IP Library Patent Application 16962375
Patent Application
App. No. 16/962,375

POLISHING LIQUID, POLISHING LIQUID SET, AND POLISHING METHOD

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Quick Facts
Patent No.
US None
App. No.
16/962,375
Abstract

A polishing liquid containing abrasive grains, a quaternary phosphonium cation, and a liquid medium, in which the abrasive grains contain at least one selected from the group consisting of a metal hydroxide and cerium oxide, and the quaternary phosphonium cation has a hydrocarbon group having two or more carbon atoms which is bonded to a phosphorus atom.

Claims (45)

1 . A polishing liquid comprising:

abrasive grains;

a quaternary phosphonium cation; and

a liquid medium, wherein

the abrasive grains contain a metal hydroxide, and

the quaternary phosphonium cation has a hydrocarbon group having two or more carbon atoms which is bonded to a phosphorus atom.

2 . The polishing liquid according to claim 1 , wherein the metal hydroxide contains cerium hydroxide.

3 . A polishing liquid comprising:

abrasive grains;

a quaternary phosphonium cation; and

a liquid medium, wherein

the abrasive grains contain cerium oxide, and

the quaternary phosphonium cation has a hydrocarbon group having two or more carbon atoms which is bonded to a phosphorus atom.

4 . The polishing liquid according to claim 1 , wherein the hydrocarbon group contains a butyl group.

5 . The polishing liquid according to claim 1 , wherein the hydrocarbon group contains a phenyl group.

6 . The polishing liquid according to claim 1 , wherein the quaternary phosphonium cation contains a phosphonium cation represented by general formula (I) below.

[Chemical Formula 1]

[In the formula, R 1 , R 2 , R 3 , and R 4 each independently represent a hydrogen atom or a hydrocarbon group which may have a substituent, at least one of R 1 , R 2 , R 3 , and R 4 is a hydrocarbon group having two or more carbon atoms which may have a substituent, and phosphorus atoms P in the formula may be bonded to each other through R 1 , R 2 , R 3 , or R 4 .]

7 . The polishing liquid according to claim 6 , wherein at least one selected from the group consisting of R 1 , R 2 , R 3 , and R 4 in the general formula (I) is a hydrocarbon group substituted with at least one selected from the group consisting of a carboxyl group, a hydroxyl group, an alkoxy group, a halogeno group, an ether group, an ester group, an aldehyde group, a carbonyl group, a nitro group, a silyl group, a cyano group, an amino group, an alkylamino group, a dialkylamino group, a homocyclic group, and a heterocyclic group.

8 . The polishing liquid according to claim 6 , wherein two or more of R 1 , R 2 , R 3 , and R 4 in the general formula (I) are an unsubstituted hydrocarbon group.

9 . The polishing liquid according to claim 6 , wherein R 1 , R 2 , R 3 , and R 4 in the general formula (I) are an aryl group.

10 . The polishing liquid according to claim 1 , wherein a content of a quaternary phosphonium salt having the quaternary phosphonium cation is 0.001 to 1% by mass.

11 . The polishing liquid according to claim 1 , wherein a pH is less than 8.0.

12 . (canceled)

13 . A polishing liquid set comprising:

constituent components of the polishing liquid according to claim 1 stored while being divided into a plurality of liquids, a first liquid containing the abrasive grains, a second liquid containing the quaternary phosphonium cation.

14 . A polishing method comprising a step of polishing a surface to be polished by using the polishing liquid according to claim 1 .

15 . The polishing method according to claim 14 , wherein the surface to be polished contains polysilicon.

16 . The polishing liquid according to claim 9 , wherein a content of the abrasive grains is 0.5% by mass or less.

17 . The polishing liquid according to claim 11 , wherein a content of the abrasive grains is 0.5% by mass or less.

18 . The polishing liquid according to claim 3 , wherein the hydrocarbon group contains a butyl group.

19 . The polishing liquid according to claim 3 , wherein the hydrocarbon group contains a phenyl group.

20 . The polishing liquid according to claim 3 , wherein the quaternary phosphonium cation contains a phosphonium cation represented by general formula (I) below.

[In the formula, R 1 , R 2 , R 3 , and R 4 each independently represent a hydrogen atom or a hydrocarbon group which may have a substituent, at least one of R 1 , R 2 , R 3 , and R 4 is a hydrocarbon group having two or more carbon atoms which may have a substituent, and phosphorus atoms P in the formula may be bonded to each other through R 1 , R 2 , R 3 , or R 4 .]

21 . The polishing liquid according to claim 20 , wherein at least one selected from the group consisting of R 1 , R 2 , R 3 , and R 4 in the general formula (I) is a hydrocarbon group substituted with at least one selected from the group consisting of a carboxyl group, a hydroxyl group, an alkoxy group, a halogeno group, an ether group, an ester group, an aldehyde group, a carbonyl group, a nitro group, a silyl group, a cyano group, an amino group, an alkylamino group, a dialkylamino group, a homocyclic group, and a heterocyclic group.

22 . The polishing liquid according to claim 20 , wherein two or more of R 1 , R 2 , R 3 , and R 4 in the general formula (I) are an unsubstituted hydrocarbon group.

23 . The polishing liquid according to claim 20 , wherein R 1 , R 2 , R 3 , and R 4 in the general formula (I) are an aryl group.

24 . The polishing liquid according to claim 3 , wherein a content of a quaternary phosphonium salt having the quaternary phosphonium cation is 0.001 to 1% by mass.

25 . The polishing liquid according to claim 3 , wherein a pH is less than 8.0.

26 . A polishing liquid set comprising:

constituent components of the polishing liquid according to claim 3 stored while being divided into a plurality of liquids, a first liquid containing the abrasive grains, a second liquid containing the quaternary phosphonium cation.

27 . A polishing method comprising a step of polishing a surface to be polished by using the polishing liquid according to claim 3 .

28 . The polishing method according to claim 27 , wherein the surface to be polished contains polysilicon.

29 . The polishing liquid according to claim 23 , wherein a content of the abrasive grains is 0.5% by mass or less.

30 . The polishing liquid according to claim 25 , wherein a content of the abrasive grains is 0.5% by mass or less.

Assignments (4)
CHANGE OF ADDRESS Recorded Feb 9, 2024
From: RESONAC CORPORATION
To: RESONAC CORPORATION
Reel/Frame 066547/0677 →
CHANGE OF NAME Recorded Mar 3, 2023
From: SHOWA DENKO MATERIALS CO., LTD.
To: RESONAC CORPORATION
Reel/Frame 062946/0125 →
CHANGE OF NAME Recorded Mar 2, 2023
From: HITACHI CHEMICAL COMPANY, LTD.
To: SHOWA DENKO MATERIALS CO., LTD.
Reel/Frame 062917/0865 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Aug 17, 2020
From: ARAKAWA, KEITA; IIKURA, DAISUKE
To: HITACHI CHEMICAL COMPANY, LTD.
Reel/Frame 053508/0295 →