Mask blank, phase shift mask, and method for manufacturing semiconductor device

1. A mask blank comprising:

a transparent substrate; and

a phase shift film formed on the transparent substrate,

wherein the phase shift film at least contains a nitrogen-containing layer and an oxygen-containing layer;

wherein the oxygen-containing layer contains silicon and oxygen;

wherein the nitrogen-containing layer contains silicon and nitrogen; and

wherein, when the nitrogen-containing layer is subjected to X-ray photoelectron spectroscopy to obtain a maximum peak PSi_f of photoelectron intensity of an Si2p narrow spectrum in the nitrogen-containing layer and the transparent substrate is subjected to X-ray photoelectron spectroscopy to obtain a maximum peak PSi_s of photoelectron intensity of an Si2p narrow spectrum in the transparent substrate, a numerical value (PSi_f)/(PSi_s) is 1.09 or less where the numerical value is obtained by dividing the maximum peak PSi_f in the nitrogen-containing layer by the maximum peak PSi_s in the transparent substrate.

2. The mask blank according to claim 1 , wherein the nitrogen-containing layer has a nitrogen content of 50 atomic % or more.

3. The mask blank according to claim 1 , wherein the oxygen-containing layer has a total content of nitrogen and oxygen of 50 atomic % or more.

4. The mask blank according to claim 1 , wherein the oxygen-containing layer has an oxygen content of 15 atomic % or more.

5. The mask blank according to claim 1 , wherein the maximum peak of photoelectron intensity in the Si2p narrow spectrum is the maximum peak at a bond energy within a range of 96 [eV] or more and 106 [eV] or less.

6. The mask blank according to claim 1 , wherein the X-ray photoelectron spectroscopy to which the nitrogen-containing layer is subjected is carried out using AlKα X-rays.

7. The mask blank according to claim 1 , wherein a ratio of the proportion of Si3N 4 bonds that exist in an area of the nitrogen-containing layer to a total proportion of Si 3 N 4 bonds, Si a N b bonds (where b/[a+b]<4/7), Si—O bonds, and Si—ON bonds that exist in the area of the nitrogen-containing layer is 0.88 or more.

8. The mask blank according to claim 1 , wherein a transmittance of the phase shift film with respect to exposure light of an ArF excimer laser is 10% or more; and

the phase shift film is configured to transmit the exposure light so that transmitted light has a phase difference of 150 degrees or more and 200 degrees or less with respect to the exposure light transmitted through air for a same distance as a thickness of the phase shift film.

9. The mask blank according to claim 1 , comprising a light shielding film formed on the phase shift film.

10. A phase shift mask comprising:

a transparent substrate; and

a phase shift film with a transfer pattern formed on the transparent substrate,

wherein the phase shift film at least includes a nitrogen-containing layer and an oxygen-containing layer;

wherein the oxygen-containing layer contains silicon and oxygen;

wherein the nitrogen-containing layer contains silicon and nitrogen; and

wherein, when the nitrogen-containing layer is subjected to X-ray photoelectron spectroscopy to obtain a maximum peak PSi_f of photoelectron intensity of an Si2p narrow spectrum in the nitrogen-containing layer and the transparent substrate is subjected to X-ray photoelectron spectroscopy to obtain a maximum peak PSi_s of photoelectron intensity of an Si2p narrow spectrum in the transparent substrate, a numerical value (PSi_f)/(PSi_s) is 1.09 or less, where the numerical value is obtained by dividing the maximum peak PSi_f in the nitrogen-containing layer by the maximum peak PSi_s in the transparent substrate.

11. The phase shift mask according to claim 10 , wherein the nitrogen-containing layer has a nitrogen content of 50 atomic % or more.

12. The phase shift mask according to claim 10 , wherein the oxygen-containing layer has a total content of nitrogen and oxygen of 50 atomic % or more.

13. The phase shift mask according to claim 10 , wherein the oxygen-containing layer has an oxygen content of 15 atomic % or more.

14. The phase shift mask according to claim 10 , wherein the maximum peak of photoelectron intensity in the Si2p narrow spectrum is the maximum peak at a bond energy within a range of 96 [eV] or more and 106 [eV] or less.

15. The phase shift mask according to claim 10 , wherein the X-ray photoelectron spectroscopy to which the nitrogen-containing layer is subjected is carried out using AlKα X-rays.

16. The phase shift mask according to claim 10 , wherein a ratio of the proportion of Si 3 N 4 bonds that exist in an area of the nitrogen-containing layer to a total proportion of Si 3 N 4 bonds, Si a N b bonds (where b/[a+b]<4/7), Si—O bonds, and Si—ON bonds that exist in the area of the nitrogen-containing layer is 0.88 or more.

17. The phase shift mask according to claim 10 , wherein a transmittance of the phase shift film with respect to exposure light of an ArF excimer laser is 10% or more; and

the phase shift film is configured to transmit the exposure light so that transmitted light has a phase difference of 150 degrees or more and 200 degrees or less with respect to the exposure light transmitted through air for a same distance as a thickness of the phase shift film.

18. The phase shift mask according to claim 10 , comprising a light shielding film formed on the phase shift film and provided with a light shielding pattern.

19. A method of manufacturing a semiconductor device, comprising using the phase shift mask according to claim 10 to exposure-transfer a transfer pattern to a resist film on a semiconductor substrate.