second portion of the semiconductor substrate opposite the thermally conductive dielectric layer, the second semiconductor device stack being electrically coupled with the first semiconductor device stack; and
an isolation trench defined in the semiconductor substrate and having a dielectric material disposed therein, the isolation trench terminating at the thermally conductive dielectric layer, the isolation trench being disposed:
between the first portion of the semiconductor substrate and the second portion of the semiconductor substrate; and
between the first semiconductor device stack and the second semiconductor device stack,
the isolation trench electrically isolating the first portion of the semiconductor substrate from the second portion of the semiconductor substrate, and electrically isolating the first semiconductor device stack from the second semiconductor device stack.
14. The semiconductor device assembly of claim 13 , wherein the dielectric material includes a molding compound, the molding compound being further disposed on:
at least a portion of the first semiconductor device stack; and
at least a portion of the second semiconductor device stack.
15. The semiconductor device assembly of claim 13 , wherein the isolation trench is disposed around:
the first portion of the semiconductor substrate;
the second portion of the semiconductor substrate;
the first semiconductor device stack; and
the second semiconductor device stack.
16. The semiconductor device assembly of claim 13 , wherein:
the first semiconductor device stack includes a first gallium-nitride (GaN) transistor;
the second semiconductor device stack includes a second GaN transistor; and
the semiconductor substrate is a silicon substrate having a 111 crystal orientation.