Semiconductor nanocrystal particle and production methods thereof

1. A semiconductor nanocrystal particle represented by Chemical Formula 1 and having a full width at half maximum of an emission wavelength spectrum of less than or equal to about 30 nanometers:

A x A′ (3+α−x) D (2−β) E (9+γ)   Chemical Formula 1

wherein, in Chemical Formula 1,

A is a first metal comprising Rb, Cs, or a combination thereof,

A′ is an organic material derived from an ammonium salt, an organic material derived from an organic ligand, or an organic material comprising a combination thereof,

D is a second metal comprising Sb, Bi, or a combination thereof

E is Cl, Br, I, or a combination thereof,

1<x≤3,

−1<α<1,

3+α−x>0,

−1<β<1, and

−1<γ<1.

2. The semiconductor nanocrystal particle of claim 1 , wherein the first metal further comprises Na, K, or a combination thereof.

3. The semiconductor nanocrystal particle of claim 1 , wherein the second metal further comprises Cu, Sn, In, Ga, Zn, Ag, Au, Pd, or a combination thereof.

4. The semiconductor nanocrystal particle of claim 1 , wherein the semiconductor nanocrystal particle has a full width at half maximum of a maximum emission peak of less than or equal to about 25 nanometers.

5. The semiconductor nanocrystal particle of claim 1 , wherein the semiconductor nanocrystal particle has a maximum emission peak between about 440 nanometers and about 560 nanometers.

6. The semiconductor nanocrystal particle of claim 5 , wherein the maximum emission peak is between about 440 nanometers to about 490 nanometers or about 500 nanometers to about 560 nanometers.

7. The semiconductor nanocrystal particle of claim 1 , wherein the organic material derived from an ammonium salt comprises

NR 1 4 + , wherein R 1 is independently hydrogen, a hydroxyl group, a substituted or unsubstituted C1 to C24 linear or branched alkyl group, or a substituted or unsubstituted C7 to C30 arylalkyl group),

[CH(NH 2 ) 2 ] + ,

or a combination thereof.

8. The semiconductor nanocrystal particle of claim 7 , wherein the organic material derived from an ammonium salt comprises formamidinium, butylammonium, diisopropylammonium, methylammonium, hydroxylammonium, phenylethylammonium, or a combination thereof.

9. The semiconductor nanocrystal particle of claim 1 , wherein the semiconductor nanocrystal particle has a perovskite crystal structure.

10. The semiconductor nanocrystal particle of claim 1 , wherein the semiconductor nanocrystal particle has a shape of a nanoplatelet.

11. The semiconductor nanocrystal particle of claim 1 , wherein

the semiconductor nanocrystal particle emits green light having a maximum emission peak between about 500 nanometers and about 560 nanometers, and

the green light has a color coordinate Cx value of less than about 0.2 and a Cy value of greater than about 0.6.

12. The semiconductor nanocrystal particle of claim 1 , wherein a molar amount of D of Chemical Formula 1, measured by an area of an X-ray photoelectron analysis spectrum on a surface of the semiconductor nanocrystal particle, is greater than a molar amount of each of the A, A′, and E of Chemical Formula 1, measured by the area of the X-ray photoelectron analysis spectrum on the surface of the semiconductor nanocrystal particle.

13. The semiconductor nanocrystal particle of claim 12 , wherein a mole ratio of A to A′ of Chemical Formula 1, measured by an area ratio of the X-ray photoelectron analysis spectrum on the surface of the semiconductor nanocrystal particle, is about 1:1 to about 4:1.

14. A method of producing a semiconductor nanocrystal particle of claim 1 , comprising

providing an antisolvent comprising an organic ligand,

injecting a first metal precursor, a second metal precursor, and an organic material precursor into the antisolvent comprising the organic ligand to form a mixture, and

heating the mixture at a temperature of less than about 70° C. to produce the semiconductor nanocrystal particle,

wherein the first metal precursor, the second metal precursor, the organic material precursor, or a combination thereof comprise Cl, Br, I, or a combination thereof.

15. The method of claim 14 , wherein the organic ligand comprises R 2 COOH, R 2 NH 2 , R 2 2 NH, R 2 3 N, R 2 SH, R 2 3 PO, R 2 3 P, R 2 OH, R 2 COOR 3 , R 2 PO(OH) 2 , R 2 2 POOH, and R 2 COOCOR 3 , wherein, R 2 and R 3 are independently a substituted or unsubstituted C1 to C24 aliphatic hydrocarbon group or a substituted or unsubstituted C5 to C24 aromatic hydrocarbon group, or a combination thereof.

16. The method of claim 15 , wherein the organic ligand comprises oleic acid, oleylamine, or a combination thereof.

17. The method of claim 14 , wherein the antisolvent comprises a nitrogen-containing heterocyclic compound, a C6 or greater aromatic hydrocarbon group, an aromatic ether, or a combination thereof.

18. The method of claim 14 , wherein the first metal precursor comprises a powder of the first metal, an alkylated compound of the first metal, an alkoxide of the first metal, a carboxylate of the first metal, a nitrate of the first metal, a perchlorate of the first metal, a sulfate of the first metal, an acetylacetonate of the first metal, a halide of the first metal, a cyanide of the first metal, a hydroxide of the first metal, an oxide of the first metal, a peroxide of the first metal, or a combination thereof.

19. The method of claim 14 , wherein the second metal precursor comprises a powder of the second metal, an alkylated compound of the second metal, an alkoxide of the second metal, a carboxylate of the second metal, a nitrate of the second metal, a perchlorate of the second metal, a sulfate of the second metal, an acetylacetonate of the second metal, a halide of the second metal, a cyanide of the second metal, a hydroxide of the second metal, an oxide of the second metal, a peroxide of the second metal, or a combination thereof.

20. The method of claim 14 , wherein the organic material precursor comprises an ammonium salt.