Etchant composition for etching titanium layer or titanium-containing layer, and etching method
Provided are: an etchant composition for titanium or titanium alloy, the etchant composition being used for selectively etching a titanium layer or titanium-containing layer formed on an oxide semiconductor layer; and an etching method using said etchant composition. The etchant composition according to the present invention, which is used for etching a titanium layer or titanium-containing layer on an oxide semiconductor, comprises: a compound containing ammonium ions; hydrogen peroxide; and a basic compound, wherein the etchant composition has a pH of 7-11.
1. An etchant composition for etching a titanium layer or titanium-containing layer on an oxide semiconductor, comprising an ammonium ion-containing compound, hydrogen peroxide, a basic composition, and phosphorus atom-containing oxo acid and/or an ion thereof, wherein the ammonium ion-containing compound is one or more compounds selected from a group consisting of ammonium sulfate, ammonium phosphate, ammonium acetate, ammonium nitrate, ammonium chloride and ammonium succinate, wherein the basic composition is selected from a group consisting of an inorganic alkali compound, quaternary amine hydroxide and an amine, and having pH between 7 and 11.
2. The etchant composition of claim 1 , further comprising aminocarboxylic acid and/or carboxylic acid.
3. The etchant composition of claim 1 , further comprising a copper-anticorrosive agent.
4. The etchant composition of claim 1 , wherein the concentration of the ammonium ion is between 0.01 to 1.00 mol/L.
5. The etchant composition of claim 1 , wherein the concentration of the phosphorus atom-containing oxo acid or ion thereof is between 0.0001 and 1.0 mol/L.
6. The etchant composition of claim 1 , wherein the phosphorus atom-containing oxo acid or an ion thereof is one or more compounds or liberated ions therefrom selected from phosphoric acid, phosphonic acid, multi-site phosphonic acid, phosphinic acid, phosphorous acid and derivatives thereof.
7. The etchant composition of claim 1 , comprising between 0.1 and 40% by mass of the ammonium ion-containing compound, between 5 and 30% by mass of hydrogen peroxide and between 0.1 and 50% by mass of the basic composition.
8. The etchant composition of claim 1 , wherein the oxide semiconductor is selected from a group consisting of a metal oxide comprising indium, gallium and zinc as main ingredients (IGZO), a metal oxide comprising indium and zinc as main ingredients (IZO) and a metal oxide comprising gallium and zinc as main ingredients (GZO).
9. A method of etching a titanium layer or titanium-containing layer, comprising a step of etching the titanium layer or titanium-containing layer on the oxide semiconductor using the etchant composition of claim 1 .
10. A method of manufacturing a thin film transistor, comprising a step of etching the titanium layer or titanium-containing layer on the oxide semiconductor using the etchant composition of claim 1 .