Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium
There is provide a technique that includes: etching a base exposed on a surface of a substrate by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: (a) forming a modified layer on a surface of the base by supplying a modifying agent to the base; and (b) causing a reaction between a halogen-containing radical and the base by supplying a halogen-containing gas to the modified layer such that the modified layer reacts with the halogen-containing gas to generate the halogen-containing radical.
1. A method of manufacturing a semiconductor device, comprising:
etching a base exposed on a surface of a substrate by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing:
(a) forming a modified layer on a surface of the base by supplying a modifying agent to the base; and
(b) causing a reaction between a halogen-containing radical and the base by supplying a halogen-containing gas to the modified layer such that the modified layer reacts with the halogen-containing gas to generate the halogen-containing radical.
2. The method according to claim 1 , wherein in (b), the halogen-containing gas is supplied under a condition in which an amount of the halogen-containing gas that reacts with the modified layer in the reaction between the halogen-containing gas and the modified layer is larger than an amount of the halogen-containing gas that reacts with the base in the reaction between the halogen-containing gas and the base.
3. The method according to claim 1 , wherein in (b), the halogen-containing gas is supplied under a condition in which the reaction between the halogen-containing gas and the modified layer proceeds and the reaction between the halogen-containing gas and the base does not proceed.
4. The method according to claim 1 , wherein in (b), the base is etched with the halogen-containing radical generated by the reaction between the halogen-containing gas and the modified layer.
5. The method according to claim 4 , wherein in (b), the halogen-containing gas is supplied under a condition in which an amount of the halogen-containing radical that reacts with the base in the reaction between the halogen-containing radical and the base is larger than an amount of the halogen-containing gas that reacts with the base in the reaction between the halogen-containing gas and the base.
6. The method according to claim 4 , wherein in (b), the halogen-containing gas is supplied under a condition in which the reaction between the halogen-containing radical and the base proceeds and the reaction between the halogen-containing gas and the base does not proceed.
7. The method according to claim 1 , wherein the modifying agent includes a silicon-containing gas, and
wherein in (a), silicon contained in the silicon-containing gas is adsorbed on the surface of the base.
8. The method according to claim 1 , wherein the modifying agent includes aminosilane, and
wherein in (a), silicon contained in the aminosilane is adsorbed on the surface of the base.
9. The method according to claim 7 , wherein in (a), the modifying agent is supplied under a condition in which the adsorption of the silicon on the surface of the base is saturated.
10. The method according to claim 7 , wherein in (a), the modifying agent is supplied under a condition in which the adsorption of the silicon on the surface of the base is self-limited.
11. The method according to claim 8 , wherein in (a), the modifying agent is supplied under a condition in which the adsorption of the silicon on the surface of the base is saturated.
12. The method according to claim 1 , wherein the cycle further includes (c) pre-processing the surface of the base before performing (a).
13. The method according to claim 12 , wherein in (c), an adsorption site is formed on the surface of the base.
14. The method according to claim 1 , wherein the cycle further includes (c) OH-terminating the surface of the base before performing (a).
15. The method according to claim 12 , wherein in (c), a gas containing oxygen and hydrogen is supplied to the substrate.
16. The method according to claim 1 , wherein the halogen-containing gas includes at least one selected from the group of a fluorine-containing gas, a chlorine-containing gas, and an iodine-containing gas.
17. The method according to claim 1 , wherein the halogen-containing radical includes at least one selected from the group of a fluorine-containing radical, a chlorine-containing radical, and an iodine-containing radical.
18. The method according to claim 1 , wherein the base contains at least one selected from the group of a semi-metal element and a metal element.
19. A non-transitory computer-readable recording medium storing a program that causes, by a computer, a substrate processing apparatus to perform a process in a process chamber of the substrate processing apparatus, the process comprising:
etching a base exposed on a surface of a substrate by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing:
(a) forming a modified layer on a surface of the base by supplying a modifying agent to the base; and
(b) causing a reaction between a halogen-containing radical and the base by supplying a halogen-containing gas to the modified layer such that the modified layer reacts with the halogen-containing gas to generate the halogen-containing radical.