Periphery shoreline augmentation for integrated circuits
A multichip package may include at least a main die mounted on a substrate. The main die may be coupled to one or more transceiver dies also mounted on the substrate. The main die may include one or more universal interface blocks configured to interface with an on-package memory device or an on-package expansion die, both of which can be mounted on the substrate. The expansion die may include external memory interface (EMIF) components for communicating with off-package memory devices and/or bulk random-access memory (RAM) components for storing large amounts of data for the main die. Smaller input-output blocks such as GPIO (general purpose input-output) or LVDS (low-voltage differential signaling) interfaces may be formed within the core fabric of the main die without causing routing congestion while providing the necessary clock source.
1. A multichip package comprising:
a substrate;
a processor die mounted on the substrate, wherein the processor die comprises a periphery and a universal interface block formed along the periphery; and
an external I/O die mounted on the substrate, wherein the external I/O die is communicatively coupled to the processor die via the universal interface block, wherein the external I/O die comprises external memory interface (EMIF) circuitry configured to communicate with off-package memory via the EMIF circuitry.
2. The multichip package of claim 1 , wherein:
the processor die is fabricated using a first process technology;
the external I/O die is fabricated using a second process technology; and
the first process technology is different than the second process technology.
3. The multichip package of claim 2 , wherein the processor die comprises cache memory.
4. The multichip package of claim 3 , wherein the multichip package does not comprise an on-package memory die.
5. The multichip package of claim 3 , wherein the cache memory comprises a plurality of caches.
6. The multichip package of claim 2 , wherein the EMIF circuitry is configured to support double data rate (DDR) external memory interfaces.
7. The multichip package of claim 2 , wherein the EMIF circuitry is configured to support quad data rate (QDR) external memory interfaces.
8. The multichip package of claim 2 , wherein the EMIF circuitry comprises a memory controller.
9. The multichip package of claim 2 , comprising a plurality of universal interface blocks disposed on a single die.
10. The multichip package of claim 9 , wherein the plurality of universal interface blocks is positioned along one shoreline of the single die.
11. The multichip package of claim 2 , wherein the multichip package is configured to support eight double data rate (DDR) memory channels to the off-package memory.
12. The multichip package of claim 2 , wherein the processor die comprises a plurality of processing elements configured to process data.
13. A processor comprising:
a substrate;
a processor die mounted on the substrate, wherein:
the processor die comprises a periphery and a universal interface block formed along the periphery; and
the processor die is fabricated using a first process technology; and
an external I/O die mounted on the substrate, wherein:
the external I/O die is communicatively coupled to the processor die via the universal interface block;
the external I/O die comprises external memory interface (EMIF) circuitry configured to communicate with external memory via the EMIF circuitry; and
the external I/O die is fabricated using a second process technology that is different than the first process technology.
14. The processor of claim 13 , wherein the EMIF circuitry is configured to support double data rate (DDR) type-3 (DDR3) memory interfaces, low power DDR3 (LPDDR3) memory interfaces, DDR type-4 (DDR4) memory interfaces, low power DDR4 (LPDDR4) memory interfaces, DDR type-5 (DDR5) memory interfaces, quad data rate (QDR) memory interfaces, Open NAND Flash Interface (ONFI) memory interfaces, or a combination thereof.
15. The processor of claim 13 , comprising a plurality of universal interface blocks positioned along a single shoreline of a single die of the processor.
16. The processor of claim 13 , wherein the processor die comprises cache memory that includes a plurality of memory blocks.
17. A multi-die electronic device comprising:
a substrate;
a processor die mounted on the substrate, wherein the processor die comprises:
a periphery;
a universal interface block formed along the periphery;
a plurality of processing elements configured to process data; and
a plurality of memory blocks; and
an external I/O die mounted on the substrate, wherein:
the external I/O die is communicatively coupled to the processor die via the universal interface block;
the external I/O die comprises external memory interface (EMIF) circuitry configured to support double data rate (DDR) external memory interfaces; and
the external I/O die is configured to communicate with external memory via the EMIF circuitry.
18. The multi-die electronic device of claim 17 , wherein the multi-die electronic device comprises nine dies mounted on the substrate.
19. The multi-die electronic device of claim 18 , wherein the EMIF circuitry comprises a memory controller.
20. The multi-die electronic device of claim 19 , wherein:
the processor die is fabricated using a first process technology;
the external I/O die is fabricated using a second process technology; and
the first process technology is different than the second process technology.