Treatment liquid for semiconductor wafers
Provided is a treatment liquid for etching a transition metal on a semiconductor wafer, the treatment liquid comprising: (A) a hypohalite ion or periodate ion; and (B) an alkylammonium salt represented by the following Formula (1). (wherein a is an integer from 6 to 20, R 1 , R 2 , and R 3 are independently a hydrogen atom or an alkyl group having carbon number from 1 to 20, and X − is a bromine-containing ion), and a method of etching a transition metal by bringing the treatment liquid for semiconductor wafers into contact with the transition metal used in a semiconductor formation process.
1. A treatment liquid for etching a transition metal on a semiconductor wafer, the treatment liquid comprising:
(A) a hypohalite ion; and
(B) an alkylammonium salt represented by the following Formula (1)
wherein the hypohalite ion is a hypobromite ion, and the concentration of hypobromite ions is from 0.0096 to 1.92 mass %,
wherein a is an integer from 6 to 20, R 1 , R 2 , and R 3 are independently a hydrogen atom or an alkyl group having carbon number from 1 to 20, and X − is a bromine-containing ion.
2. The treatment liquid for etching a transition metal on a semiconductor wafer according to claim 1 , wherein the concentration of the (B) alkylammonium salt represented by Formula (1) is from 0.0001 to 10 mass %.
3. The treatment liquid for etching a transition metal on a semiconductor wafer according to claim 1 , further comprising (C) at least one ammonium ion selected from the group consisting of tetramethylammonium ion, ethyltrimethylammonium ion, tetraethylammonium ion, tetrapropylammonium ion, and tetrabutylammonium ion.
4. The treatment liquid for etching a transition metal on a semiconductor wafer according to claim 1 , wherein the (A) hypohalite ion is a hypohalite ion, and the pH at 25° C. is from more than 7 to less than 14.0.
5. The treatment liquid for etching a transition metal on a semiconductor wafer according to claim 1 , wherein the transition metal on the semiconductor wafer is a Group 6 metal or ruthenium.
6. The treatment liquid for etching a transition metal on a semiconductor wafer according to claim 1 , further comprising a chloride ion.
7. The treatment liquid for etching a transition metal on a semiconductor wafer according to claim 1 , further comprising a chlorate ion.
8. The treatment liquid for etching a transition metal on a semiconductor wafer according to claim 1 , wherein the concentration of metal contained in the treatment liquid for semiconductor wafers is 1 ppb or less by mass.
9. A method of etching, comprising a step of bringing a semiconductor wafer into contact with the treatment liquid for etching a transition metal on a semiconductor wafer according to claim 1 .
10. A treatment liquid for etching a transition metal on a semiconductor wafer, the treatment liquid comprising:
(A) a hypohalite ion; and
(B) an alkylammonium salt represented by the following Formula (1)
wherein the hypohalite ions are hypochlorite ions and hypobromite ions, and the concentration of hypochlorite ions is from 0.05 to 20.0 mass %, and the concentration of hypobromite ions is from 0.0096 to 1.92 mass %,
wherein a is an integer from 6 to 20, R 1 , R 2 , and R 3 are independently a hydrogen atom or an alkyl group having carbon number from 1 to 20, and X − is a bromine-containing ion.