Treatment liquid for semiconductor wafers, which contains hypochlorite ions
A treatment liquid for cleaning a semiconductor wafer is a treatment liquid contains (A) a hypochlorite ion and (C) a solvent, in which pH at 25° C. is more than 7 and less than 12.0. A method for removing ruthenium and tungsten from a semiconductor wafer and cleaning the semiconductor wafer includes bringing the treatment liquid into contact with the semiconductor wafer containing ruthenium or tungsten is provided.
1. A treatment liquid for cleaning a semiconductor wafer, comprising:
(A) a hypochlorite ion;
(B1) an alkyl ammonium ion; and
(C) a solvent, wherein
a concentration of the (A) hypochlorite ion is 0.05 mass % to 6 mass %, and pH at 25° C. is more than 7 and less than 12.0.
2. The treatment liquid according to claim 1 , wherein a concentration of the (A) hypochlorite ion is 0.1 mass % to 6 mass %.
3. The treatment liquid according to claim 2 , wherein a concentration of the (A) hypochlorite ion is 0.3 mass % to 6 mass %.
4. A treatment liquid for cleaning a semiconductor wafer, comprising:
(A) a hypochlorite ion;
(B1) an alkyl ammonium ion; and
(C) a solvent, wherein
the solvent (C) contains an organic solvent, and pH at 25° C. is 8 or more and less than 12.0.
5. The treatment liquid according to claim 4 , wherein a concentration of the (A) hypochlorite ion is 0.05 mass % to 20.0 mass %.
6. The treatment liquid according to claim 1 , wherein the (B1) alkyl ammonium ion is a quaternary alkyl ammonium ion.
7. The treatment liquid according to claim 4 , wherein the (B1) alkyl ammonium ion is a quaternary alkyl ammonium ion.
8. A method for cleaning a semiconductor wafer, wherein the treatment liquid according to claim 1 is brought into contact with the semiconductor wafer.
9. A method for cleaning a semiconductor wafer, wherein the treatment liquid according to claim 4 is brought into contact with the semiconductor wafer.
10. The method for cleaning a semiconductor wafer according to claim 8 , wherein the semiconductor wafer has at least one metal selected from the group consisting of ruthenium and tungsten on a surface thereof, and the method includes a step of removing the metal.
11. The method for cleaning a semiconductor wafer according to claim 9 , wherein the semiconductor wafer has at least one metal selected from the group consisting of ruthenium and tungsten on a surface thereof, and the method includes a step of removing the metal.
12. A method for manufacturing the treatment liquid according to claim 1 , comprising:
(a) preparing an ion exchange resin to which alkyl ammonium is added; and
(b) bringing the ion exchange resin to which the alkyl ammonium is added into contact with an aqueous solution containing a hypochlorite ion.
13. A method for manufacturing the treatment liquid according to claim 4 , comprising:
(a) preparing an ion exchange resin to which alkyl ammonium is added; and
(b) bringing the ion exchange resin to which the alkyl ammonium is added into contact with an aqueous solution containing a hypochlorite ion.
14. The method for manufacturing the treatment liquid according to claim 12 , comprising (c) adjusting pH after (b).
15. The method for manufacturing the treatment liquid according to claim 13 , comprising (c) adjusting pH after (b).