IP Library Granted Patent US 11,572,490
Granted Patent B2
US 11,572,490 · App. 16/981,560 · Granted Feb 7, 2023

Polishing liquid, polishing liquid set, and polishing method

Inventor: Tomohiro Iwano (Tokyo, JP)
Assignee: SHOWA DENKO MATERIALS CO., LTD.
C09G1/02B24B37/044C09K3/1409H01L21/31053
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Quick Facts
Patent No.
US 11,572,490
App. No.
16/981,560
Granted
Feb 7, 2023
Kind
B2
Abstract

A polishing liquid containing abrasive grains, a hydroxy acid, a polyol, and a liquid medium, in which a zeta potential of the abrasive grains is positive, and the hydroxy acid has one carboxyl group and one to three hydroxyl groups.

Claims (29)

1. A polishing liquid comprising: abrasive grains; a hydroxy acid component; a polyol component; and a liquid medium, wherein

a zeta potential of the abrasive grains is positive, the abrasive grains comprise ceria, an average secondary particle diameter of the abrasive grains is 200 nm or more,

the hydroxy acid component comprises at least one selected from the group consisting of 2,2-bis(hydroxymethyl)propionic acid, 2,2-bis(hydroxymethyl)butyric acid, N,N-bis(2-hydroxyethyl)glycine, and N-[2-hydroxy-1,1-bis(hydroxymethyl)ethyl]glycine, and

the polyol component comprises at least one selected from the group consisting of polyglycerin, polyvinyl alcohol, polyoxyalkylene sorbitol ether, a polyoxyalkylene condensate of ethylenediamine, 2,2-bis(4-polyoxyalkylene-oxyphenyl)propane, polyoxyalkylene glyceryl ether, polyoxyalkylene diglyceryl ether, polyoxyalkylene trimethylolpropane ether, polyoxyalkylene pentaerythritol ether, and polyoxyalkylene methyl glucoside.

2. The polishing liquid according to claim 1 , wherein the hydroxy acid component further comprises a compound having one carboxyl group and one hydroxyl group.

3. The polishing liquid according to claim 1 , wherein a content of the hydroxy acid component is 0.01 to 1.0% by mass.

4. The polishing liquid according to claim 1 , wherein a content of the polyol component is 0.05 to 5.0% by mass.

5. The polishing liquid according to claim 1 , wherein the polishing liquid is used for polishing a surface to be polished containing silicon oxide.

6. A polishing liquid set comprising:

constituent components of the polishing liquid according to claim 1 , separately stored as a first liquid and a second liquid, wherein

the first liquid comprises the abrasive grains and the liquid medium, and

the second liquid comprises the hydroxy acid component, the polyol component, and the liquid medium.

7. A polishing method comprising a step of polishing a surface to be polished by using a polishing liquid obtained by mixing the first liquid and the second liquid of the polishing liquid set according to claim 6 .

8. A polishing method for a base substrate having an insulating material and silicon nitride, the method comprising:

a step of selectively polishing the insulating material with respect to the silicon nitride by using a polishing liquid obtained by mixing the first liquid and the second liquid of the polishing liquid set according to claim 6 .

9. A polishing method for a base substrate having an insulating material and polysilicon, the method comprising:

a step of selectively polishing the insulating material with respect to the polysilicon by using a polishing liquid obtained by mixing the first liquid and the second liquid of the polishing liquid set according to claim 6 .

10. A polishing method comprising a step of polishing a surface to be polished by using the polishing liquid according to claim 1 .

11. A polishing method for a base substrate having an insulating material and silicon nitride, the method comprising:

a step of selectively polishing the insulating material with respect to the silicon nitride by using the polishing liquid according to claim 1 .

12. A polishing method for a base substrate having an insulating material and polysilicon, the method comprising:

a step of selectively polishing the insulating material with respect to the polysilicon by using the polishing liquid according to claim 1 .

13. The polishing liquid according to claim 1 , wherein a content of the abrasive grains is 0.2% by mass or less.

14. The polishing liquid according to claim 1 , wherein the polyol component comprises at least one selected from the group consisting of polyoxyalkylene sorbitol ether, polyoxyalkylene glyceryl ether, polyoxyalkylene trimethylolpropane ether, and polyoxyalkylene pentaerythritol ether.

15. The polishing liquid according to claim 1 , wherein a content of the polyol component is 0.05% by mass or more.

16. The polishing liquid according to claim 1 , wherein the polyol component comprises polyoxyalkylene trimethylolpropane ether.

17. The polishing liquid according to claim 1 , the polyol component comprises at least one selected from the group consisting of polyoxyalkylene sorbitol ether, a polyoxyalkylene condensate of ethylenediamine, 2,2-bis(4-polyoxyalkylene-oxyphenyl)propane, polyoxyalkylene glyceryl ether, polyoxyalkylene diglyceryl ether, polyoxyalkylene trimethylolpropane ether, polyoxyalkylene pentaerythritol ether, and polyoxyalkylene methyl glucoside.

18. The polishing liquid according to claim 17 , wherein the polyol component comprises polyoxyalkylene trimethylolpropane ether.

19. The polishing liquid according to claim 1 , wherein the abrasive grains do not comprise silica.

Assignments (5)
CHANGE OF ADDRESS Recorded Feb 14, 2024
From: RESONAC CORPORATION
To: RESONAC CORPORATION
Reel/Frame 066599/0037 →
CHANGE OF NAME Recorded Mar 3, 2023
From: SHOWA DENKO MATERIALS CO., LTD.
To: RESONAC CORPORATION
Reel/Frame 062946/0125 →
CHANGE OF NAME Recorded Mar 2, 2023
From: HITACHI CHEMICAL COMPANY, LTD.
To: SHOWA DENKO MATERIALS CO., LTD.
Reel/Frame 062917/0865 →
CHANGE OF NAME Recorded Oct 25, 2022
From: HITACHI CHEMICAL CO., LTD.
To: SHOWA DENKO MATERIALS CO., LTD.
Reel/Frame 061770/0144 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 16, 2020
From: IWANO, TOMOHIRO
To: HITACHI CHEMICAL COMPANY, LTD.
Reel/Frame 053792/0243 →
Priority Claims (2)
WO PCT/JP2018/011464 · Mar 22, 2018 · international
WO PCT/JP2018/028105 · Jul 26, 2018 · international
Continuity (1)
Related Publication 20210017422A1 · Jan 21, 2021