Jet ablation die singulation systems and related methods
Implementations of a method of singulating a plurality of semiconductor die may include forming an opening in a layer of passivation material coupled to a second side of a semiconductor substrate; etching substantially through a thickness of the semiconductor substrate at the opening in the layer of passivation material to form etched sidewalls along the thickness at a plurality of die streets; and jet ablating one or more portions of the layer of passivation material that overhangs the etched sidewalls.
1. A method of singulating a plurality of semiconductor die, the method comprising:
forming an opening in a layer of passivation material coupled to a second side of a semiconductor substrate;
etching substantially through a thickness of the semiconductor substrate at the opening in the layer of passivation material to form etched sidewalls along the thickness at a plurality of die streets; and
jet ablating one or more portions of the layer of passivation material that overhangs the etched sidewalls.
2. The method of claim 1 , wherein forming an opening in the layer of passivation material further comprises one of etching or jet ablating.
3. The method of claim 1 , wherein jet ablating one or more portions of the layer of passivation material further comprises jet ablating from the second side of the semiconductor substrate.
4. The method of claim 1 , wherein jet ablating one or more portions of the layer of passivation material further comprises jet ablating from the first side of the semiconductor substrate.
5. The method of claim 1 , wherein etching substantially through the thickness of the semiconductor substrate further comprises plasma etching.
6. The method of claim 1 , wherein the thickness of the semiconductor substrate is less than 50 microns.
7. The method of claim 1 , wherein the thickness of the semiconductor substrate is 25 microns.
8. The method of claim 1 , further comprising jet ablating one or more portions of the layer of passivation material after etching substantially through the thickness of the semiconductor substrate.
9. A method of singulating a plurality of semiconductor die, the method comprising:
forming a pattern in a back metal layer coupled on a first side of a semiconductor substrate, the semiconductor substrate comprising a plurality of semiconductor die;
etching substantially through a thickness of the semiconductor substrate at the pattern in the back metal layer to form a plurality of sidewalls across the thickness;
etching substantially through a thickness of a passivation layer coupled to a second side of the semiconductor substrate at the pattern in the back metal layer to form an opening in the passivation layer; and
jet ablating one or more portions of the passivation layer overhanging the plurality of sidewalls.
10. The method of claim 9 , wherein jet ablating one or more portions of the passivation layer further comprises jet ablating from the second side of the semiconductor substrate.
11. The method of claim 9 , wherein jet ablating one or more portions of the passivation layer further comprises jet ablating from the first side of the semiconductor substrate.
12. The method of claim 9 , wherein etching substantially through the thickness of the semiconductor substrate further comprises plasma etching.
13. The method of claim 9 , wherein the thickness of the semiconductor substrate is less than 50 microns.
14. The method of claim 9 , wherein the thickness of the semiconductor substrate is 25 microns.
15. The method of claim 9 , further comprising jet ablating one or more portions of the passivation layer after forming the opening in the passivation layer.
16. A method of singulating a plurality of semiconductor die, the method comprising:
mounting a semiconductor substrate to a tape;
etching substantially through a thickness of the semiconductor substrate at a plurality of die streets to form etched sidewalls along the thickness; and
jet ablating one or more portions of a layer of passivation material that overhangs the etched sidewalls;
wherein the layer of passivation material is used as a mask for etching substantially through the thickness of the semiconductor substrate.
17. The method of claim 16 , wherein etching substantially through the thickness further comprises plasma etching.
18. The method of claim 16 , wherein jet ablating one or more portions of the layer of passivation material further comprises jet ablating from a second side of the semiconductor substrate.
19. The method of claim 16 , wherein jet ablating one or more portions of the layer of passivation material further comprises jet ablating from a first side of the semiconductor substrate.