Plasma processing method and plasma processing apparatus
Provided is a plasma processing method for plasma etching an etching target film formed on a sample. The method includes a protective film forming step of selectively forming a protective film on an upper portion of a pattern formed on the sample and adjusting a width of the formed protective film such that a distribution of the width of the formed protective film in a surface of the sample becomes a desired distribution, and a step of plasma etching the etching target film after the protective film forming step.
1. A plasma processing method for plasma etching an etching target film formed on a sample, the method comprising:
a protective film forming step of selectively forming a protective film on an upper portion of a pattern formed on the sample, comprising
monitoring spectra of interference light reflected from the sample on which the protective film is formed;
adjusting a width of the formed protective film such that a distribution of the width of the formed protective film in a surface of the sample becomes a desired distribution, and based on a comparison result between a pattern of spectra of interference light reflected from the sample,
wherein, in a cross-section view, a first thickness of the protective film formed at a central portion of the sample is larger than a second thickness of the protective film formed at an edge of the sample, and
wherein a pattern of the monitored spectra of the interference light when the distribution of the width of the protective film in the surface of the sample is the desired distribution; and
a step of plasma etching the etching target film after the protective film forming step.
2. The plasma processing method according to claim 1 , wherein
the protective film forming step further adjusts a thickness of the formed protective film based on a comparison result between the pattern of the spectra of the interference light reflected from the sample on which the protective film is formed and the pattern of the monitored spectra of the interference light when a distribution of the thickness of the protective film in the surface of the sample of the etching target film is a desired distribution.
3. The plasma processing method according to claim 1 , wherein
the pattern is a pattern of a groove, and
the etching target film is embedded in the groove.
4. The plasma processing method according to claim 1 , wherein
the pattern formed on the sample in which the protective film is selectively formed on the upper portion is a groove pattern, and
the etching target film is embedded in the groove.
5. The plasma processing method according to claim 1 , wherein
the desired distribution is a uniform distribution in the surface of the sample.
6. The plasma processing method according to claim 1 , wherein
the etching target film is plasma etched to a desired depth by repeating the protective film forming step and the step of plasma etching the etching target film.
7. The plasma processing method according to claim 1 , wherein
the protective film forming step further adjusts a thickness of the protective film such that a distribution of the thickness of the protective film in the surface of the sample is a desired distribution.
8. The plasma processing method according to claim 7 , wherein
when the thickness of the protective film is saturated, a plasma etching processing chamber in which the etching target film is plasma etched is plasma cleaned.
9. A plasma processing apparatus comprising:
a processing chamber where an etching target film formed on a sample is plasma etched using mask;
a radio frequency power supply that supplies radio frequency power for generating the plasma;
a sample stage on which the sample is placed; and
a control unit that executes a protective film forming step of selectively forming a protective film on an upper portion of a pattern formed on the sample, comprising
monitoring spectra of interference light reflected from the sample on which the protective film is formed;
adjusting a width of the formed protective film such that a distribution of the width of the formed protective film in a surface of the sample becomes a desired distribution, and based on a comparison result between a pattern of spectra of interference light reflected from the sample; and
etching the etching target film after the protective film forming step
wherein, in a cross-section view, a first thickness of the protective film formed at a central portion of the sample is larger than a second thickness of the protective film formed at an edge of the sample, and
wherein a pattern of the monitored spectra of the interference light when the distribution of the width of the protective film in the surface of the sample is the desired distribution.