Film forming method and film forming apparatus
A method of forming a metal-containing nitride film containing silicon includes: supplying a metal-containing gas into a processing container in which a substrate is accommodated; supplying a silicon-containing gas into the processing container; and supplying a nitrogen-containing gas into the processing container, wherein a series of processes, in which the supplying the metal-containing gas and the supplying the silicon-containing gas are executed n times in this order (where n is an integer of one or more) and then the supplying the nitrogen-containing gas is executed, is repeated m times in this order (where m is an integer of one or more).
1. A method of forming a metal-containing nitride film containing silicon, the method comprising:
adjusting a temperature of a substrate to a predetermined temperature of 400 degrees C. to 530 degrees C.;
forming a TiSi layer on the substrate by reacting chlorine and silicon to produce SiCl 4 and removing the chlorine and the silicon from the substrate by repeating a cycle, the cycle including: alternately supplying a TiCl 4 gas and a silicon-containing gas into a processing container in which the substrate is accommodated; and
forming a TiSiN film on the substrate by nitriding the TiSi layer on the substrate by supplying a nitrogen-containing gas to the TiSi layer on the substrate,
wherein a series of processes, in which the cycle is repeated n times and then the supplying the nitrogen-containing gas is executed, is repeated m times in this order (where m is an integer of one or more), and
wherein in the series of processes, if the temperature of the substrate is adjusted to a temperature range of 400 degrees C. or more and less than 430 degrees C., n is set to an integer of 1 or more, and if the temperature of the substrate is adjusted to a temperature range of 430 degrees C. or more and 530 degrees C. or less, n is set to an integer of two or more.
2. The method of claim 1 , wherein an execution time of the supplying the TiCl 4 gas is equal to or approximate to an execution time of the supplying the silicon-containing gas.
3. The method of claim 2 , wherein the silicon-containing gas is at least a gas selected from a group consisting of silane (SiH 4 ), disilane (Si 2 H 6 ), chlorosilane (ClH 3 Si), and dichlorosilane (DCS: SiH 2 Cl 2 ).
4. The method of claim 3 , wherein the nitrogen-containing gas is at least a gas selected from a group consisting of ammonia (NH 3 ), hydrazine (N 2 H 4 ), and monomethylhydrazine (MMH).
5. The method of claim 4 , further comprising purging the processing container between the supplying the TiCl 4 gas and the supplying the silicon-containing gas, between the supplying the silicon-containing gas and the supplying the nitrogen-containing gas, and between the supplying the nitrogen-containing gas and the supplying the TiCl 4 gas.
6. The method of claim 5 , wherein the metal-containing nitride film containing silicon is a TiSiN film.
7. The method of claim 1 , wherein the silicon-containing gas is at least a gas selected from a group consisting of silane (SiH 4 ), disilane (Si 2 H 6 ), chlorosilane (ClH 3 Si), and dichlorosilane (DCS: SiH 2 Cl 2 ).
8. The method of claim 1 , wherein the nitrogen-containing gas is at least a gas selected from a group consisting of ammonia (NH 3 ), hydrazine (N 2 H 4 ), and monomethylhydrazine (MMH).
9. The method of claim 1 , further comprising purging the processing container between the supplying the TiCl 4 gas and the supplying the silicon-containing gas, between the supplying the silicon-containing gas and the supplying the nitrogen-containing gas, and between the supplying the nitrogen-containing gas and the supplying the TiCl 4 gas.
10. The method of claim 1 , wherein the metal-containing nitride film containing silicon is a TiSiN film.