Semiconductor device and method of producing the same
Provided is a semiconductor device having excellent heat dissipation capacity and electromagnetic wave suppression effect. A semiconductor device 1 includes a semiconductor device 30 ; a tubular conductive shield can 20 provided to surround a side surface 30 a of the semiconductor device 30 ; a conductive cooling member 40 ; and a conductive thermally conductive sheet 10 formed between the semiconductor device 30 and the cooling member 40 . The conductive shield can 20 and the cooling member 40 are electrically connected through the conductive thermally conductive sheet 10 therebetween.
1. A semiconductor device comprising:
a semiconductor element provided on a substrate;
a tubular conductive shield can provided to surround a side surface of the semiconductor element, the conductive shield can being connected to a ground;
a conductive cooling member provided over the semiconductor element and the conductive shield can; and
a thermally conductive sheet formed between the semiconductor element and the cooling member,
wherein the conductive shield can and the cooling member are electrically connected through the thermally conductive sheet therebetween, and
an upper end of the conductive shield can bites into the thermally conductive sheet.
2. The semiconductor device according to claim 1 , wherein a spacing between parts of the conductive shield can facing each other with the semiconductor element therebetween is less than or equal to 1/10 of a wavelength at a maximum frequency of the semiconductor element.
3. The semiconductor device according to claim 1 , wherein a resistivity of the thermally conductive sheet is 0.15 Ω·m or less.
4. The semiconductor device according to claim 1 , wherein a resistivity of the thermally conductive sheet is 1.5×10 −7 Ω·m or more.
5. The semiconductor device according to claim 1 , wherein the thermally conductive sheet has magnetic properties.
6. The semiconductor device according to claim 1 , wherein the thermally conductive sheet has tackiness or adhesiveness at a surface thereof.
7. The semiconductor device according to claim 1 , wherein the thermally conductive sheet has flexibility.
8. The semiconductor device according to claim 1 , wherein the thermally conductive sheet contains a cured resin.
9. The semiconductor device according to claim 1 , wherein the thermally conductive sheet contains a conductive filler.
10. The semiconductor device according to claim 9 , wherein the conductive filler is carbon fiber.
11. A method of producing the semiconductor device according to claim 1 , the method comprising:
a step of fixing by pressure a thermally conductive sheet to an upper end of a tubular conductive shield can provided to surround a side surface of a semiconductor element, thereby joining the conductive shield can and the thermally conductive sheet.