Semiconductor device and fabrication method of semiconductor device
A semiconductor device having high on-state current and high reliability is provided. The semiconductor device includes, a first insulator; a first oxide over the first insulator; a second oxide over the first oxide; a first conductor and a second conductor over the second oxide; a third oxide over the second oxide; a second insulator over the third oxide; a third conductor located over the second insulator and overlapping with the third oxide; a third insulator in contact with a top surface of the first insulator, a side surface of the first oxide, a side surface of the second oxide, a side surface of the first conductor, a top surface of the first conductor, a side surface of the second conductor, and a top surface of the second conductor; a fourth insulator over the third insulator; a fifth insulator over the fourth insulator; and a sixth insulator over the third conductor, the second insulator, the third oxide and the fifth insulator. The sixth insulator is in contact with a top surface of each of the third conductor, the second insulator, the third oxide, and the fifth insulator.
1. A semiconductor device comprising:
a first insulator;
a first oxide over the first insulator;
a second oxide over the first oxide;
a first conductor and a second conductor over the second oxide;
a third oxide over the second oxide;
a second insulator over the third oxide;
a third conductor located over the second insulator and overlapping with the third oxide;
a third insulator in contact with a top surface of the first insulator, a side surface of the first oxide, a side surface of the second oxide, a side surface of the first conductor, a top surface of the first conductor, a side surface of the second conductor, and a top surface of the second conductor;
a fourth insulator over the third insulator;
a fifth insulator over the fourth insulator; and
a sixth insulator over the third conductor, the second insulator, the third oxide and the fifth insulator,
wherein the sixth insulator is in contact with a top surface of each of the third conductor, the second insulator, the third oxide, and the fifth insulator.
2. The semiconductor device according to claim 1 ,
wherein the third insulator and the fourth insulator are each less likely to transmit one or both of oxygen and hydrogen than the first insulator.
3. The semiconductor device according to claim 1 ,
wherein the third insulator, the fourth insulator, and the sixth insulator are each less likely to transmit one or both of oxygen and hydrogen than the second insulator.
4. The semiconductor device according to claim 1 ,
wherein the fourth insulator and the sixth insulator are each an oxide comprising one or both of aluminum and hafnium.
5. The semiconductor device according to claim 1 ,
wherein the fourth insulator and the sixth insulator are each aluminum oxide.
6. The semiconductor device according to claim 1 ,
wherein the third insulator comprises silicon and nitrogen.
7. The semiconductor device according to claim 1 ,
wherein the first oxide to the third oxide comprise In, an element M (M is Al, Ga, Y, or Sn), and Zn.